公开(公告)号：US07224427B2

公开(公告)日：2007-05-29

申请号：US10910480

申请日：2004-08-03

申请人： Ching-Yu Chang ,  Chien-Hung Lin ,  Chin-Hsiang Lin ,  David Lu ,  Horng-Huei Tseng ,  Burn-Jeng Lin

发明人： Ching-Yu Chang ,  Chien-Hung Lin ,  Chin-Hsiang Lin ,  David Lu ,  Horng-Huei Tseng ,  Burn-Jeng Lin

IPC分类号： G03B27/52

CPC分类号： G03F7/70341

摘要： A megasonic immersion lithography exposure apparatus and method for substantially eliminating microbubbles from an exposure liquid in immersion lithography is disclosed. The apparatus includes an optical system for projecting light through a mask and onto a wafer.An optical transfer chamber is provided adjacent to the optical system for containing an exposure liquid. At least one megasonic plate operably engages the optical transfer chamber for inducing sonic waves in and eliminating microbubbles from the exposure liquid.

摘要翻译： 公开了一种用于在浸没式光刻中基本上消除曝光液体中的微泡的兆声浸没式光刻曝光装置和方法。 该装置包括用于通过掩模将光投射到晶片上的光学系统。 光学传递室邻近光学系统设置，用于容纳曝光液体。 至少一个兆欧表板可操作地接合光学传递室，用于在曝光液体中引入声波并消除微泡。

公开(公告)号：US20120038894A1

公开(公告)日：2012-02-16

申请号：US13282745

申请日：2011-10-27

申请人： Burn-Jeng Lin ,  David Lu

发明人： Burn-Jeng Lin ,  David Lu

IPC分类号： G03B27/52

CPC分类号： G03F7/70341

摘要： A lens cleaning module for a lithography system having an exposure apparatus including an objective lens is disclosed. The lens cleaning module includes a scanning stage for supporting a wafer beneath the objective lens. A cleaning module is provided adjacent to the scanning stage for cleaning the objective lens in a non-manual cleaning process.

摘要翻译： 公开了一种具有包括物镜的曝光装置的光刻系统的透镜清洁模块。 透镜清洁模块包括用于在物镜下方支撑晶片的扫描台。 在非手动清洁过程中，用于在扫描台附近设置清洁模块以清洁物镜。

公开(公告)号：US08054444B2

公开(公告)日：2011-11-08

申请号：US11222319

申请日：2005-09-07

申请人： Burn-Jeng Lin ,  David Lu

发明人： Burn-Jeng Lin ,  David Lu

IPC分类号： G03B27/52

CPC分类号： G03F7/70341

摘要： A lens cleaning module for a lithography system having an exposure apparatus including an objective lens is provided. The lens cleaning module includes a scanning stage for supporting a wafer beneath the objective lens. A cleaning module is provided adjacent to the scanning stage for cleaning the objective lens in a non-manual cleaning process.

摘要翻译： 提供一种具有包括物镜的曝光装置的光刻系统的透镜清洁模块。 透镜清洁模块包括用于在物镜下方支撑晶片的扫描台。 在非手动清洁过程中，用于在扫描台附近设置清洁模块以清洁物镜。

公开(公告)号：US20100177289A1

公开(公告)日：2010-07-15

申请号：US12731752

申请日：2010-03-25

申请人： Yee-Chia Yeo ,  Burn-Jeng Lin ,  Chenming Hu

发明人： Yee-Chia Yeo ,  Burn-Jeng Lin ,  Chenming Hu

IPC分类号： G03B27/52

CPC分类号： G03F7/70341

摘要： An immersion lithographic system 10 comprises an optical surface 51, an immersion fluid 60 with a pH less than 7 contacting at least a portion of the optical surface, and a semiconductor structure 80 having a topmost photoresist layer 70 wherein a portion of the photoresist is in contact with the immersion fluid. Further, a method for illuminating a semiconductor structure 80 having a topmost photoresist layer 70 comprising the steps of: introducing an immersion fluid 60 into a space between an optical surface 51 and the photoresist layer wherein the immersion fluid has a pH of less than 7, and directing light preferably with a wavelength of less than 450 nm through the immersion fluid and onto the photoresist.

