公开(公告)号：US20090029500A1

公开(公告)日：2009-01-29

申请号：US12101957

申请日：2008-06-08

Applicant: Chang-Feng Wan

Inventor： Chang-Feng Wan

IPC: H01L21/50 ,  B81C1/00

CPC classification number: B81C1/00269 ,  H01L2924/16235 ,  Y10T156/1052

Abstract: An embodiment of the present invention provides a method of manufacturing hermetic packaging for devices on a substrate wafer, comprising forming a plurality of adhesive rings on a cap wafer or the substrate wafer, bonding the cap wafer to the substrate wafer with an adhesive layer, forming trenches in the cap wafer and the adhesive rings along outer rim of the adhesive rings, and covering sidewall of the trenches by at least one deposited film to provide a diffusion barrier to moisture or gas.

Abstract translation: 本发明的一个实施例提供了一种制造衬底晶片上器件的密封封装的方法，包括在盖晶片或衬底晶片上形成多个粘合环，将盖晶片与粘合剂层接合，形成 盖晶片中的沟槽和沿着粘合环的外边缘的粘合剂环，并且通过至少一个沉积膜覆盖沟槽的侧壁以提供对湿气或气体的扩散阻挡。

公开(公告)号：US20050017313A1

公开(公告)日：2005-01-27

申请号：US10712196

申请日：2003-11-13

Applicant: Chang-Feng Wan

Inventor： Chang-Feng Wan

IPC: B81B7/00 ,  B81C1/00 ,  G01L9/00 ,  H01L21/00 ,  H01L21/44 ,  H01L21/46 ,  H01L21/48 ,  H01L29/82

CPC classification number: G01L9/0042 ,  B81B2201/0264 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2203/0384 ,  B81B2207/07 ,  B81C1/00095 ,  B81C1/00285 ,  B81C1/00333 ,  B81C2201/019 ,  H01G5/16 ,  H01G5/40 ,  H01L29/82

Abstract: A system and method for manufacturing micro cavities at the wafer level using a unique, innovative MEMS (MicroElectroMechanical Systems) process, wherein micro cavities are formed, with epoxy bonded single-crystalline silicon membrane as cap and deposited and/or electroplated metal as sidewall, on substrate wafers. The epoxy is also the sacrificial layer. It is totally removed from within the cavity through small etch access holes etched in the silicon cap before the etch access holes are sealed under vacuum. The micro cavities manufactured therein can be used as pressure sensors or for packaging MEMS devices under vacuum or inert environment. In addition, the silicon membrane manufactured therein can be used to manufacture RF switches.

Abstract translation: 一种使用独特的创新MEMS（微电子机械系统）工艺在晶片级制造微腔的系统和方法，其中形成微腔，其中环氧键合单晶硅膜作为盖并且沉积和/或电镀金属作为侧壁， 在衬底晶圆上。 环氧树脂也是牺牲层。 在蚀刻访问孔在真空下密封之前，通过蚀刻在硅帽中的小蚀刻访问孔，完全从腔内移除。 其中制造的微孔可用作压力传感器或用于在真空或惰性环境下包装MEMS器件。 此外，其中制造的硅膜可以用于制造RF开关。

公开(公告)号：US06538296B1

公开(公告)日：2003-03-25

申请号：US09461018

申请日：1999-12-15

Applicant: Chang-Feng Wan

Inventor： Chang-Feng Wan

IPC: H01L2982

CPC classification number: B81C1/0019 ,  B81C2201/0108 ,  B81C2201/019

Abstract: A micro-electro-mechanical device and method of manufacture therefore with a suspended structure formed from mono-crystalline silicon, bonded to a substrate wafer with an organic adhesive layer serving as support and spacer and the rest of the organic adhesive layer serving as a sacrificial layer, which is removed by a dry etch means. Said substrate wafer may contain integrated circuits for sensing and controlling the device.

