公开(公告)号：US20050205865A1

公开(公告)日：2005-09-22

申请号：US10804374

申请日：2004-03-19

申请人： Hang-Dony Kuan ,  Yingsheng Tung

发明人： Hang-Dony Kuan ,  Yingsheng Tung

IPC分类号： G01R1/073 ,  G01R31/02 ,  H01L23/58

CPC分类号： H01L22/32 ,  G01R1/07371

摘要： Methods, devices, and systems of the invention provide improved semiconductor device testing with firm tester-to-device interface and increased contact area. A test probe (24, 58) associated with ATE (18) is configured to substantially correspond to a probe receptacle (38) of a test board (16) or semiconductor device (10). Upon insertion of the test probe (24, 58) into the probe receptacle (38), areas of staunch electrical contact (34) between the probe receptacle (38) and probe (24, 58) facilitate measuring an electrical signal.

摘要翻译： 本发明的方法，装置和系统提供改进的半导体器件测试，具有牢固的测试器到器件接口和增加的接触面积。 与ATE（18）相关联的测试探针（24,58）被配置为基本对应于测试板（16）或半导体器件（10）的探针插座（38）。 在将测试探针（24,58）插入探针插座（38）中之后，探针插座（38）和探头（24,58）之间的牢固电接触区域（34）便于测量电信号。

公开(公告)号：US5248632A

公开(公告)日：1993-09-28

申请号：US953641

申请日：1992-09-29

申请人： Yingsheng Tung ,  Scott Montgomery

发明人： Yingsheng Tung ,  Scott Montgomery

IPC分类号： H01L23/525

CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  Y10S148/055

摘要： An antifuse (42) is formed by forming a layer of titanium tungsten (34) overlying a portion of a first metal layer (28). The titanium tungsten layer (34) is oxidized to form a film of oxide (36) on its surface. Insulating regions (30) are formed adjacent the titanium tungsten layer (34) and overlying the first metal layer (28). A second metal layer (40) is formed overlying the titanium tungsten layer (34). Applying a break down voltage across the first and second metal layers (28), (40) will break down the oxide film (36), thereby causing a connection between the first and second metal layers (28), (40).

摘要翻译： 通过形成覆盖在第一金属层（28）的一部分上的钛钨层（34）形成反熔丝（42）。 钛钨层（34）被氧化以在其表面上形成氧化物膜（36）。 绝缘区域（30）形成在钛钨层（34）附近并覆盖第一金属层（28）。 覆盖钛钨层（34）上的第二金属层（40）形成。 在第一和第二金属层（28），（40）上施加击穿电压将会分解氧化膜（36），从而导致第一和第二金属层（28），（40）之间的连接。

公开(公告)号：US4807004A

公开(公告)日：1989-02-21

申请号：US935664

申请日：1986-11-26

申请人： Chang-Feng Wan ,  Yingsheng Tung ,  Steven N. Frank

发明人： Chang-Feng Wan ,  Yingsheng Tung ,  Steven N. Frank

IPC分类号： H01L29/423 ,  H01L29/768 ,  H01L31/18 ,  H01L29/78

CPC分类号： H01L29/76883 ,  H01L29/42396 ,  H01L31/1884 ,  Y02E10/50

摘要： A novel process for fabricating a CCD imager arrray (10) having a tin oxide electrode monolayer (18) is disclosed. The process includes a low pressure chemical vapor deposition step using tetramethyltin and oxygen, and an ion implantation step that increased conductivity of the tin oxide electrodes to as high as 700 ohm.sup.-1 cm.sup.-1.

摘要翻译： 公开了一种用于制造具有氧化锡电极单层（18）的CCD成像器装置（10）的新颖方法。 该方法包括使用四甲基锡和氧气的低压化学气相沉积步骤，以及将氧化锡电极的导电率提高到高达700欧姆 - 1厘米-1的离子注入步骤。

公开(公告)号：US5682060A

公开(公告)日：1997-10-28

申请号：US427474

申请日：1995-04-24

申请人： Yingsheng Tung ,  Robert E. Dixon

发明人： Yingsheng Tung ,  Robert E. Dixon

IPC分类号： H01L21/02 ,  H01L29/00 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L28/20 ,  H01L28/40

摘要： A method of making an integrated circuit capacitor and/or resistor and the capacitor and/or resistor wherein the method comprises providing an electrically conductive region, preferably highly doped silicon, forming a first electrode of a capacitor, forming a layer of electrically insulating material, preferably silicon oxide, silicon nitride or a combination thereof, over the surface and forming a layer of a metal silicide, preferably titanium silicide, over the layer of electrically insulating material by forming a layer of polysilicon over the layer of electrically insulating material, forming a layer of a metal, preferably titanium, which forms an electrically conductive composition when reacted with polysilicon over the layer of polysilicon, reacting the metal with the polysilicon to form an electrically conductive layer therewith and removing any unreacted metal. In accordance with a second embodiment, wherein both capacitor electrodes are accessible from one side of the capacitor, a portion of the first electrode is exposed and the layer of a metal silicide extends to and contacts the exposed portion of the first electrode. The portion of the layer of metal silicide contacting the first electrode is electrically isolated from a predetermined other portion of the layer of metal silicide which is disposed over the region to form a second electrode.

