公开(公告)号：US10766824B2

公开(公告)日：2020-09-08

申请号：US15807508

申请日：2017-11-08

Applicant: APPLIED Materials, Inc.

Inventor： Kaushal Gangakhedkar ,  Jennifer Y. Sun ,  Xiao-Ming He

IPC: C04B35/64 ,  H01J37/32 ,  C04B35/622 ,  C04B41/50 ,  C04B41/00 ,  C04B41/87 ,  C04B35/505 ,  C04B35/50

Abstract: Methods comprise performing two or more thermal cycles on an article comprising a body and a ceramic coating. Each thermal cycle of the two or more thermal cycles comprise heating the ceramic article to a target temperature at a first ramping rate. Each thermal cycle further comprises maintaining the article at the target temperature for a first duration of time and then cooling the article to a second target temperature at a second ramping rate. The method further comprises submerging the article in a bath for a second duration of time to remove the particles from the ceramic coating.

公开(公告)号：US10685864B2

公开(公告)日：2020-06-16

申请号：US15616364

申请日：2017-06-07

Applicant: Applied Materials, Inc.

Inventor： Kaushal Gangakhedkar ,  Kallol Bera ,  Joseph Yudovsky

IPC: H01L21/687 ,  H01L21/683 ,  H01L21/67

Abstract: Susceptor assemblies comprising a susceptor base and a plurality of pie-shaped skins thereon are described. A pie anchor can be positioned in the center of the susceptor base to hold the pie-shaped skins in place during processing.

公开(公告)号：US20190244842A1

公开(公告)日：2019-08-08

申请号：US16388132

申请日：2019-04-18

Applicant: Applied Materials, Inc.

Inventor： Abraham Ravid ,  Kevin Griffin ,  Joseph Yudovsky ,  Kaushal Gangakhedkar ,  Dmitry A. Dzilno ,  Alex Minkovich

IPC: H01L21/67 ,  C23C16/455 ,  H01L21/687 ,  C23C16/52 ,  C23C16/458

CPC classification number: H01L21/67259 ,  C23C16/45544 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/67248 ,  H01L21/68764 ,  H01L21/68771

Abstract: Apparatus and methods of measuring and controlling the gap between a susceptor assembly and a gas distribution assembly are described. Apparatus and methods for positional control and temperature control for wafer transfer purposes are also described.

公开(公告)号：US10351956B2

公开(公告)日：2019-07-16

申请号：US14706405

申请日：2015-05-07

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Kaushal Gangakhedkar

IPC: C23C16/458 ,  H02K7/14 ,  H02K7/06

Abstract: Apparatus and methods for processing a semiconductor wafer including a two-axis lift-rotation motor center pedestal with vacuum capabilities. Wafers are subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer through interface with the motor assembly.

公开(公告)号：US10184180B2

公开(公告)日：2019-01-22

申请号：US14706405

申请日：2015-05-07

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Kaushal Gangakhedkar

IPC: C23C16/458 ,  H02K7/14 ,  H02K7/06

CPC classification number: C23C16/458 ,  C23C16/4584 ,  H02K7/06 ,  H02K7/14

Abstract: Apparatus and methods for processing a semiconductor wafer including a two-axis lift-rotation motor center pedestal with vacuum capabilities. Wafers are subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer through interface with the motor assembly.

公开(公告)号：US20180211863A1

公开(公告)日：2018-07-26

申请号：US15927066

申请日：2018-03-20

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Kaushal Gangakhedkar

IPC: H01L21/683 ,  C23C16/46 ,  C23C16/458 ,  C23C16/50 ,  C23C16/455 ,  H01L21/687

CPC classification number: H01L21/6838 ,  C23C16/45544 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/68735

Abstract: Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.

公开(公告)号：US20180023191A1

公开(公告)日：2018-01-25

申请号：US15657721

申请日：2017-07-24

Applicant: Applied Materials, Inc.

Inventor： Kaushal Gangakhedkar

IPC: C23C14/50 ,  H01L21/687

CPC classification number: C23C14/505 ,  C23C16/45551 ,  C23C16/4584 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

Abstract: Pedestal assemblies with a thermal barrier plate, a torque plate and at least one kinematic mount to change a plane formed by the thermal barrier plate are described. Susceptor assemblies and processing chambers incorporating the pedestal assemblies are also described. Methods of leveling a susceptor to form parallel planes between the susceptor surface and a gas distribution assembly surface are also described.

公开(公告)号：US20150236566A1

公开(公告)日：2015-08-20

申请号：US14706405

申请日：2015-05-07

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Kaushal Gangakhedkar

IPC: H02K7/10 ,  C23C16/455 ,  C23C16/458 ,  H02K7/14

CPC classification number: C23C16/458 ,  C23C16/4584 ,  H02K7/06 ,  H02K7/14

Abstract: Apparatus and methods for processing a semiconductor wafer including a two-axis lift-rotation motor center pedestal with vacuum capabilities. Wafers are subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer through interface with the motor assembly.

Abstract translation: 用于处理包括具有真空能力的双轴提升旋转马达中心基座的半导体晶片的装置和方法。 晶片经受顶表面和底表面之间的压差，使得足够的力防止晶片在加工过程中移动，压差通过与电机组件的接口施加减小的压力到晶片的背面而产生。

公开(公告)号：US12230530B2

公开(公告)日：2025-02-18

申请号：US18630688

申请日：2024-04-09

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Kaushal Gangakhedkar

IPC: H01L21/683 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/687

Abstract: Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.

公开(公告)号：US20230146344A1

公开(公告)日：2023-05-11

申请号：US18095827

申请日：2023-01-11

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Kaushal Gangakhedkar

IPC: H01L21/683 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/687

CPC classification number: H01L21/6838 ,  C23C16/45544 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/68735

Abstract: Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.