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公开(公告)号：US20050048874A1
公开(公告)日：2005-03-03
申请号：US10966948
申请日：2004-10-15
IPC分类号： B24B37/005 , B24B37/34 , B24B49/10 , B24B49/00
CPC分类号： B24B37/345 , B24B37/005 , B24B49/105 , G01B7/105 , H01L21/67219 , H01L22/12
摘要： A system includes a measuring station for positioning an eddy current probe proximate to a substrate in a substrate holder. The probe can produce a time-varying magnetic field, in order to induce eddy currents in one or more conductive regions of a substrate either prior to or subsequent to polishing. The eddy current signals are detected, and may be used to update one or more polishing parameters for a chemical mechanical polishing system. The substrate holder may be located in a number places; for example, in a substrate transfer system, a factory interface module, a cleaner, or in a portion of the chemical mechanical polishing system away from the polishing stations. Additional probes may be used.
摘要翻译： 一种系统包括用于将涡流探针靠近衬底保持器中的衬底定位的测量站。 探针可以产生时变磁场，以便在抛光之前或之后在衬底的一个或多个导电区域中引起涡流。 检测涡流信号，并可用于更新化学机械抛光系统的一个或多个抛光参数。 衬底保持器可以位于多个位置; 例如，在基板传送系统，工厂接口模块，清洁器或化学机械抛光系统的远离抛光站的一部分中。 可以使用附加的探针。
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22.发明授权Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations 有权用于化学机械抛光操作的原位终点检测的装置和方法公开(公告)号：US07775852B2
公开(公告)日：2010-08-17
申请号：US11099789
申请日：2005-04-05
申请人： Manoocher Birang , Nils Johansson , Allan Gleason
发明人： Manoocher Birang , Nils Johansson , Allan Gleason
IPC分类号： B24B49/12
CPC分类号： H01L22/12 , B24B37/013 , B24B37/205 , B24B47/12 , B24B49/04 , B24B49/12 , B24B51/00 , G01B11/0683
摘要： An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.
摘要翻译： 使用用于在CMP处理期间原地确定终止该过程的端点的装置的晶片的化学机械抛光（CMP）的装置和方法。 该装置包括能够产生朝向晶片的激光束并检测从晶片反射的光的激光干涉仪，以及邻近通过压板形成的孔布置的窗口。 该窗口在晶片覆盖窗口的至少部分时间内为激光束提供通路。
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23.发明申请公开(公告)号：US20070135958A1
公开(公告)日：2007-06-14
申请号：US11677450
申请日：2007-02-21
IPC分类号： G06F19/00
CPC分类号： B24B37/013 , B24B49/02 , B24B49/10 , B24B49/12 , G01B7/105 , G01B11/0683
摘要： A chemical mechanical polishing apparatus and method can use an eddy current monitoring system and an optical monitoring system. Signals from the monitoring systems can be combined on an output line and extracted by a computer. A thickness of a polishing pad can be calculated. The eddy current monitoring system and optical monitoring system can measure substantially the same location on the substrate.
摘要翻译： 化学机械抛光装置和方法可以使用涡流监测系统和光学监测系统。 来自监控系统的信号可以组合在输出线上并由计算机提取。 可以计算抛光垫的厚度。 涡流监测系统和光学监测系统可以测量基板上基本相同的位置。
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公开(公告)号：US20060246822A1
公开(公告)日：2006-11-02
申请号：US11479299
申请日：2006-06-29
CPC分类号： B24B37/345 , B24B37/005 , B24B49/105 , G01B7/105 , H01L21/67219 , H01L22/12
摘要： A system includes a measuring station for positioning an eddy current probe proximate to a substrate in a substrate holder. The probe can produce a time-varying magnetic field, in order to induce eddy currents in one or more conductive regions of a substrate either prior to or subsequent to polishing. The eddy current signals are detected, and may be used to update one or more polishing parameters for a chemical mechanical polishing system. The substrate holder may be located in a number places; for example, in a substrate transfer system, a factory interface module, a cleaner, or in a portion of the chemical mechanical polishing system away from the polishing stations. Additional probes may be used.
