High impedance surface
    21.
    发明授权
    High impedance surface 有权
    高阻抗表面

    公开(公告)号:US08842055B2

    公开(公告)日:2014-09-23

    申请号:US13116885

    申请日:2011-05-26

    摘要: An apparatus for emitting radiation is provided. The apparatus comprises an antenna formed on a substrate, and a high impedance surface (HIS). The HIS has a plurality of cells formed on the substrate that are arranged to form an array that substantially surrounds at least a portion of the antenna. Each cell generally includes a ground plane, first plate, second plate, and an interconnect. The ground plane is formed on the substrate, while the first plate (which is substantially rectangular) is formed over and coupled to the ground plane. The first plate for each cell is also arranged so as to form a first checkered pattern for the array. The second plate (which is substantially rectangular) is formed over and is substantially parallel to the first plate. The first and second plates are also substantially aligned with a central axis that extends generally perpendicular to the first and second plates hand have a interconnect formed therebetween. The second plate for each cell is also arranged so as to form a second checkered pattern for the array.

    摘要翻译: 提供了一种用于发射辐射的装置。 该装置包括形成在基板上的天线和高阻抗表面(HIS)。 HIS具有形成在基板上的多个单元,其被布置成形成基本上围绕天线的至少一部分的阵列。 每个单元通常包括接地平面,第一板,第二板和互连。 接地平面形成在基板上,而第一板(其基本上是矩形的)形成在接地平面上并耦合到接地平面。 每个单元的第一板也被布置成形成阵列的第一格子图案。 第二板(其基本上是矩形的)形成在第一板上方并且基本上平行于第一板。 第一和第二板也基本上与大致垂直于第一和第二板延伸的中心轴对准,手具有形成在它们之间的互连。 每个单元的第二板也被布置成形成用于阵列的第二方格图案。

    LOOP ANTENNA
    22.
    发明申请
    LOOP ANTENNA 有权
    LOOP天线

    公开(公告)号:US20130021208A1

    公开(公告)日:2013-01-24

    申请号:US13189135

    申请日:2011-07-22

    IPC分类号: H01Q1/38

    CPC分类号: H01Q7/00 H01Q23/00

    摘要: A loop antenna is provided. The apparatus comprises a substrate, a first metallization layer, and a second metallization layer. The substrate has first and second feed terminals and a ground terminal. The first metallization layer is disposed over the substrate and includes a first window conductive region, a first conductive region, a second conductive region, and a third conductive region. The first conductive region is disposed over and is in electrical contact with the first feed terminal; it is also is substantially circular and located within the first window region. The second conductive region is disposed over and is in electrical contact with the second feed terminal; it is also substantially circular and is located within the first window region. The a third conductive region is disposed over and is in electrical contact with the ground terminal, and the third conductive region substantially surrounds the first window region. The second metallization layer is disposed over and is in electrical contact with the first, second, and third conductive regions of the first metallization layer, and the second metallization layer includes a second window region that is at least partially aligned with the first window region.

    摘要翻译: 提供环形天线。 该装置包括基底,第一金属化层和第二金属化层。 基板具有第一和第二馈电端子和接地端子。 第一金属化层设置在衬底上,并且包括第一窗口导电区域,第一导电区域,第二导电区域和第三导电区域。 第一导电区域设置在第一馈电端子上并与第一馈电端子电接触; 它也是基本圆形的并且位于第一窗口区域内。 第二导电区域设置在第二馈电端子上并与第二馈电端子电接触; 它也基本上是圆形的并且位于第一窗口区域内。 第三导电区域设置在接地端子之上并与接地端子电接触,并且第三导电区域基本上围绕第一窗口区域。 第二金属化层设置在第一金属化层的第一,第二和第三导电区域之上并与第一金属化层的第一,第二和第三导电区域电接触,并且第二金属化层包括至少部分地与第一窗口区域对准的第二窗口区域。

    HIGH IMPEDANCE SURFACE
    23.
    发明申请
    HIGH IMPEDANCE SURFACE 有权
    高阻抗表面

    公开(公告)号:US20120299797A1

    公开(公告)日:2012-11-29

    申请号:US13116885

    申请日:2011-05-26

    IPC分类号: H01Q21/00 H01Q1/00

    摘要: An apparatus for emitting radiation is provided. The apparatus comprises an antenna formed on a substrate, and a high impedance surface (HIS). The HIS has a plurality of cells formed on the substrate that are arranged to form an array that substantially surrounds at least a portion of the antenna. Each cell generally includes a ground plane, first plate, second plate, and an interconnect. The ground plane is formed on the substrate, while the first plate (which is substantially rectangular) is formed over and coupled to the ground plane. The first plate for each cell is also arranged so as to form a first checkered pattern for the array. The second plate (which is substantially rectangular) is formed over and is substantially parallel to the first plate. The first and second plates are also substantially aligned with a central axis that extends generally perpendicular to the first and second plates hand have a interconnect formed therebetween. The second plate for each cell is also arranged so as to form a second checkered pattern for the array.