摘要翻译： 一种制造集成电路电容器和/或电阻器以及电容器和/或电阻器的方法，其中所述方法包括提供导电区域，优选高度掺杂的硅，形成电容器的第一电极，形成电绝缘材料层， 优选氧化硅，氮化硅或其组合，并通过在电绝缘材料层上形成多晶硅层在电绝缘材料层上形成金属硅化物层，优选硅化钛层，形成 金属层，优选为钛，当与多晶硅层上的多晶硅反应时，其形成导电组合物，使金属与多晶硅反应以与其形成导电层并除去任何未反应的金属。 根据第二实施例，其中两个电容器电极可从电容器的一侧接近，第一电极的一部分被暴露，并且金属硅化物层延伸到第一电极的暴露部分并与其接触。 接触第一电极的金属硅化物层的部分与设置在该区域上的金属硅化物层的预定的其它部分电隔离以形成第二电极。

公开(公告)号：US5374832A

公开(公告)日：1994-12-20

申请号：US111688

申请日：1993-08-25

申请人： Yingsheng Tung ,  Scott Montgomery

发明人： Yingsheng Tung ,  Scott Montgomery

IPC分类号： H01L23/525 ,  H01L29/42 ,  H01L29/68

CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  Y10S148/055

摘要： An antifuse (42) is formed by forming a layer of titanium tungsten (34) overlying a portion of a first metal layer (28). The titanium tungsten layer (34) is oxidized to form a film of oxide (36) on its surface. Insulating regions (30) are formed adjacent the titanium tungsten layer (34) and overlying the first metal layer (28). A second metal layer (40) is formed overlying the titanium tungsten layer (34). Applying a break down voltage across the first and second metal layers (28), (40) will break down the oxide film (36), thereby causing a connection between the first and second metal layers (28), (40).

摘要翻译： 通过形成覆盖在第一金属层（28）的一部分上的钛钨层（34）形成反熔丝（42）。 钛钨层（34）被氧化以在其表面上形成氧化物膜（36）。 绝缘区域（30）形成在钛钨层（34）附近并覆盖第一金属层（28）。 覆盖钛钨层（34）上的第二金属层（40）形成。 在第一和第二金属层（28），（40）上施加击穿电压将会分解氧化膜（36），从而导致第一和第二金属层（28），（40）之间的连接。

公开(公告)号：US5500387A

公开(公告)日：1996-03-19

申请号：US197439

申请日：1994-02-16

申请人： Yingsheng Tung ,  Robert E. Dixon ,  Shih-Hsin Ying

发明人： Yingsheng Tung ,  Robert E. Dixon ,  Shih-Hsin Ying

IPC分类号： H01L21/02 ,  H01L27/06 ,  H01L21/8242

CPC分类号： H01L28/20 ,  H01L27/0629 ,  H01L28/40 ,  Y10S438/981

摘要： A method of making an integrated circuit containing a capacitor comprising the steps of providing a semiconductor substrate having an active region and an oxide region on the substrate defining the active region, forming a mask on the active region, forming a region of heavily doped polysilicon on the oxide region having a doping level of from about 10 to about 15 ohms/square, removing the mask from the active region, commencing fabrication of an active device in the active region, forming a layer of electrically insulating material over the region of heavily doped polysilicon and a layer of electrically insulating material over the active region, forming a layer of heavily doped polysilicon having a doping level of from about 10 to about 15 ohms/square on the electrically insulating material to complete fabrication of the capacitor and on the active region and completing fabrication of an active device in the active region. More than one capacitor can be formed, this being accomplished by concurrently duplication of the above described process of forming a capacitor on another region of the substrate. The capacitors can have different capacitance by enlarging the insulating layer thereof, this being accomplished either by removal of oxide from or addition of oxide to one of the capacitors to the exclusion of the other during processing.

摘要翻译： 一种制造包含电容器的集成电路的方法，包括以下步骤：在限定有源区的衬底上提供具有有源区和氧化物区的半导体衬底，在有源区上形成掩模，形成重掺杂多晶硅区域 所述氧化物区域具有约10至约15欧姆/平方的掺杂水平，从有源区域移除掩模，开始在有源区域中制造有源器件，在重掺杂区域上形成电绝缘材料层 多晶硅和电绝缘材料层，在电绝缘材料上形成具有约10至约15欧姆/平方的掺杂水平的重掺杂多晶硅层，以完成电容器的制造和有源区 并且在有源区域中完成有源器件的制造。 可以形成多于一个的电容器，这通过在衬底的另一区域上形成电容器的上述工艺的同时复制来实现。 电容器可以通过扩大其绝缘层而具有不同的电容，这通过从处理中除去氧化物或氧化物添加到电容器之一来排除另外的电容来实现。