Abstract:
A heat-dissipating device and a housing thereof. The housing includes a passage for guiding an air stream flowing from an opening to another opening, wherein an inner wall of the passage at at least one of the opening sides extends radially outwards with a rotational axis of the heat-dissipating device or the passage so as to enlarge intake or discharge area for the air streams. Accordingly, the intake airflow rate may be greatly increased and the heat-dissipating efficiency of the heat-dissipating device may be greatly enhanced without changing assembling conditions with other elements.
Abstract:
A cooling fan with high heat-dissipating performance includes a plurality of blades; and a frame for receiving the blades therein, wherein the frame has a reduced height for exposing the blades to outside of the frame so as to allow air to enter into the frame via a top portion and a peripheral portion of the blades to improve air introduction and heat dissipating efficiency of the cooling fan. A cover may be mounted to a top surface of the frame, and formed with a plurality of openings for allowing air to enter into the frame through the openings; such an arrangement cam effectively enhance air intake and working efficiency of the cooling fan.
Abstract:
A centrifugal fan, comprising a frame and a first guide portion. The frame comprises a bottom portion and a curved wall connected thereto. The curved wall comprises an airflow inlet. The first guide portion disposed along the curved wall at the bottom portion comprises a beginning area, a middle area, and an ending area. The middle area connects the beginning and the ending areas, and the beginning area extends from the airflow inlet. The beginning area has a width less than that of the ending area, and the beginning area has a height greater than that of the ending area.
Abstract:
An axial flow fan. The axial flow fan includes an impeller, an annular structure, and a plurality of connecting portions. The impeller has a plurality of blades, arranged radially. Each blade has an outer periphery. The outer periphery has a top portion. The annular structure is attached to the top portion of the outer periphery of each blade. Each connecting portion respectively connects each blade to the annular structure.
Abstract:
A triboelectric generator can include respective contact members including a first contact member and second contact member. The respective contact members can be movable with respect to each other such that the respective contact members separate from each other in a first configuration and contact each other in a second configuration. The first contact member can include a first conductive layer and a contact layer. The second contact member can be spaced apart from the first contact member in the first configuration and can include an insulating contact layer and a second conductive layer. The insulating contact layer can be configured to come into contact with the contact layer of the first contact member and the transition of the respective contact members from the first configuration to the second configuration can create triboelectric charges. In some examples, the first contact member can include a non-contact insulating layer.
Abstract:
Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.