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35 条记录 (耗时 0.025 秒)

    MULTI-DIRECTIONAL TRENCHING OF A PLURALITY OF DIES IN MANUFACTURING SUPERJUNCTION DEVICES
    21.
    发明申请
    MULTI-DIRECTIONAL TRENCHING OF A PLURALITY OF DIES IN MANUFACTURING SUPERJUNCTION DEVICES 审中-公开
    制造超级设备中多种多样的方式的多方向性

    公开(公告)号：US20090085148A1

    公开(公告)日：2009-04-02

    申请号：US12031909

    申请日：2008-02-15

    申请人： Takeshi Ishiguro ,  Kenji Sugiura ,  Hugh J. Griffin

    发明人： Takeshi Ishiguro ,  Kenji Sugiura ,  Hugh J. Griffin

    IPC分类号： H01L21/764 ,  H01L27/10

    CPC分类号： H01L29/0634

    摘要： A method of manufacturing a superjunction device includes providing a semiconductor wafer having a plurality of dies. A first plurality of trenches having a first orientation are formed in a first die. A second plurality of trenches having a second orientation are formed in a second die. The second orientation is different from the first orientation.

    摘要翻译： 制造超结装置的方法包括提供具有多个管芯的半导体晶片。 在第一模具中形成具有第一取向的第一多个沟槽。 具有第二取向的第二多个沟槽形成在第二管芯中。 第二方向与第一方向不同。

    Method of manufacturing substances by supercritical fluid chromatography
    26.
    发明授权
    Method of manufacturing substances by supercritical fluid chromatography 有权
    超临界流体色谱法制造物质的方法

    公开(公告)号：US08158004B2

    公开(公告)日：2012-04-17

    申请号：US13138672

    申请日：2009-10-22

    申请人： Kenichiro Miyazawa ,  Takeshi Ishiguro

    发明人： Kenichiro Miyazawa ,  Takeshi Ishiguro

    IPC分类号： B01D15/08

    CPC分类号： G01N30/34 ,  B01D15/166 ,  B01D15/40 ,  G01N30/84

    摘要： Provided is a method of manufacturing target substances with use of supercritical fluid chromatography, by which the following are achieved: solution of a problem at the time of sequential injections of samples containing the target substances; an increase of a treatment amount of separation per unit time; and improvement of efficiency in separation. The method includes the steps of: injecting the sample containing the target substances into a mobile phase; and returning composition of the mobile phase to a pre-change state after changing the composition of the mobile phase. The step of returning the composition of the mobile phase to the pre-change state after changing the composition of the mobile phase is performed during a period of time from detection of a peak of one of the target substances which is eluted latest from a column among the target substances separated by the supercritical fluid chromatography apparatus to injection of the next sample, whereby the problem is solved.

    摘要翻译： 提供了使用超临界流体色谱法制造目标物质的方法，通过该方法实现以下目的：在连续注射含有目标物质的样品时的问题的解决方案; 每单位时间处理量的增加; 并提高分离效率。 该方法包括以下步骤：将含有目标物质的样品注入流动相中; 并且在改变流动相的组成之后将流动相的组成返回到预改变状态。 在改变流动相的组成之后将流动相的组成返回到改变前状态的步骤是在检测到最近从柱中洗脱的目标物质的一个峰的一段时间内进行的 由超临界流体色谱仪分离的目标物质注入下一个样品，从而解决了问题。

    Multi-angle rotation for ion implantation of trenches in superjunction devices
    27.
    发明授权
    Multi-angle rotation for ion implantation of trenches in superjunction devices 有权
    多角度旋转用于离子注入超导结器件中的沟槽

    公开(公告)号：US08114751B2

    公开(公告)日：2012-02-14

    申请号：US12914623

    申请日：2010-10-28

    申请人： Takeshi Ishiguro ,  Hugh J. Griffin ,  Kenji Sugiura

    发明人： Takeshi Ishiguro ,  Hugh J. Griffin ,  Kenji Sugiura

    IPC分类号： H01L21/425

    CPC分类号： H01L21/26586 ,  H01L29/045 ,  H01L29/0634

    摘要： A method of manufacturing a semiconductor device includes providing a semiconductor wafer and forming at least one first trench in the wafer having first and second sidewalls and a first orientation on the wafer. The first sidewall of the at least one first trench is implanted with a dopant of a first conductivity at a first implantation direction. The first sidewall of the at least one first trench is implanted with the dopant of the first conductivity at a second implantation direction. The second implantation direction is orthogonal to the first implantation direction. The first and second implantation directions are non-orthogonal to the first sidewall.

