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公开(公告)号:US20230230208A1
公开(公告)日:2023-07-20
申请号:US18154621
申请日:2023-01-13
Applicant: ASML Netherlands B.V.
Inventor: Hairong LEI , Wei FANG
IPC: G06T5/00
CPC classification number: G06T5/002 , G06T2207/20081 , G06T2207/20084 , G06T2207/10061
Abstract: Described herein is a method for training a denoising model. The method includes obtaining a first set of simulated images based on design patterns. The simulated images may be clean and can be added with noise to generate noisy simulated images. The simulated clean and noisy images are used as training data to generate a denoising model.
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公开(公告)号:US20220254599A1
公开(公告)日:2022-08-11
申请号:US17630455
申请日:2020-07-18
Applicant: ASML Netherlands B.V.
Inventor: Wei FANG , Weiming REN , Zhong-wei CHEN
IPC: H01J37/28 , H01J37/26 , H01J37/147 , H01J37/04
Abstract: Inspection systems and methods are disclosed. An inspection system may include a first energy source configured to provide a first landing energy beam and a second energy source configured to provide a second landing energy beam. The inspection system may also include a beam controller configured to selectively deliver one of the first and second landing energy beams towards a same field of view, and to switch between delivery of the first and second landing energy beams according to a mode of operation of the inspection system.
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公开(公告)号:US20220068592A1
公开(公告)日:2022-03-03
申请号:US17397863
申请日:2021-08-09
Applicant: ASML Netherlands B.V.
IPC: H01J37/22 , G01N21/95 , G01N21/956 , H01J37/14 , H01J37/147 , H01J37/244 , H01J37/28 , H01J37/153
Abstract: A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.
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公开(公告)号:US20220068590A1
公开(公告)日:2022-03-03
申请号:US17418741
申请日:2019-12-19
Applicant: ASML Netherlands B.V.
Inventor: Ying LUO , Zhonghua DONG , Xuehui YIN , Long DI , Nianpei DENG , Wei FANG , Lingling PU , Ruochong FEI , Bohang ZHU , Yu LIU
IPC: H01J37/147 , H01J37/20 , H01J37/21 , H01J37/28
Abstract: Systems and methods for irradiating a sample with a charged-particle beam are disclosed. The charged-particle beam system may comprise a stage configured to hold a sample and is movable in at least one of X-Y-Z axes. The charged-particle beam system may further comprise a position sensing system to determine a lateral and vertical displacement of the stage, and a beam deflection controller configured to apply a first signal to deflect a primary charged-particle beam incident on the sample to at least partly compensate for the lateral displacement, and to apply a second signal to adjust a focus of the deflected charged-particle beam incident on the sample to at least partly compensate for the vertical displacement of the stage. The first and second signals may comprise an electrical signal having a high bandwidth in a range of 10 kHz to 50 kHz, and 50 kHz to 200 kHz, respectively.
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公开(公告)号:US20200020092A1
公开(公告)日:2020-01-16
申请号:US16508167
申请日:2019-07-10
Applicant: ASML Netherlands B.V.
Inventor: Wei FANG , Zhaohui GUO , Ruoyu ZHU , Chuan LI
Abstract: A pattern grouping method may include receiving an image of a first pattern, generating a first fixed-dimensional feature vector using trained model parameters applying to the received image, and assigning the first fixed-dimensional feature vector a first bucket ID. The method may further include creating a new bucket ID for the first fixed-dimensional feature vector in response to determining that the first pattern does not belong to one of a plurality of buckets corresponding to defect patterns, or mapping the first fixed-dimensional feature vector to the first bucket ID in response to determining that the first pattern belongs to one of a plurality of buckets corresponding to defect patterns.
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公开(公告)号:US20240005457A1
公开(公告)日:2024-01-04
申请号:US18031601
申请日:2021-09-27
Applicant: ASML Netherlands B.V.
Inventor: Hairong LEI , Wei FANG
CPC classification number: G06T5/003 , G06T7/13 , G06T5/002 , G06T2207/20192 , G06T2207/20084 , G06T2207/30148 , G06T2207/10061 , G06T2207/20081
Abstract: Described herein is a method, and system for training a deblurring model and deblurring an image (e.g., SEM image) of a patterned substrate using the deblurring model and depth data associated with multiple layers of the patterned substrate. The method includes obtaining, via a simulator using a target pattern as input, a simulated image of the substrate, the target pattern comprising a first target feature to be formed on a first layer, and a second target feature to be formed on a second layer located below the first layer; determining, based on depth data associated with multiple layers of the substrate, edge range data for features of the substrate; and adjusting, using the simulated image and the edge range data associated with the target pattern as training data, parameters of a base model to generate the deblurring model to a deblur image of a captured image.
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公开(公告)号:US20220253999A1
公开(公告)日:2022-08-11
申请号:US17728691
申请日:2022-04-25
Applicant: ASML Netherlands B.V.
Inventor: Wei FANG
IPC: G06T7/00 , G06T7/30 , G01N23/2251
Abstract: An image is obtained by using a charged particle beam, and a design layout information is generated to select patterns of interest. Grey levels among patterns can be compared with each other to identify abnormal, or grey levels within one pattern can be compared to a determined threshold grey level to identify abnormal.
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公开(公告)号:US20220245840A1
公开(公告)日:2022-08-04
申请号:US17659467
申请日:2022-04-15
Applicant: ASML Netherlands B.V.
Inventor: Wei FANG , Lingling PU
Abstract: A method for aligning a wafer image with a reference image, comprising: searching for a targeted reference position on the wafer image for aligning the wafer image with the reference image; and in response to a determination that the targeted reference position does not exist: defining a current lock position and an area that encloses the current lock position on the wafer image; computing an alignment score of the current lock position; comparing the alignment score of the current lock position with stored alignment scores of positions previously selected in relation to aligning the wafer image with the reference image; and aligning the wafer image with the reference image based on the comparison.
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公开(公告)号:US20220245780A1
公开(公告)日:2022-08-04
申请号:US17671522
申请日:2022-02-14
Applicant: ASML Netherlands B.V.
Inventor: Wei FANG , Zhao-Li ZHANG , Jack JAU
Abstract: An inspection method includes the following steps: identifying a plurality of patterns within an image; and comparing the plurality of patterns with each other for measurement values thereof. The above-mentioned inspection method uses the pattern within the image as a basis for comparison; therefore, measurement values of the plurality of pixels constructing the pattern can be processed with statistical methods and then compared, and the false rate caused by variation of a few pixels is decreased significantly. An inspection system implementing the above-mentioned method is also disclosed.
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公开(公告)号:US20220237759A1
公开(公告)日:2022-07-28
申请号:US17567847
申请日:2022-01-03
Applicant: ASML Netherlands B.V.
Inventor: Lingling PU , Wei FANG , Nan ZHAO , Wentian ZHOU , Teng WANG , Ming XU
Abstract: Systems and methods for optimal electron beam metrology guidance are disclosed. According to certain embodiments, the method may include receiving an acquired image of a sample, determining a set of image parameters based on an analysis of the acquired image, determining a set of model parameters based on the set of image parameters, generating a set of simulated images based on the set of model parameters. The method may further comprise performing measurement of critical dimensions on the set of simulated images and comparing critical dimension measurements with the set of model parameters to provide a set of guidance parameters based on comparison of information from the set of simulated images and the set of model parameters. The method may further comprise receiving auxiliary information associated with target parameters including critical dimension uniformity.
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