公开(公告)号：US08129270B1

公开(公告)日：2012-03-06

申请号：US12332017

申请日：2008-12-10

申请人： Anand Chandrashekar ,  Raashina Humayun

发明人： Anand Chandrashekar ,  Raashina Humayun

IPC分类号： H01L21/44

CPC分类号： H01L21/76838 ,  C23C16/14 ,  C23C16/56 ,  H01L21/28556

摘要： Top-down methods of increasing reflectivity of tungsten films to form films having high reflectivity, low resistivity and low roughness are provided. The methods involve bulk deposition of tungsten followed by a removing a top portion of the deposited tungsten. In particular embodiments, removing a top portion of the deposited tungsten involve exposing it to a fluorine-containing plasma. The methods produce low resistivity tungsten bulk layers having lower roughness and higher reflectivity. The smooth and highly reflective tungsten layers are easier to photopattern than conventional low resistivity tungsten films. Applications include forming tungsten bit lines.

摘要翻译： 提供了增加钨膜的反射率以形成具有高反射率，低电阻率和低粗糙度的膜的自顶向下的方法。 这些方法涉及钨的大量沉积，然后除去沉积的钨的顶部。 在特定实施例中，去除沉积的钨的顶部部分包括使其暴露于含氟等离子体。 该方法产生具有较低粗糙度和较高反射率的低电阻率钨体层。 与常规的低电阻率钨膜相比，光滑和高反射性的钨层比光图案更容易。 应用包括形成钨线。

公开(公告)号：US08501620B2

公开(公告)日：2013-08-06

申请号：US13412534

申请日：2012-03-05

申请人： Anand Chandrashekar ,  Raashina Humayun

发明人： Anand Chandrashekar ,  Raashina Humayun

IPC分类号： H01L21/44

CPC分类号： H01L21/76838 ,  C23C16/14 ,  C23C16/56 ,  H01L21/28556

摘要： Top-down methods of increasing reflectivity of tungsten films to form films having high reflectivity, low resistivity and low roughness are provided. The methods involve bulk deposition of tungsten followed by a removing a top portion of the deposited tungsten. In particular embodiments, removing a top portion of the deposited tungsten involve exposing it to a fluorine-containing plasma. The methods produce low resistivity tungsten bulk layers having lower roughness and higher reflectivity. The smooth and highly reflective tungsten layers are easier to photopattern than conventional low resistivity tungsten films. Applications include forming tungsten bit lines.

摘要翻译： 提供了增加钨膜的反射率以形成具有高反射率，低电阻率和低粗糙度的膜的自顶向下的方法。 这些方法涉及钨的大量沉积，然后除去沉积的钨的顶部。 在特定实施例中，去除沉积的钨的顶部部分包括使其暴露于含氟等离子体。 该方法产生具有较低粗糙度和较高反射率的低电阻率钨体层。 与常规的低电阻率钨膜相比，光滑和高反射性的钨层比光图案更容易。 应用包括形成钨线。

公开(公告)号：US20100119708A1

公开(公告)日：2010-05-13

申请号：US11391016

申请日：2006-03-28

申请人： Lawrence J. Overzet ,  Gil S. Lee ,  Anand Chandrashekar ,  Seetharaman Ramachandran ,  Jeong-Soo Lee ,  Slade H. Gardner

发明人： Lawrence J. Overzet ,  Gil S. Lee ,  Anand Chandrashekar ,  Seetharaman Ramachandran ,  Jeong-Soo Lee ,  Slade H. Gardner

IPC分类号： C23C16/00 ,  B32B5/02

CPC分类号： C23C16/045 ,  B82Y30/00 ,  C23C16/24 ,  C23C16/345 ,  Y10T428/249979

摘要： The present invention includes compositions, devices and methods for filling structures of high aspect ratio elements for growth amplification and device fabrication. A method includes a method of filling a structure comprising the steps of providing one or more structures, each structure having a plurality of high aspect ratio elements, wherein the aspect ratio is at least 5; and coating the plurality of high aspect ratio elements with at least one solidifying material produced by a form of chemical vapor deposition thereby forming a structured-film. Compositions of the present invention are solid formed structures that are less fragile, do not require such delicate handling to avoid serious degradation, are more stable, last longer, do not deform, and exhibit little stress as well as improved properties that include mechanical, chemical, electrical, biologic, and optical.

摘要翻译： 本发明包括用于填充用于生长放大和器件制造的高纵横比元件的结构的组合物，装置和方法。 一种方法包括一种填充结构的方法，包括以下步骤：提供一个或多个结构，每个结构具有多个高纵横比元素，其中纵横比为至少5; 并用至少一种通过化学气相沉积形成的凝固材料涂覆多个高纵横比元件，从而形成结构化膜。 本发明的组合物是较不脆弱的固体成形结构，不需要这种精细的处理以避免严重的降解，更稳定，持久更久，不变形，并且表现出很小的应力以及包括机械，化学 ，电气，生物和光学。