    摘要翻译： 一种制造半导体器件的方法包括提供半导体晶片并且在晶片中形成具有第一和第二侧壁的晶片中的至少一个第一沟槽和在晶片上的第一取向。 所述至少一个第一沟槽的第一侧壁在第一注入方向上注入具有第一导电性的掺杂剂。 至少一个第一沟槽的第一侧壁在第二植入方向上注入第一导电性的掺杂剂。 第二注入方向与第一注入方向正交。 第一和第二注入方向与第一侧壁不正交。

    Storage apparatus and data integrity assurance method
    28.
    发明授权
    Storage apparatus and data integrity assurance method 有权
    存储设备和数据完整性保证方法

    公开(公告)号：US08041850B2

    公开(公告)日：2011-10-18

    申请号：US12310670

    申请日：2009-02-19

    申请人： Shinichi Kasahara ,  Osamu Torigoe ,  Tetsuya Kojima ,  Takeshi Ishiguro

    发明人： Shinichi Kasahara ,  Osamu Torigoe ,  Tetsuya Kojima ,  Takeshi Ishiguro

    IPC分类号： G06F3/00 ,  G06F13/28 ,  G06F13/38 ,  G06F5/00

    CPC分类号： G06F11/1076 ,  G06F2211/1009

    摘要： A channel control unit of a storage apparatus is provided with: a variable-length DMA (Direct Memory Access) that performs data transfer of variable-length data sent to or received from the host computer in accordance with an I/O request; a fixed-length DMA that performs data transfer of fixed-length data to and from the cache memory; and a buffer intervening between the variable-length DMA and the fixed-length DMA. In performing the data transfer of the fixed-length data to the cache memory, the fixed-length DMA divides the variable-length data into multiple sets of the fixed-length data each having a data size equivalent to a unit size of data managed in the cache memory, and adds a first integrity code to the last fixed-length data set of the fixed-length data sets generated by the division, the first integrity code being generated based on the entire variable-length data.

    摘要翻译： 存储装置的信道控制单元具有：可变长度DMA（直接存储器访问），其根据I / O请求执行向主机发送或从其接收的可变长度数据的数据传输; 一个固定长度的DMA，用于执行固定长度数据到和从高速缓冲存储器的数据传输; 以及介于可变长度DMA和固定长度DMA之间的缓冲器。 在将固定长度数据的数据传输执行到高速缓冲存储器时，固定长度的DMA将可变长度数据划分为多组固定长度数据，每组固定长度数据具有与管理的数据的单位大小相等的数据大小 高速缓存存储器，并且将第一完整性代码添加到由分割生成的固定长度数据集的最后固定长度数据集合中，基于整个可变长度数据生成第一完整性代码。

    Multi-angle rotation for ion implantation of trenches in superjunction devices
    29.
    发明授权
    Multi-angle rotation for ion implantation of trenches in superjunction devices 有权
    多角度旋转用于离子注入超导结器件中的沟槽

    公开(公告)号：US07846821B2

    公开(公告)日：2010-12-07

    申请号：US12371025

    申请日：2009-02-13

    申请人： Takeshi Ishiguro ,  Hugh J. Griffin ,  Kenji Sugiura

    发明人： Takeshi Ishiguro ,  Hugh J. Griffin ,  Kenji Sugiura

    IPC分类号： H01L21/425

    CPC分类号： H01L21/26586 ,  H01L29/045 ,  H01L29/0634

    摘要： A method of manufacturing a semiconductor device includes providing a semiconductor wafer and forming at least one first trench in the wafer having first and second sidewalls and a first orientation on the wafer. The first sidewall of the at least one first trench is implanted with a dopant of a first conductivity at a first implantation direction. The first sidewall of the at least one first trench is implanted with the dopant of the first conductivity at a second implantation direction. The second implantation direction is orthogonal to the first implantation direction. The first and second implantation directions are non-orthogonal to the first sidewall.

    摘要翻译： 一种制造半导体器件的方法包括提供半导体晶片并且在晶片中形成具有第一和第二侧壁的晶片中的至少一个第一沟槽和在晶片上的第一取向。 所述至少一个第一沟槽的第一侧壁在第一注入方向上注入具有第一导电性的掺杂剂。 至少一个第一沟槽的第一侧壁在第二植入方向上注入第一导电性的掺杂剂。 第二注入方向与第一注入方向正交。 第一和第二注入方向与第一侧壁不正交。

    METHODS FOR MANUFACTURING A TRENCH TYPE SEMICONDUCTOR DEVICE HAVING A THERMALLY SENSITIVE REFILL MATERIAL
    30.
    发明申请
    METHODS FOR MANUFACTURING A TRENCH TYPE SEMICONDUCTOR DEVICE HAVING A THERMALLY SENSITIVE REFILL MATERIAL 有权
    用于制造具有热敏感材料的TRENCH型半导体器件的方法

    公开(公告)号：US20080258239A1

    公开(公告)日：2008-10-23

    申请号：US11962523

    申请日：2007-12-21

    申请人： Takeshi Ishiguro

    发明人： Takeshi Ishiguro

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/66712 ,  H01L21/26586 ,  H01L29/0634 ,  H01L29/0653

    摘要： Methods for manufacturing trench type semiconductor devices involve refilling the trenches after high temperature processing steps are performed. The methods allow thermally unstable materials to be used as refill materials for the trenches of the device. Trench type semiconductor devices containing thermally unstable refill materials are also provided. In particular, methods of manufacturing and devices of a trench type semiconductor devices containing organic refill materials are provided.

    摘要翻译： 用于制造沟槽型半导体器件的方法包括在执行高温处理步骤之后重新填充沟槽。 该方法允许热不稳定材料用作装置沟槽的补充材料。 还提供了包含热不稳定填充材料的沟槽型半导体器件。 特别地，提供了制造方法和包含有机填充材料的沟槽型半导体器件的器件。