公开(公告)号：US20220220421A1

公开(公告)日：2022-07-14

申请号：US17613337

申请日：2020-05-20

Applicant: BASF SE

Inventor： Joannes Theodorus Valentinus Hoogboom ,  Andreas Klipp ,  Jhih Jheng Ke ,  Che Wei Wang ,  Chia Ching Ting

IPC: C11D7/32 ,  C11D3/34 ,  C11D3/28 ,  C11D3/00 ,  C11D11/00 ,  H01L21/02 ,  C09K13/00

Abstract: Described herein is a method of using a cleaning composition in combination with one or more oxidants for removing post-etch or post-ash residue from the surface of a semiconductor substrate and/or for oxidative etching or partially oxidative etching of a layer or mask. Also described herein is the cleaning composition and a method of using the cleaning composition for removing post-etch or post-ash residue from the surface of a semiconductor substrate. Also described herein is a wet-etch composition including the cleaning composition and one or more oxidants as well as a method of using the wet-etch composition. Also described herein are a process for the manufacture of a semiconductor device from a semiconductor substrate and a kit including the cleaning composition and one or more oxidants.

公开(公告)号：US20220169956A1

公开(公告)日：2022-06-02

申请号：US17601740

申请日：2020-03-27

Applicant: BASF SE

Inventor： Chi Yueh Kao ,  Mei Chin Shen ,  Sheng Hsuan Wei ,  Daniel Loeffler ,  Andreas Klipp ,  Marcel Brill ,  Szilard Csihony ,  Frank Pirrung ,  Niklas Benjamin Heine

IPC: C11D7/26 ,  G03F7/40 ,  C11D11/00 ,  C11D7/50 ,  C11D7/24 ,  C11D7/02

Abstract: Described herein is a non-aqueous composition including (a) an organic protic solvent, (b) ammonia, and (c) at least one additive of formulae I or II where R1 is H R2 is selected from H, C1 to C10 alkyl, C1 to C10 alkoxy, C6 to C10 aryl, and C6 to C10 aroxy, R3 is selected from R2, R4 is selected from C1 to C10 alkyl, C1 to C10 alkoxy, C6 to C10 aryl, and C6 to C10 aroxy, R10, R12 are independently selected from C1 to C10 alkyl and C1 to C10 alkoxy, m is 1, 2 or 3, and n is 0 or an integer from 1 to 100.