公开(公告)号：US20220293018A1

公开(公告)日：2022-09-15

申请号：US17508866

申请日：2021-10-22

Applicant: BOE Technology Group Co., Ltd.

Inventor： Shuilang DONG ,  Xinhong LU ,  Jingshang ZHOU ,  Lei ZHAO ,  Zhanfeng CAO ,  Dapeng XUE ,  Lizhong WANG ,  Guangcai YUAN

IPC: G09F9/302 ,  H01L33/62 ,  G09F9/33

Abstract: The present application discloses an array substrate and a splicing screen. The array substrate provided by an embodiment of the present application includes: a flexible base, wherein the flexible base includes a display region, a first region and a second region, the display region and at least one of the first region and the second region are located in different planes, and the first region is located between the display region and the second region; a plurality of signal lines, arranged on the display region and the first region; a plurality of fan-out lines, arranged on the second region and connected with the plurality of signal lines in a one-to-one correspondence; and a buffer cushion, arranged on the first region, wherein an orthographic projection of the buffer cushion on the flexible base does not overlap with orthographic projections of the signal lines on the flexible base.

公开(公告)号：US20220131009A1

公开(公告)日：2022-04-28

申请号：US17356167

申请日：2021-06-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Tianmin ZHOU ,  Hehe HU ,  Xiaochun XU ,  Nianqi YAO ,  Dapeng XUE ,  Shuilang DONG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

公开(公告)号：US20210268505A1

公开(公告)日：2021-09-02

申请号：US17256077

申请日：2020-06-03

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qingzhao LIU ,  Shuilang DONG

IPC: B01L3/00 ,  G01N21/59

Abstract: The present disclosure provides a microfluidic substrate, a microfluidic chip and a micro total analysis system. The microfluidic substrate includes a substrate and an ultrasonic structure on the substrate. The ultrasonic structure is configured to generate ultrasonic waves during a droplet splitting process to vibrate a droplet.

公开(公告)号：US20210225286A1

公开(公告)日：2021-07-22

申请号：US16633377

申请日：2019-01-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Rui HUANG ,  Yupeng GAO ,  Jiangnan LU ,  Shuilang DONG

IPC: G09G3/3258 ,  G09G3/3291

Abstract: A display substrate, a display panel, and a manufacturing method and a driving method of a display substrate are provided. The display substrate includes a base substrate, a pixel circuit, and a photosensitive unit. The pixel circuit and the photosensitive unit are on the base substrate, the pixel circuit includes a first transistor, and an orthographic projection of the photosensitive unit on the base substrate at least partially overlaps with an orthographic projection of the first transistor on the base substrate.

公开(公告)号：US20250113541A1

公开(公告)日：2025-04-03

申请号：US18291389

申请日：2022-08-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Guangcai YUAN ,  Ce NING ,  Hehe HU ,  Nianqi YAO ,  Dapeng XUE ,  Shuilang DONG ,  Liping LEI ,  Dongfang WANG ,  Zhengliang LI

IPC: H10D30/67 ,  H10D30/01

Abstract: An oxide thin film transistor, a preparation method thereof, and an electronic device are provided. The oxide thin film transistor includes a base substrate, a gate electrode and a metal oxide semiconductor layer, a gate insulation layer arranged between the metal oxide semiconductor layer and the gate electrode; the gate insulation layer includes a silicon oxide insulation layer and a silicon nitride layer, the silicon nitride layer adopts a single-layer structure or include a plurality of silicon nitride sublayers which are sequentially stacked, the silicon oxide insulation layer is between the silicon nitride layer and the metal oxide semiconductor layer; at least a part of a region in the silicon nitride layer satisfies that the percentage content of Si—H bonds in the sum of Si—N bonds, N—H bonds and Si—H bonds is not more than 7.