Abstract translation: 因此，微机电装置及其制造方法由具有由单晶硅形成的悬置结构的方式制成，其结合到具有有机粘合剂层作为支撑和间隔物的衬底晶片上，其余的有机粘合层用作牺牲 层，其通过干蚀刻装置除去。 所述衬底晶片可以包含用于感测和控制该器件的集成电路。

公开(公告)号：US6060336A

公开(公告)日：2000-05-09

申请号：US211486

申请日：1998-12-11

Applicant: Chang-Feng Wan

Inventor： Chang-Feng Wan

IPC: B81B3/00 ,  H01L21/00 ,  B24B1/00 ,  H01L21/302 ,  H01L21/461 ,  H01L29/82

CPC classification number: B81C1/0019 ,  B81C2201/0108 ,  B81C2201/019

Abstract: A micro-electro-mechanical device and method of manufacture therefore with a suspended structure formed from mono-crystalline silicon, bonded to a substrate wafer with an organic adhesive layer serving as support and spacer and the rest of the organic adhesive layer serving as a sacrificial layer, which is removed by a dry etch means. Said substrate wafer may contain integrated circuits for sensing and controlling the device.

公开(公告)号：US4807004A

公开(公告)日：1989-02-21

申请号：US935664

申请日：1986-11-26

Applicant: Chang-Feng Wan ,  Yingsheng Tung ,  Steven N. Frank

Inventor： Chang-Feng Wan ,  Yingsheng Tung ,  Steven N. Frank

IPC: H01L29/423 ,  H01L29/768 ,  H01L31/18 ,  H01L29/78

CPC classification number: H01L29/76883 ,  H01L29/42396 ,  H01L31/1884 ,  Y02E10/50

Abstract: A novel process for fabricating a CCD imager arrray (10) having a tin oxide electrode monolayer (18) is disclosed. The process includes a low pressure chemical vapor deposition step using tetramethyltin and oxygen, and an ion implantation step that increased conductivity of the tin oxide electrodes to as high as 700 ohm.sup.-1 cm.sup.-1.

Abstract translation: 公开了一种用于制造具有氧化锡电极单层（18）的CCD成像器装置（10）的新颖方法。 该方法包括使用四甲基锡和氧气的低压化学气相沉积步骤，以及将氧化锡电极的导电率提高到高达700欧姆 - 1厘米-1的离子注入步骤。

公开(公告)号：US4567849A

公开(公告)日：1986-02-04

申请号：US607484

申请日：1984-05-07

Applicant: Chang-Feng Wan

Inventor： Chang-Feng Wan

IPC: C30B19/02 ,  B05C3/10 ,  H01L21/208

CPC classification number: C30B19/02 ,  C30B29/48

Abstract: For HgCdTe liquid phase epitaxy (LPE), in situ differential thermal analysis apparatus is used to precisely monitor the liquidus temperature of each HgCdTe melt. The neutral body, e.g. a slug of copper enclosed in a silica ampoule, is placed near the LPE reactor in a furnace. During heating or cooling, differential sensing of a pair of thermocouples (in the melt and in the neutral body) will show an accelerated change at transformation points, since at these points the temperature of the melt will be changed by the energy of the physical change, while that of the neutral body remains subject only to passive heat transfer. Thus, the actual liquidus temperature of each melt can be measured with extreme precision, and isothermal or programmed cooling methods of LPE can be precisely and reliably controlled under production conditions.

Abstract translation: 对于HgCdTe液相外延（LPE），使用原位差分热分析仪器精确监测每个HgCdTe熔体的液相线温度。 中性体，例如 将封闭在二氧化硅安瓿中的铜块放置在炉中的LPE反应器附近。 在加热或冷却过程中，一对热电偶（在熔体和中性体中）的差分感应将在相变点显示加速变化，因为在这些点上，熔体的温度将被物理变化的能量所改变 ，而中性身体的物体仍然只受到被动热传递。 因此，可以极精度地测量每个熔体的实际液相线温度，并且可以在生产条件下精确可靠地控制LPE的等温或程序冷却方法。