    摘要翻译: 提供了一种用于发射辐射的装置。 该装置包括形成在基板上的天线和高阻抗表面(HIS)。 HIS具有形成在基板上的多个单元,其被布置成形成基本上围绕天线的至少一部分的阵列。 每个单元通常包括接地平面,第一板,第二板和互连。 接地平面形成在基板上,而第一板(其基本上是矩形的)形成在接地平面上并耦合到接地平面。 每个单元的第一板也被布置成形成阵列的第一格子图案。 第二板(其基本上是矩形的)形成在第一板上方并且基本上平行于第一板。 第一和第二板也基本上与大致垂直于第一和第二板延伸的中心轴对准,手具有形成在它们之间的互连。 每个单元的第二板也被布置成形成用于阵列的第二方格图案。

    Correcting for non-linearities in a continuous-time sigma-delta modulator
    24.
    发明授权
    Correcting for non-linearities in a continuous-time sigma-delta modulator 有权
    校正连续时间Σ-Δ调制器中的非线性

    公开(公告)号:US08519873B2

    公开(公告)日:2013-08-27

    申请号:US13229434

    申请日:2011-09-09

    IPC分类号: H03M1/06

    CPC分类号: H03M3/354 H03M3/454 H03M3/464

    摘要: In higher order sigma-delta modulators (SDMs), there are oftentimes errors introduced by the digital-to-analog (DAC) switches. Namely, parasitic capacitances associated with switches can introduce second harmonic spurs. Here, however, compensation circuits and buffers are provided. The buffers bias the switches in saturation, and the compensation circuits provide a “ground boost” for the buffers. The combination of the buffer and compensation circuit reduces the second harmonic spur, while also improving the Signal-to-Noise Ratio (SNR) and Signal-to-Noise-plus-Distortion Ratio (SNDR).

    摘要翻译: 在高阶Σ-Δ调制器(SDM)中,通常由数模转换器(DAC)引入误差。 即,与开关相关的寄生电容可以引入二次谐波杂散。 然而,这里提供补偿电路和缓冲器。 缓冲器将开关偏置在饱和状态,补偿电路为缓冲器提供“接地提升”。 缓冲器和补偿电路的组合减少了二次谐波杂散,同时也提高了信噪比(SNR)和信噪比加失真比(SNDR)。

    CORRECTING FOR NON-LINEARITIES IN A CONTINUOUS-TIME SIGMA-DELTA MODULATOR
    25.
    发明申请
    CORRECTING FOR NON-LINEARITIES IN A CONTINUOUS-TIME SIGMA-DELTA MODULATOR 有权
    在连续时间信号调制器中校正非线性

    公开(公告)号:US20130063289A1

    公开(公告)日:2013-03-14

    申请号:US13229434

    申请日:2011-09-09

    IPC分类号: H03M1/06

    CPC分类号: H03M3/354 H03M3/454 H03M3/464

    摘要: In higher order sigma-delta modulators (SDMs), there are oftentimes errors introduced by the digital-to-analog (DAC) switches. Namely, parasitic capacitances associated with switches can introduce second harmonic spurs. Here, however, compensation circuits and buffers are provided. The buffers bias the switches in saturation, and the compensation circuits provide a “ground boost” for the buffers. The combination of the buffer and compensation circuit reduces the second harmonic spur, while also improving the Signal-to-Noise Ratio (SNR) and Signal-to-Noise-plus-Distortion Ratio (SNDR).

    摘要翻译: 在高阶Σ-Δ调制器(SDM)中,通常由数模转换器(DAC)引入误差。 即,与开关相关的寄生电容可以引入二次谐波杂散。 然而,这里提供补偿电路和缓冲器。 缓冲器将开关偏置在饱和状态,补偿电路为缓冲器提供接地提升。 缓冲器和补偿电路的组合减少了二次谐波杂散,同时也提高了信噪比(SNR)和信噪比加失真比(SNDR)。