摘要翻译： 浸没式光刻系统10包括光学表面51，具有与光学表面的至少一部分接触的pH小于7的浸没流体60以及具有最高光致抗蚀剂层70的半导体结构80，其中光致抗蚀剂的一部分在 与浸液接触。 此外，一种用于照射具有最高光致抗蚀剂层70的半导体结构80的方法，包括以下步骤：将浸没流体60引入到光学表面51和光致抗蚀剂层之间的空间中，其中浸没流体的pH小于7， 并且通过浸渍流体优选将波长小于450nm的光引导到光致抗蚀剂上。

公开(公告)号：US07700267B2

公开(公告)日：2010-04-20

申请号：US10803712

申请日：2004-03-18

申请人： Yee-Chia Yeo ,  Burn-Jeng Lin ,  Chenming Hu

发明人： Yee-Chia Yeo ,  Burn-Jeng Lin ,  Chenming Hu

IPC分类号： G03F7/26

CPC分类号： G03F7/70341

摘要： An immersion lithographic system 10 comprises an optical surface 51, an immersion fluid 60 with a pH less than 7 contacting at least a portion of the optical surface, and a semiconductor structure 80 having a topmost photoresist layer 70 wherein a portion of the photoresist is in contact with the immersion fluid. Further, a method for illuminating a semiconductor structure 80 having a topmost photoresist layer 70 comprising the steps of: introducing an immersion fluid 60 into a space between an optical surface 51 and the photoresist layer wherein the immersion fluid has a pH of less than 7, and directing light preferably with a wavelength of less than 450 nm through the immersion fluid and onto the photoresist.

摘要翻译： 浸没式光刻系统10包括光学表面51，具有与光学表面的至少一部分接触的pH小于7的浸没流体60以及具有最高光致抗蚀剂层70的半导体结构80，其中光致抗蚀剂的一部分在 与浸液接触。 此外，一种用于照射具有最高光致抗蚀剂层70的半导体结构80的方法，包括以下步骤：将浸没流体60引入到光学表面51和光致抗蚀剂层之间的空间中，其中浸没流体的pH小于7， 并且通过浸渍流体优选将波长小于450nm的光引导到光致抗蚀剂上。

公开(公告)号：US20050036183A1

公开(公告)日：2005-02-17

申请号：US10803712

申请日：2004-03-18

申请人： Yee-Chia Yeo ,  Burn-Jeng Lin ,  Chenming Hu

发明人： Yee-Chia Yeo ,  Burn-Jeng Lin ,  Chenming Hu

IPC分类号： G03F7/20 ,  G02B5/32

CPC分类号： G03F7/70341

摘要： An immersion lithographic system 10 comprises an optical surface 51, an immersion fluid 60 with a pH less than 7 contacting at least a portion of the optical surface, and a semiconductor structure 80 having a topmost photoresist layer 70 wherein a portion of the photoresist is in contact with the immersion fluid. Further, a method for illuminating a semiconductor structure 80 having a topmost photoresist layer 70 comprising the steps of: introducing an immersion fluid 60 into a space between an optical surface 51 and the photoresist layer wherein the immersion fluid has a pH of less than 7, and directing light preferably with a wavelength of less than 450 nm through the immersion fluid and onto the photoresist.

摘要翻译： 浸没式光刻系统10包括光学表面51，具有与光学表面的至少一部分接触的pH小于7的浸没流体60以及具有最高光致抗蚀剂层70的半导体结构80，其中光致抗蚀剂的一部分在 与浸液接触。 此外，一种用于照射具有最高光致抗蚀剂层70的半导体结构80的方法，包括以下步骤：将浸没流体60引入到光学表面51和光致抗蚀剂层之间的空间中，其中浸没流体的pH小于7， 并且通过浸渍流体优选将波长小于450nm的光引导到光致抗蚀剂上。

