SYSTEM AND METHOD FOR BARE WAFER INSPECTION

    公开(公告)号:US20220068592A1

    公开(公告)日:2022-03-03

    申请号:US17397863

    申请日:2021-08-09

    Inventor: Wei FANG Joe WANG

    Abstract: A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.

    SYSTEMS AND METHODS FOR FOCUSING CHARGED -PARTICLE BEAMS

    公开(公告)号:US20220068590A1

    公开(公告)日:2022-03-03

    申请号:US17418741

    申请日:2019-12-19

    Abstract: Systems and methods for irradiating a sample with a charged-particle beam are disclosed. The charged-particle beam system may comprise a stage configured to hold a sample and is movable in at least one of X-Y-Z axes. The charged-particle beam system may further comprise a position sensing system to determine a lateral and vertical displacement of the stage, and a beam deflection controller configured to apply a first signal to deflect a primary charged-particle beam incident on the sample to at least partly compensate for the lateral displacement, and to apply a second signal to adjust a focus of the deflected charged-particle beam incident on the sample to at least partly compensate for the vertical displacement of the stage. The first and second signals may comprise an electrical signal having a high bandwidth in a range of 10 kHz to 50 kHz, and 50 kHz to 200 kHz, respectively.

    PATTERN GROUPING METHOD BASED ON MACHINE LEARNING

    公开(公告)号:US20200020092A1

    公开(公告)日:2020-01-16

    申请号:US16508167

    申请日:2019-07-10

    Abstract: A pattern grouping method may include receiving an image of a first pattern, generating a first fixed-dimensional feature vector using trained model parameters applying to the received image, and assigning the first fixed-dimensional feature vector a first bucket ID. The method may further include creating a new bucket ID for the first fixed-dimensional feature vector in response to determining that the first pattern does not belong to one of a plurality of buckets corresponding to defect patterns, or mapping the first fixed-dimensional feature vector to the first bucket ID in response to determining that the first pattern belongs to one of a plurality of buckets corresponding to defect patterns.

    APPARATUS AND METHODS TO GENERATE DEBLURRING MODEL AND DEBLUR IMAGE

    公开(公告)号:US20240005457A1

    公开(公告)日:2024-01-04

    申请号:US18031601

    申请日:2021-09-27

    Abstract: Described herein is a method, and system for training a deblurring model and deblurring an image (e.g., SEM image) of a patterned substrate using the deblurring model and depth data associated with multiple layers of the patterned substrate. The method includes obtaining, via a simulator using a target pattern as input, a simulated image of the substrate, the target pattern comprising a first target feature to be formed on a first layer, and a second target feature to be formed on a second layer located below the first layer; determining, based on depth data associated with multiple layers of the substrate, edge range data for features of the substrate; and adjusting, using the simulated image and the edge range data associated with the target pattern as training data, parameters of a base model to generate the deblurring model to a deblur image of a captured image.

    EBeam Inspection Method
    27.
    发明申请

    公开(公告)号:US20220253999A1

    公开(公告)日:2022-08-11

    申请号:US17728691

    申请日:2022-04-25

    Inventor: Wei FANG

    Abstract: An image is obtained by using a charged particle beam, and a design layout information is generated to select patterns of interest. Grey levels among patterns can be compared with each other to identify abnormal, or grey levels within one pattern can be compared to a determined threshold grey level to identify abnormal.

    METHOD AND APPARATUS FOR ADAPTIVE ALIGNMENT

    公开(公告)号:US20220245840A1

    公开(公告)日:2022-08-04

    申请号:US17659467

    申请日:2022-04-15

    Abstract: A method for aligning a wafer image with a reference image, comprising: searching for a targeted reference position on the wafer image for aligning the wafer image with the reference image; and in response to a determination that the targeted reference position does not exist: defining a current lock position and an area that encloses the current lock position on the wafer image; computing an alignment score of the current lock position; comparing the alignment score of the current lock position with stored alignment scores of positions previously selected in relation to aligning the wafer image with the reference image; and aligning the wafer image with the reference image based on the comparison.

    INSPECTION METHOD AND SYSTEM
    29.
    发明申请

    公开(公告)号:US20220245780A1

    公开(公告)日:2022-08-04

    申请号:US17671522

    申请日:2022-02-14

    Abstract: An inspection method includes the following steps: identifying a plurality of patterns within an image; and comparing the plurality of patterns with each other for measurement values thereof. The above-mentioned inspection method uses the pattern within the image as a basis for comparison; therefore, measurement values of the plurality of pixels constructing the pattern can be processed with statistical methods and then compared, and the false rate caused by variation of a few pixels is decreased significantly. An inspection system implementing the above-mentioned method is also disclosed.

    SYSTEMS AND METHODS OF OPTIMAL METROLOGY GUIDANCE

    公开(公告)号:US20220237759A1

    公开(公告)日:2022-07-28

    申请号:US17567847

    申请日:2022-01-03

    Abstract: Systems and methods for optimal electron beam metrology guidance are disclosed. According to certain embodiments, the method may include receiving an acquired image of a sample, determining a set of image parameters based on an analysis of the acquired image, determining a set of model parameters based on the set of image parameters, generating a set of simulated images based on the set of model parameters. The method may further comprise performing measurement of critical dimensions on the set of simulated images and comparing critical dimension measurements with the set of model parameters to provide a set of guidance parameters based on comparison of information from the set of simulated images and the set of model parameters. The method may further comprise receiving auxiliary information associated with target parameters including critical dimension uniformity.

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