公开(公告)号：US20250098225A1

公开(公告)日：2025-03-20

申请号：US18960308

申请日：2024-11-26

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Tianmin ZHOU ,  Hehe HU ,  Xiaochun XU ,  Nianqi YAO ,  Dapeng XUE ,  Shuilang DONG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

公开(公告)号：US20250048849A1

公开(公告)日：2025-02-06

申请号：US18922588

申请日：2024-10-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lei ZHAO ,  Zhiqiang JIAO ,  Xiaohu LI ,  Xiaoyun LIU ,  Shuilang DONG ,  Guangcai YUAN ,  Lilei ZHANG

IPC: H10K59/122 ,  H10K59/12 ,  H10K71/60

Abstract: A display substrate is provided, the display substrate has a plurality of sub-pixels arranged in an array, and includes a driving circuit substrate, a plurality of first electrodes, a pixel definition layer and a light-emitting material layer. The pixel definition layer is at least on a side of the plurality of first electrodes away from the driving circuit substrate, and includes a plurality of sub-pixel openings respectively exposing the plurality of first electrodes and at least one partition structure on the pixel definition layer. The light-emitting material layer is on a side of the pixel definition layer away from the driving circuit substrate and at least in the plurality of sub-pixel openings, the pixel definition layer includes a first pixel definition sub-layer and a second pixel definition sub-layer, and a width of the second pixel definition sub-layer is greater than a width of the first pixel defining sub-layer.

公开(公告)号：US20240097042A1

公开(公告)日：2024-03-21

申请号：US17781773

申请日：2021-06-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Guangcai YUAN ,  Ce NING ,  Nianqi YAO ,  Hehe HU ,  Liping LEI ,  Dongfang WANG ,  Dapeng XUE ,  Shuilang DONG ,  Zhengliang LI

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66742

Abstract: At least one embodiment of the present disclosure provides an oxide thin film transistor, a display device, and a preparation method of the oxide thin film transistor, and the oxide thin film transistor includes a base substrate; an oxide semiconductor layer provided on the base substrate, and an insulating layer provided on a side of the oxide semiconductor layer away from the base substrate; in which the insulating layer is made of oxide; the insulating layer includes a first insulating layer and a second insulating layer which are stacked; a density of the second insulating layer is greater than a density of the first insulating layer; and the second insulating layer is farther away from the base substrate than the first insulating layer.

公开(公告)号：US20230178562A1

公开(公告)日：2023-06-08

申请号：US18103355

申请日：2023-01-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Tianmin ZHOU ,  Hehe HU ,  Shuilang DONG ,  Wenhua WANG ,  Nianqi YAO

IPC: H01L27/12

CPC classification number: H01L27/1225

Abstract: A thin film transistor includes an active layer, a first loose layer and a first oxygen release layer. The first loose layer is at least disposed on a first surface of the active layer perpendicular to a thickness direction of the active layer, and is in contact with the active layer. A material of the first loose layer includes a first inorganic oxide insulating material. The first oxygen release layer is disposed on a surface of the first loose layer facing away from the active layer, and is in contact with the first loose layer. A material of the first oxygen release layer is a first oxygen-containing insulating material. A porosity of the first loose layer is different from a porosity of the first oxygen release layer, and/or an oxygen content of the first loose layer is different from an oxygen content of the first oxygen release layer.

公开(公告)号：US20220077264A1

公开(公告)日：2022-03-10

申请号：US17468638

申请日：2021-09-07

Applicant: FUZHOU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dapeng XUE ,  Guangcai YUAN ,  Xiaochun XU ,  Zheng LIU ,  Liangliang LI ,  Shuilang DONG ,  Lizhong WANG ,  Niangi YAO

IPC: H01L27/32

Abstract: The present disclosure provides a display substrate including: a base substrate, and a thin film transistor, an oxygen supplementing functional layer and an oxygen containing layer formed on the base substrate. The thin film transistor includes: an active layer in direct contact with the oxygen containing layer, and the active layer includes an oxide semiconductor material. The oxygen supplementing functional layer includes a metal oxide material and serves as a first electrode of the display substrate. The oxygen containing layer is between the oxygen supplementing functional layer and the base substrate.