公开(公告)号：US10263092B2

公开(公告)日：2019-04-16

申请号：US15941195

申请日：2018-03-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Haixu Li ,  Zhanfeng Cao ,  Qi Yao ,  Jianguo Wang ,  Dapeng Xue

IPC: H01L29/49 ,  H01L29/45 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

Abstract: A thin film transistor, a method for manufacturing the same, an array substrate and a display device are disclosed. The thin film transistor includes a gate having a gate metal layer on a surface of a substrate; a gate insulating layer on the substrate and covering the gate; an active layer on a surface of the gate insulating layer away from the substrate; a source comprising a source metal layer on a surface of the active layer away from the substrate; and a drain having a drain metal layer on a surface of the active layer away from the substrate, wherein the gate, the source or the drain further includes a metal complex layer on a surface of the gate metal layer, the source metal layer or the drain metal layer away from the substrate.

公开(公告)号：US20180051378A1

公开(公告)日：2018-02-22

申请号：US15534587

申请日：2016-05-25

Applicant: BOE Technology Group Co., Ltd.

Inventor： Dapeng Xue

IPC: C23F1/08 ,  C23F1/46 ,  H01L21/67 ,  H01L21/677

CPC classification number: C23F1/08 ,  C23F1/46 ,  H01L21/6708 ,  H01L21/67253 ,  H01L21/677

Abstract: Embodiments of the present disclosure disclose a wet etching equipment and a wet etching method. The wet etching equipment includes a metal ion concentration adjusting device configured to adjust the concentration of metal ions in an etching solution, a sprinkler which is connected to the metal ion concentration adjusting device and configured to spray the etching solution. Embodiments of the present disclosure also disclose a wet etching method, comprising steps as follows: adjusting a concentration of metal ions in an etching solution so that an etching rate of a metal to be etched is kept stable; spraying the adjusted etching solution onto the metal to be etched.

公开(公告)号：US20170110344A1

公开(公告)日：2017-04-20

申请号：US14906866

申请日：2015-08-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dapeng Xue

IPC: H01L21/67

CPC classification number: H01L21/6708 ,  H01L21/30604 ,  H01L21/67023 ,  H01L21/67173 ,  H01L21/6776

Abstract: The present invention provides a wet etching apparatus. The wet etching apparatus comprises: an etching chamber, comprising an etching chamber inlet at a front end and an etching chamber outlet at a rear end, wherein in the etching chamber, a film to be etched on a substrate is subject to etching with an etching liquid; and a decrystallization device, which washes residual etching liquid or etching liquid crystal formed by the etching liquid at the etching chamber inlet and/or etching chamber outlet with a washing liquid. By means of the decrystallization device, residual etching liquid or etching liquid crystal formed by the etching liquid at the etching chamber inlet and the etching chamber outlet can be effectively removed, thus improving operation ratio and cleanness of the apparatus as well as quality of products.