公开(公告)号：US20160181088A1

公开(公告)日：2016-06-23

申请号：US14975133

申请日：2015-12-18

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Mayur G. KULKARNI ,  Sanjeev BALUJA ,  Kien N. CHUC ,  Sungjin KIM ,  Yanjie WANG

IPC: H01L21/02

CPC classification number: C23C16/4412 ,  C23C16/4401 ,  H01J37/32477

Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

Abstract translation: 本文公开了一种用于处理衬底的处理室。 在一个实施例中，处理室包括设置在处理室的内部容积内的衬套组件，以及设置在室的内部容积中的C形通道，其限定衬套组件。 在另一个实施例中，本文公开了一种设置在处理室的内部容积中的处理套件。 该处理套件包括衬套组件，C通道和设置在内部容积中的隔离器。 C通道和隔离器限定衬套组件。 本文还描述了通过将前体气体流入处理室中将硅基材料沉积在基底上的方法。

公开(公告)号：US20180274095A1

公开(公告)日：2018-09-27

申请号：US15992330

申请日：2018-05-30

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Mayur G. KULKARNI ,  Sanjeev BALUJA ,  Kien N. CHUC ,  Sungjin KIM ,  Yanjie WANG

IPC: C23C16/44 ,  H01J37/32

Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

公开(公告)号：US20200325577A1

公开(公告)日：2020-10-15

申请号：US16912417

申请日：2020-06-25

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Mayur G. KULKARNI ,  Sanjeev BALUJA ,  Kien N. CHUC ,  Sungjin KIM ,  Yanjie WANG

IPC: C23C16/44 ,  H01J37/32

Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

公开(公告)号：US20160312359A1

公开(公告)日：2016-10-27

申请号：US15138209

申请日：2016-04-25

Applicant: Applied Materials, Inc.

Inventor： Dale R. DUBOIS ,  Kalyanjit GHOSH ,  Kien N. CHUC ,  Mayur G. KULKARNI ,  Sanjeev BALUJA ,  Yanjie WANG ,  Sungjin KIM

IPC: C23C16/455

CPC classification number: C23C16/4401 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32651

Abstract: A process chamber is provided including a sidewall, a substrate support having an outer ledge, and a gas inlet beneath the substrate support. The process chamber further includes a first liner disposed around a bottom surface of the outer ledge of the substrate support. The first liner has an inner surface separated from the outer ledge of the substrate support by a first gap. The process chamber further includes a flow isolator ring having an inner bottom surface disposed on the outer ledge of the substrate support and an outer bottom surface extending outwardly relative to the inner bottom surface, the outer bottom surface overlying the first gap.

Abstract translation: 提供了一种处理室，其包括侧壁，具有外凸缘的基板支撑件和在基板支撑件下方的气体入口。 处理室还包括围绕衬底支撑件的外凸缘的底表面设置的第一衬套。 第一衬垫具有通过第一间隙与衬底支撑件的外凸缘分离的内表面。 处理室还包括流动隔离器环，其具有设置在基板支撑件的外凸缘上的内底表面和相对于内底表面向外延伸的外底表面，外底表面覆盖第一间隙。