公开(公告)号：US20180261453A1

公开(公告)日：2018-09-13

申请号：US15917079

申请日：2018-03-09

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Sanjeev BALUJA ,  Mayur G. KULKARNI

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L21/02274 ,  C23C16/4408 ,  C23C16/45502 ,  H01J37/3244 ,  H01J37/32862 ,  H01L21/02208

Abstract: Apparatus and methods for depositing a film in a PECVD chamber while simultaneously flowing a purge gas from beneath a substrate support are provided herein. In embodiments disclosed herein, a combined gas exhaust volume circumferentially disposed about the substrate support, below a first volume and above a second volume, draws processing gases from the first volume down over an edge of a first surface of the substrate support and simultaneously draws purge gases from the second volume upward over an edge of a second surface of the substrate support. The gases are than evacuated from the combined exhaust volume through an exhaust port fluidly coupled to a vacuum source.

公开(公告)号：US20180023193A1

公开(公告)日：2018-01-25

申请号：US15654436

申请日：2017-07-19

Applicant: Applied Materials, Inc.

Inventor： Sanjeev BALUJA ,  Kalyanjit GHOSH ,  Ren-Guan DUAN ,  Mayur G. KULKARNI ,  Gregory SIU ,  Praket P. JHA ,  Deenesh PADHI ,  Lei GUO ,  Wei Min CHAN ,  Ajit BALAKRISHNA

IPC: C23C16/44

CPC classification number: C23C16/4405 ,  C23C16/4408 ,  C23C16/45519 ,  H01J37/00

Abstract: Embodiments disclosed herein generally relate to systems and methods to prevent free radical damage to sensitive components in a process chamber and optimizing flow profiles. The processing chamber utilizes a cover substrate on lift pins and an inert bottom purge flow to shield the substrate support from halogen reactants. During a clean process, the cover substrate and the purge flow restricts halogen reactants from contacting the substrate support. The method of cleaning includes placing a cover substrate on a plurality of lift pins that extend through a substrate support in a processing chamber, raising the cover substrate via the lift pins to expose a space between the cover substrate and the substrate support, supplying a halogen containing gas into the processing chamber, supplying a second gas through an opening in the processing chamber, and flowing the second gas through the space between the cover substrate and the substrate support.

公开(公告)号：US20160312359A1

公开(公告)日：2016-10-27

申请号：US15138209

申请日：2016-04-25

Applicant: Applied Materials, Inc.

Inventor： Dale R. DUBOIS ,  Kalyanjit GHOSH ,  Kien N. CHUC ,  Mayur G. KULKARNI ,  Sanjeev BALUJA ,  Yanjie WANG ,  Sungjin KIM

IPC: C23C16/455

CPC classification number: C23C16/4401 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32651

Abstract: A process chamber is provided including a sidewall, a substrate support having an outer ledge, and a gas inlet beneath the substrate support. The process chamber further includes a first liner disposed around a bottom surface of the outer ledge of the substrate support. The first liner has an inner surface separated from the outer ledge of the substrate support by a first gap. The process chamber further includes a flow isolator ring having an inner bottom surface disposed on the outer ledge of the substrate support and an outer bottom surface extending outwardly relative to the inner bottom surface, the outer bottom surface overlying the first gap.

Abstract translation: 提供了一种处理室，其包括侧壁，具有外凸缘的基板支撑件和在基板支撑件下方的气体入口。 处理室还包括围绕衬底支撑件的外凸缘的底表面设置的第一衬套。 第一衬垫具有通过第一间隙与衬底支撑件的外凸缘分离的内表面。 处理室还包括流动隔离器环，其具有设置在基板支撑件的外凸缘上的内底表面和相对于内底表面向外延伸的外底表面，外底表面覆盖第一间隙。