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公开(公告)号：US20230350255A1
公开(公告)日：2023-11-02
申请号：US17791338
申请日：2021-08-18
Inventor： Hong LIU , Jingyi XU , Xiaochun XU , Jiantao LIU , Wanzhi CHEN , Chengfu XU , Bo LI , Yongqiang ZHANG , Peng LIU , Ruirui HAO , Yu FENG , Xinguo WU
IPC: G02F1/1368 , H10K59/124
CPC classification number: G02F1/1368 , H10K59/124
Abstract: The present disclosure provides a display substrate and a display panel, and belongs to the field of display technology. The present display substrate includes a display region and a peripheral region surrounding the display region; the display substrate includes: a base substrate; a plurality of insulating layers sequentially arranged along a direction away from the base substrate; wherein each of the plurality of insulating layers is located in the display region and the peripheral region; one or more protrusion structures arranged between at least two adjacent ones of the plurality of insulating layers and in the peripheral region.
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公开(公告)号：US20250098225A1
公开(公告)日：2025-03-20
申请号：US18960308
申请日：2024-11-26
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Lizhong WANG , Tianmin ZHOU , Hehe HU , Xiaochun XU , Nianqi YAO , Dapeng XUE , Shuilang DONG
IPC: H01L29/786 , H01L27/12 , H01L29/66
Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.
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公开(公告)号：US20220077264A1
公开(公告)日：2022-03-10
申请号：US17468638
申请日：2021-09-07
Inventor： Dapeng XUE , Guangcai YUAN , Xiaochun XU , Zheng LIU , Liangliang LI , Shuilang DONG , Lizhong WANG , Niangi YAO
IPC: H01L27/32
Abstract: The present disclosure provides a display substrate including: a base substrate, and a thin film transistor, an oxygen supplementing functional layer and an oxygen containing layer formed on the base substrate. The thin film transistor includes: an active layer in direct contact with the oxygen containing layer, and the active layer includes an oxide semiconductor material. The oxygen supplementing functional layer includes a metal oxide material and serves as a first electrode of the display substrate. The oxygen containing layer is between the oxygen supplementing functional layer and the base substrate.
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Patent Agency Ranking
公开(公告)号：US20230335029A1
公开(公告)日：2023-10-19
申请号：US17796660
申请日：2021-06-10
Inventor： Chongyang ZHAO , Yingmeng MIAO , Zhihua SUN , Feng QU , Xiaochun XU
CPC classification number: G09G3/20 , G11C19/28 , G09G2310/0286 , G09G2300/0408 , G09G2310/0202
Abstract: The present disclosure provides a display panel and a display device. The display panel includes p pixel unit groups, and each of the p pixel unit groups includes q rows of pixel units, both p and q being integers greater than or equal to 2. Pixel units in a same group are simultaneously supplied with a gate scan signal by a same shift register, and pixel units in a same group and in a same column are supplied with data voltage signals through different data lines, respectively.
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公开(公告)号：US20230176416A1
公开(公告)日：2023-06-08
申请号：US17921321
申请日：2021-05-12
Inventor： Jianhua HUANG , Yingying QU , Zhihua SUN , Yifu CHEN , Lingdan BO , Feng QU , Xiaochun XU , Shuming WANG
IPC: G02F1/1335 , G02F1/1337 , G02F1/1339
CPC classification number: G02F1/133514 , G02F1/1337 , G02F1/13394 , G02F1/133512
Abstract: Provided are a display panel and a display apparatus. The display panel comprises: a first substrate and a second substrate that are arranged opposite each other, wherein a display area and a frame area surrounding the display area are provided between the second substrate and the first substrate; a color resistance structure that is located in the frame area on the side of the second substrate facing the first substrate and surrounds the display area, wherein the color resistance structure comprises a first black matrix and a first color resistance portion arranged in a stacked manner; and a plurality of support bars that surround the display area, wherein each of the support bars fills a space between the color resistance structure and the first substrate.
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公开(公告)号：US20230299208A1
公开(公告)日：2023-09-21
申请号：US18322981
申请日：2023-05-24
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Lizhong WANG , Tianmin ZHOU , Hehe HU , Xiaochun XU , Nianqi YAO , Dapeng XUE , Shuilang DONG
IPC: H01L29/786 , H01L27/12 , H01L29/66
CPC classification number: H01L29/7869 , H01L27/1225 , H01L29/66969 , H01L27/127
Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.
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公开(公告)号：US20220367833A1
公开(公告)日：2022-11-17
申请号：US17761600
申请日：2021-05-19
Inventor： Hong LIU , Jingyi XU , Yongqiang ZHANG , Peng LIU , Peirong HUO , Wanzhi CHEN , Xiaochun XU , Jiantao LIU , Bo LI
Abstract: A display substrate and a manufacturing method therefor, and a display device. The display substrate comprises: a substrate, the substrate comprising a blind hole area; a buffer layer covering one side of the substrate; an organic film layer provided on the surface of the buffer layer away from the substrate and having a first opening in the blind hole area; a passivation layer provided on the side of the organic film layer away from the substrate and having a second opening in the blind hole area; and a transparent electrode layer covering the passivation layer and the buffer layer in the second opening.
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公开(公告)号：US20220131009A1
公开(公告)日：2022-04-28
申请号：US17356167
申请日：2021-06-23
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Lizhong WANG , Tianmin ZHOU , Hehe HU , Xiaochun XU , Nianqi YAO , Dapeng XUE , Shuilang DONG
IPC: H01L29/786 , H01L27/12 , H01L29/66
Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.
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