METHOD, APPARATUS, AND SYSTEM FOR WAFER GROUNDING

    公开(公告)号:US20220277926A1

    公开(公告)日:2022-09-01

    申请号:US17753298

    申请日:2020-08-25

    IPC分类号: H01J37/20 H01L21/683

    摘要: Systems and methods for wafer grounding and wafer grounding location adjustment are disclosed. A first method may include receiving a first value of an electric characteristic associated with the wafer being grounded by an electric signal; determining a first control parameter using at least the first value; and controlling a characteristic of the electric signal using the first control parameter and the first value. A second method for adjusting a grounding location for a wafer may include terminating an electric connection between the wafer and at least one grounding pin in contact the wafer; adjusting a relative position between the wafer and the grounding pin; and restoring the electric connection between the grounding pin and the wafer. A third method may include causing a grounding pin to penetrate through a coating on the wafer by impact; and establishing an electrical connection between the grounding pin and the wafer.

    METHOD, APPARATUS, AND SYSTEM FOR DYNAMICALLY CONTROLLING AN ELECTROSTATIC CHUCK DURING AN INSPECTION OF WAFER

    公开(公告)号:US20230178406A1

    公开(公告)日:2023-06-08

    申请号:US17913149

    申请日:2021-03-18

    IPC分类号: H01L21/683 H01J37/20

    摘要: An electrostatic chuck control system configured to be utilized during an inspection process of a wafer, the electrostatic chuck control system comprising an electrostatic chuck of a stage configured to be undocked during the inspection process, wherein the electrostatic chuck comprises a plurality of components configured to influence an interaction between the wafer and the electrostatic chuck during the inspection process, a first sensor configured to generate measurement data between at least some of the plurality of components and the wafer, and a controller including circuitry configured to receive the measurement data to determine characteristics of the wafer relative to the electrostatic chuck and to generate adjustment data to enable adjusting, while the stage is undocked, at least some of the plurality of components based on the determined characteristics.

    VIBRATION DAMPING AND RESONANCE REDUCTION FOR ION PUMP

    公开(公告)号:US20230114067A1

    公开(公告)日:2023-04-13

    申请号:US17798061

    申请日:2021-02-04

    IPC分类号: H01J41/12 H01J37/28

    摘要: Apparatuses and systems for damping vibration of a vacuum vessel mounted with a pump include a pump body and a damping element coupled to the pump body, wherein the pump body and the damping element form a mass-based damper, and wherein the pump body forms a mass component of the mass-based damper; and the damping element forms a damping component of the mass-based damper. The apparatuses and systems also include a pump body configured to be secured to a column of a charged-particle inspection apparatus, a sensor coupled to the pump body, an actuator coupled to the pump body, and a circuitry communicatively coupled to the sensor and the actuator for receiving motion data indicative of a vibration of the column; determining a damping based on the motion data; and actuate the actuator to react to the vibration of the column in accordance with the damping.

    SYSTEMS AND METHODS FOR FOCUSING CHARGED -PARTICLE BEAMS

    公开(公告)号:US20220068590A1

    公开(公告)日:2022-03-03

    申请号:US17418741

    申请日:2019-12-19

    摘要: Systems and methods for irradiating a sample with a charged-particle beam are disclosed. The charged-particle beam system may comprise a stage configured to hold a sample and is movable in at least one of X-Y-Z axes. The charged-particle beam system may further comprise a position sensing system to determine a lateral and vertical displacement of the stage, and a beam deflection controller configured to apply a first signal to deflect a primary charged-particle beam incident on the sample to at least partly compensate for the lateral displacement, and to apply a second signal to adjust a focus of the deflected charged-particle beam incident on the sample to at least partly compensate for the vertical displacement of the stage. The first and second signals may comprise an electrical signal having a high bandwidth in a range of 10 kHz to 50 kHz, and 50 kHz to 200 kHz, respectively.