公开(公告)号：US20100119708A1

公开(公告)日：2010-05-13

申请号：US11391016

申请日：2006-03-28

申请人： Lawrence J. Overzet ,  Gil S. Lee ,  Anand Chandrashekar ,  Seetharaman Ramachandran ,  Jeong-Soo Lee ,  Slade H. Gardner

发明人： Lawrence J. Overzet ,  Gil S. Lee ,  Anand Chandrashekar ,  Seetharaman Ramachandran ,  Jeong-Soo Lee ,  Slade H. Gardner

IPC分类号： C23C16/00 ,  B32B5/02

CPC分类号： C23C16/045 ,  B82Y30/00 ,  C23C16/24 ,  C23C16/345 ,  Y10T428/249979

摘要： The present invention includes compositions, devices and methods for filling structures of high aspect ratio elements for growth amplification and device fabrication. A method includes a method of filling a structure comprising the steps of providing one or more structures, each structure having a plurality of high aspect ratio elements, wherein the aspect ratio is at least 5; and coating the plurality of high aspect ratio elements with at least one solidifying material produced by a form of chemical vapor deposition thereby forming a structured-film. Compositions of the present invention are solid formed structures that are less fragile, do not require such delicate handling to avoid serious degradation, are more stable, last longer, do not deform, and exhibit little stress as well as improved properties that include mechanical, chemical, electrical, biologic, and optical.

摘要翻译： 本发明包括用于填充用于生长放大和器件制造的高纵横比元件的结构的组合物，装置和方法。 一种方法包括一种填充结构的方法，包括以下步骤：提供一个或多个结构，每个结构具有多个高纵横比元素，其中纵横比为至少5; 并用至少一种通过化学气相沉积形成的凝固材料涂覆多个高纵横比元件，从而形成结构化膜。 本发明的组合物是较不脆弱的固体成形结构，不需要这种精细的处理以避免严重的降解，更稳定，持久更久，不变形，并且表现出很小的应力以及包括机械，化学 ，电气，生物和光学。

公开(公告)号：US20110097902A1

公开(公告)日：2011-04-28

申请号：US12908258

申请日：2010-10-20

申请人： Harmeet Singh ,  Sanket Sant ,  Shang-I Chou ,  Vahid Vahedi ,  Raphael Casaes ,  Seetharaman Ramachandran

发明人： Harmeet Singh ,  Sanket Sant ,  Shang-I Chou ,  Vahid Vahedi ,  Raphael Casaes ,  Seetharaman Ramachandran

IPC分类号： H01L21/3065 ,  H01L21/26

CPC分类号： H01L21/02057 ,  H01L21/67017 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

摘要： A wafer is provided into an entrance load lock chamber. A vacuum is created in the entrance load lock chamber. The wafer is transported to a processing tool. The wafer is processed in a process chamber to provide a processed wafer, wherein the processing forms halogen residue. A degas step is provided in the process chamber after processing the wafer. The processed wafer is transferred into a degas chamber. The processed wafer is treated in the degas chamber with UV light and a flow of gas comprising at least one of ozone, oxygen, or H2O. The flow of gas is stopped. The UV light is stopped. The processed wafer is removed from the degas chamber.

摘要翻译： 将晶片设置在入口加载锁定室中。 在入口装载锁定室中产生真空。 晶片被输送到处理工具。 在处理室中处理晶片以提供经处理的晶片，其中处理形成卤素残基。 在处理晶片之后，在处理室中提供脱气步骤。 将经处理的晶片转移到脱气室中。 处理的晶片在脱气室中用UV光和包含臭氧，氧气或H 2 O中的至少一种的气体流进行处理。 停止气体流动。 UV灯停止。 将经处理的晶片从脱气室中取出。

公开(公告)号：US08525139B2

公开(公告)日：2013-09-03

申请号：US12908258

申请日：2010-10-20

申请人： Harmeet Singh ,  Sanket Sant ,  Shang-I Chou ,  Vahid Vahedi ,  Raphael Casaes ,  Seetharaman Ramachandran

发明人： Harmeet Singh ,  Sanket Sant ,  Shang-I Chou ,  Vahid Vahedi ,  Raphael Casaes ,  Seetharaman Ramachandran

IPC分类号： A61N5/06 ,  C23F1/00 ,  H01L21/3065 ,  H01L21/26

CPC分类号： H01L21/02057 ,  H01L21/67017 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

摘要： A wafer is provided into an entrance load lock chamber. A vacuum is created in the entrance load lock chamber. The wafer is transported to a processing tool. The wafer is processed in a process chamber to provide a processed wafer, wherein the processing forms halogen residue. A degas step is provided in the process chamber after processing the wafer. The processed wafer is transferred into a degas chamber. The processed wafer is treated in the degas chamber with UV light and a flow of gas comprising at least one of ozone, oxygen, or H2O. The flow of gas is stopped. The UV light is stopped. The processed wafer is removed from the degas chamber.

摘要翻译： 将晶片设置在入口加载锁定室中。 在入口装载锁定室中产生真空。 晶片被输送到处理工具。 在处理室中处理晶片以提供经处理的晶片，其中处理形成卤素残基。 在处理晶片之后，在处理室中提供脱气步骤。 将经处理的晶片转移到脱气室中。 处理的晶片在脱气室中用UV光和包含臭氧，氧气或H 2 O中的至少一种的气体流进行处理。 停止气体流动。 UV灯停止。 将经处理的晶片从脱气室中取出。