公开(公告)号：US08693115B2

公开(公告)日：2014-04-08

申请号：US13176604

申请日：2011-07-05

申请人： Burn-Jeng Lin

发明人： Burn-Jeng Lin

IPC分类号： G02B7/02

CPC分类号： G02B7/028 ,  G02B7/04 ,  G03F7/70341

摘要： An apparatus for immersion lithography that includes an imaging lens which has a front surface, a fluid-containing wafer stage for supporting a wafer that has a top surface to be exposed positioned spaced-apart and juxtaposed to the front surface of the imaging lens, and a fluid that has a refractive index between about 1.0 and about 2.0 filling a gap formed in-between the front surface of the imaging lens and the top surface of the wafer. A method for immersion lithography can be carried out by flowing a fluid through a gap formed in-between the front surface of an imaging lens and a top surface of a wafer. The flow rate and temperature of the fluid can be controlled while particulate contaminants are filtered out by a filtering device.

摘要翻译： 一种用于浸没式光刻的装置，其包括具有前表面的成像透镜，用于支撑晶片的含流体的晶片台，所述晶片载台具有被间隔开并与所述成像透镜的前表面并置的待暴露的顶表面;以及 具有约1.0至约2.0的折射率的流体填充在成像透镜的前表面和晶片的顶表面之间形成的间隙。 可以通过使流体流过形成在成像透镜的前表面和晶片的顶表面之间的间隙来进行浸没式光刻的方法。 可以控制流体的流速和温度，同时通过过滤装置将颗粒污染物过滤掉。

公开(公告)号：US08659843B2

公开(公告)日：2014-02-25

申请号：US13176587

申请日：2011-07-05

申请人： Burn-Jeng Lin

发明人： Burn-Jeng Lin

IPC分类号： G02B7/02 ,  G02B7/04

CPC分类号： G02B7/028 ,  G02B7/04 ,  G03F7/70341

摘要： An apparatus for immersion lithography that includes an imaging lens which has a front surface, a fluid-containing wafer stage for supporting a wafer that has a top surface to be exposed positioned spaced-apart and juxtaposed to the front surface of the imaging lens, and a fluid that has a refractive index between about 1.0 and about 2.0 filling a gap formed in-between the front surface of the imaging lens and the top surface of the wafer. A method for immersion lithography can be carried out by flowing a fluid through a gap formed in-between the front surface of an imaging lens and a top surface of a wafer. The flow rate and temperature of the fluid can be controlled while particulate contaminants are filtered out by a filtering device.

公开(公告)号：US07384726B2

公开(公告)日：2008-06-10

申请号：US11043598

申请日：2005-01-25

申请人： Burn-Jeng Lin ,  Ching-Yu Chang

发明人： Burn-Jeng Lin ,  Ching-Yu Chang

IPC分类号： G03F7/00

CPC分类号： G03F7/40 ,  G03F7/2024

摘要： A method, tool, and machine for hardening a photoresist image while the photoresist image is immersed in a liquid.

摘要翻译： 一种用于在光致抗蚀剂图像浸入液体中时使光致抗蚀剂图像硬化的方法，工具和机器。

公开(公告)号：US20070264598A1

公开(公告)日：2007-11-15

申请号：US11416263

申请日：2006-05-01

申请人： Ching-Yu Chang ,  Burn-Jeng Lin ,  Chin-Hsiang Lin

发明人： Ching-Yu Chang ,  Burn-Jeng Lin ,  Chin-Hsiang Lin

IPC分类号： G03F7/20

CPC分类号： G03F7/38 ,  G03F7/095

摘要： A process of forming a fine pattern including forming a first photoresist layer over a first layer of a semiconductor device. Portions of the first photoresist layer are exposed causing a photochemical reaction therein. Prior to developing the first photoresist layer, a second photoresist layer is formed over the first photoresist layer, and wherein at least one of the first photoresist layer and second photoresist layer comprises a photo base generator.

摘要翻译： 一种形成精细图案的方法，包括在半导体器件的第一层上形成第一光致抗蚀剂层。 暴露第一光致抗蚀剂层的部分，导致其中的光化学反应。 在显影第一光致抗蚀剂层之前，在第一光致抗蚀剂层之上形成第二光致抗蚀剂层，并且其中第一光致抗蚀剂层和第二光致抗蚀剂层中的至少一个包括光源发生器。