摘要:
A thin-film transistor substrate includes a substrate; an underlying metal film disposed on the substrate, the underlying metal film being formed of a metal capable of being electrically connected to an indium tin oxide film used to form a gate terminal, a source terminal, and a pixel electrode; an aluminum film used to form a gate interconnection, a source interconnection, and a drain electrode, the aluminum film being disposed on the underlying metal film; an aluminum oxide film disposed on the aluminum film; an insulating film disposed on the aluminum oxide film; a contact hole formed in the insulating film, the aluminum oxide film, and the aluminum film, the contact hole extending from the surface of the insulating film to the surface of the underlying metal film through the insulating film, the aluminum oxide film, and the aluminum film; and an indium tin oxide film formed on the insulating film and in the contact hole, the indium tin oxide film in the contact hole being electrically connected to the underlying metal film. In this thin-film transistor substrate, low-resistance interconnections are formed using aluminum without causing an increase in electric resistance due to direct contact between aluminum and ITO. Furthermore, short circuits and poor electric isolation due to hillocks are prevented.
摘要:
A liquid crystal display apparatus comprises: a substrate; gate wires and source wires formed in a matrix fashion on the substrate; gate electrodes formed close to points of intersection between the gate wires and the source wires, the gate electrodes being connected electrically to the gate wires; a first insulating film formed on the gate wires and the gate electrodes, the first insulating film further carrying the source wires thereon; a semiconductor active film formed over the gate electrodes with the first insulating film interposed therebetween; source electrodes formed on the semiconductor active film and connected to the source wires; drain electrodes formed on the semiconductor active film and isolated from the source electrodes; an electrode film intended to generate capacity and formed on the first insulating film, the electrode film being close to and in parallel with at least the source wires; a second insulating film formed on the first insulating film which carries the electrode film, the source wires, the source electrodes, the drain electrodes and the semiconductor active film thereon; and pixel electrodes connected to the drain electrodes and formed on the second insulating film in order to generate capacity in cooperation with the electrode film.
摘要:
A liquid crystal display element of the present invention is prepared according to a top-gate structure in which a gate electrode is formed on a semiconductor film. The liquid crystal display element is provided with a first substrate and a second substrate each having an orientation film. A plurality of linear electrodes are formed on the first substrate so as to apply a voltage between the electrodes. The orientation film of the first substrate is oriented in parallel with the longitudinal direction of the linear electrodes.
摘要:
There are provided a thin film transistor liquid crystal display device in which an aluminum layer and an ITO layer can be connected with simplicity and certainty and a fabricating process therefor.A thin film transistor liquid crystal display device comprising: a pair of substrates; a liquid crystal sandwiched therebetween; an aluminum layer formed on a surface in which the liquid crystal is held, of one substrate; an insulating layer covering the aluminum layer; a contact hole formed in the insulating layer so as to reach the aluminum layer; an indium tin oxide layer formed on the insulating layer including the inner surface of the contact hole; and a silicide layer lying between the indium tin oxide layer and the aluminum layer.
摘要:
A liquid-crystal display device having liquid crystal provided between a pair of opposed substrates includes a common electrode formed on a surface of one substrate facing the liquid crystal; surrounding electrodes formed on a surface of the other substrate facing the liquid crystal, the surrounding electrodes provided for defining a plurality of pixel regions, to which surrounding electrodes a potential equal to that of the common electrode is applied; intermediate electrodes formed on the surface of the other substrate, the intermediate electrodes provided for bisecting each pixel region; pixel electrodes formed on the surface of the other substrate for the pixel regions, to which pixel electrodes a potential equal to that of the intermediate electrodes is applied; and gaps formed on the pixel electrodes along the direction in which the intermediate electrodes are arranged, each gap provided for bisecting each pixel electrode in accordance with the width of each intermediate electrode.