摘要翻译： 一种系统包括用于将涡流探针靠近衬底保持器中的衬底定位的测量站。 探针可以产生时变磁场，以便在抛光之前或之后在衬底的一个或多个导电区域中引起涡流。 检测涡流信号，并可用于更新化学机械抛光系统的一个或多个抛光参数。 衬底保持器可以位于多个位置; 例如，在基板传送系统，工厂接口模块，清洁器或化学机械抛光系统的远离抛光站的一部分中。 可以使用附加的探针。
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公开(公告)号：US07001246B2
公开(公告)日：2006-02-21
申请号：US10447165
申请日：2003-05-27
IPC分类号： B24B49/00
CPC分类号： B24B37/013 , B24B37/205 , B24B49/02 , B24B49/105 , B24B49/12 , G01B7/105
摘要： A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.
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26.发明申请公开(公告)号：US20050170751A1
公开(公告)日：2005-08-04
申请号：US11099789
申请日：2005-04-05
申请人： Manoocher Birang , Nils Johansson , Allan Gleason
发明人： Manoocher Birang , Nils Johansson , Allan Gleason
IPC分类号： B24B37/04 , B24B47/12 , B24B49/04 , B24B49/12 , B24B51/00 , B24D7/12 , B24D13/14 , G01B11/06 , B24B49/00
CPC分类号： H01L22/12 , B24B37/013 , B24B37/205 , B24B47/12 , B24B49/04 , B24B49/12 , B24B51/00 , G01B11/0683
摘要： An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.
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27.发明授权公开(公告)号：US06719818B1
公开(公告)日：2004-04-13
申请号：US09028412
申请日：1998-02-24
申请人： Manoocher Birang , Nils Johansson , Allan Gleason
发明人： Manoocher Birang , Nils Johansson , Allan Gleason
IPC分类号： B24B100
CPC分类号： B24B37/205 , B24B37/013 , B24B37/22 , B24B49/12 , B24D7/12 , Y10T428/24273 , Y10T428/24289 , Y10T428/249978
摘要： An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.
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28.发明授权Method for in-situ endpoint detection for chemical mechanical polishing operations 有权化学机械抛光操作的原位终点检测方法公开(公告)号：US06537133B1
公开(公告)日：2003-03-25
申请号：US09672549
申请日：2000-09-28
申请人： Manoocher Birang , Nils Johansson , Allan Gleason
发明人： Manoocher Birang , Nils Johansson , Allan Gleason
IPC分类号： B24B4900
CPC分类号： B24B47/12 , B24B37/013 , B24B37/205 , B24B49/04 , B24B49/12 , B24B51/00 , G01B11/0683
摘要： An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.
摘要翻译： 使用用于在CMP处理期间原地确定终止该过程的端点的装置的晶片的化学机械抛光（CMP）的装置和方法。 该装置包括能够产生朝向晶片的激光束并检测从晶片反射的光的激光干涉仪，以及邻近通过压板形成的孔布置的窗口。 该窗口在晶片覆盖窗口的至少部分时间内为激光束提供通路。
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29.发明申请公开(公告)号：US20060009128A1
公开(公告)日：2006-01-12
申请号：US11218977
申请日：2005-09-01
IPC分类号： B24B49/00
CPC分类号： B24B37/013 , B24B37/205 , B24B49/02 , B24B49/105 , B24B49/12 , G01B7/105
摘要： A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.
摘要翻译： 用于在化学机械抛光期间监测衬底中的导电膜的传感器产生撞击衬底并引起涡流的交变磁场。 传感器可以具有芯，围绕芯的第一部分缠绕的第一线圈和缠绕在芯的第二部分上的第二线圈。 传感器可以位于与衬底相对的抛光表面的一侧。 传感器可以检测到驱动信号和测量信号之间的相位差。
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30.发明授权Method for monitoring a metal layer during chemical mechanical polishing using a phase difference signal 有权使用相位差信号在化学机械抛光期间监测金属层的方法公开(公告)号：US06930478B2
公开(公告)日：2005-08-16
申请号：US10446550
申请日：2003-05-27
CPC分类号： B24B37/013 , B24B37/205 , B24B49/02 , B24B49/105 , B24B49/12 , G01B7/105
摘要： A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.
摘要翻译： 用于在化学机械抛光期间监测衬底中的导电膜的传感器产生撞击衬底并引起涡流的交变磁场。 传感器可以具有芯，围绕芯的第一部分缠绕的第一线圈和缠绕在芯的第二部分上的第二线圈。 传感器可以位于与衬底相对的抛光表面的一侧。 传感器可以检测到驱动信号和测量信号之间的相位差。
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