公开(公告)号：US20090226556A1

公开(公告)日：2009-09-10

申请号：US12045034

申请日：2008-03-10

Applicant: Chih-Cheng Lin

Inventor： Chih-Cheng Lin

IPC: B29C45/73 ,  B29C45/14

CPC classification number: B29C45/73 ,  B29C2045/735

Abstract: A molding device includes a male mold and a female mold. The female mold is set opposite to the male mold and forms and a displacement bore and includes insert, which is provided with a heating device, and has a coupling portion. A fixing board is arranged above and coupled to the female mold by at least one guide post, which extends into the displacement bore of the female mold. The fixing board is provided with a cooling metal block, which is extendable into the coupling portion of the female mold to engage the insert to thereby allow the cooling metal block to absorb the heat of the molds for dissipation and thus efficiently lowering the temperature of the molds. The heating device provides thermal energy to set the molds at the optimum temperature for injection molding.

Abstract translation: 模制装置包括阳模和阴模。 阴模与阳模相对设置并形成位移孔，并且包括具有加热装置的插入件，并具有联接部。 固定板通过至少一个延伸到阴模的移动孔中的引导柱布置在阴模的上面并与阴模耦合。 固定板设置有冷却金属块，其可延伸到阴模的联接部分中以接合插入件，从而允许冷却金属块吸收模具的热量以便耗散，因此有效地降低了模具的温度 模具 加热装置提供热能以将模具设置在注射成型的最佳温度。

公开(公告)号：US20060189146A1

公开(公告)日：2006-08-24

申请号：US11061056

申请日：2005-02-18

Applicant: Dah-Chung Oweyang ,  Chih-Cheng Lin ,  Hsueh-Liang Hung ,  Bang-Chein Ho

Inventor： Dah-Chung Oweyang ,  Chih-Cheng Lin ,  Hsueh-Liang Hung ,  Bang-Chein Ho

IPC: H01L21/469

CPC classification number: G03F7/38 ,  G03F7/091 ,  H01L21/0276

Abstract: In the manufacture of a semiconductor, a DBARC layer is deposited upon a wafer to prevent reflection. A photo resist layer is deposited upon the DBARC layer and the wafer is selectively exposed to irradiation. The irradiation generates photo acid (H+ ions) in the exposed areas of the photo resist and DBARC. In order to provide better resolution in the DBARC for micro-features, an electric field is generated vertically through the coated wafer before or during post exposure baking (PEB) to create a uniform vertical distribution of H+ ions though the DBARC. The coated wafer is then developed to remove either the unexposed portions, or exposed portion of the DBARC. The cavities formed by the developer have side walls that are substantially vertical as a result of the uniform vertical distribution of the H+ ions.

Abstract translation: 在制造半导体时，将DBARC层沉积在晶片上以防止反射。 光致抗蚀剂层沉积在DBARC层上，并且晶片被选择性地暴露于照射下。 照射在光致抗蚀剂和DBARC的曝光区域中产生光酸（H +离子）。 为了在DBARC中为微特征提供更好的分辨率，在后曝光烘烤（PEB）之前或期间，通过涂覆的晶片垂直产生电场，以通过DBARC产生H +离子的均匀垂直分布。 然后将涂覆的晶片展开以除去DBARC的未曝光部分或曝光部分。 由显影剂形成的空腔由于H +离子的均匀垂直分布而具有基本垂直的侧壁。

公开(公告)号：US20060128079A1

公开(公告)日：2006-06-15

申请号：US11301019

申请日：2005-12-12

Applicant: Chiang-Hung Tseng ,  Jia-Pang Pang ,  Chih-Cheng Lin ,  Tse Wu

Inventor： Chiang-Hung Tseng ,  Jia-Pang Pang ,  Chih-Cheng Lin ,  Tse Wu

IPC: C23C8/00 ,  H01L21/84 ,  H01L21/00

CPC classification number: H01L27/1259 ,  C23C8/02 ,  C23C10/02 ,  C23C16/047 ,  H01L27/1214 ,  H01L29/66757

Abstract: A method for manufacturing a thin film transistor (TFT) includes the steps of: providing a substrate (1); and forming a TFT circuit on the substrate using laser-induced chemical vapor deposition (LCVD). Detailedly, the method includes providing the bare substrate, cleaning the substrate with cleaning liquid, and successively forming a gate electrode (2), a gate oxide layer (3), a source electrode (5), and a drain electrode (6) on the substrate by LCVD, thus obtaining the thin film transistor. The forming steps may be controlled by one or more computer programs. The LCVD can be pyrolytic LCVD, photolytic LCVD, or photophysical LCVD. The method is simple and inexpensive.

Abstract translation: 一种制造薄膜晶体管（TFT）的方法包括以下步骤：提供衬底（1）; 以及使用激光诱导化学气相沉积（LCVD）在衬底上形成TFT电路。 详细地说，该方法包括提供裸衬底，用清洗液清洗衬底，以及在栅电极（2），栅氧化层（3），源电极（5）和漏电极（6）上依次形成 通过LCVD进行衬底，从而获得薄膜晶体管。 形成步骤可以由一个或多个计算机程序控制。 LCVD可以是热解LCVD，光解LCVD或光物理LCVD。 该方法简单而便宜。

公开(公告)号：US06962771B1

公开(公告)日：2005-11-08

申请号：US09689930

申请日：2000-10-13

Applicant: Chung-Shi Liu ,  Chih-Cheng Lin

Inventor： Chung-Shi Liu ,  Chih-Cheng Lin

IPC: G03F7/00 ,  G03F7/095 ,  H01L21/00 ,  H01L21/027 ,  H01L21/311 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/0276 ,  G03F7/095 ,  H01L21/31144 ,  H01L21/76811

Abstract: Key to the present invention is the subsequent use of two layers of different positive photoresists, possessing different exposure wavelength sensitivities. It is a general object of the present invention to provide a new and improved method of forming semiconductor integrated circuit devices, and more specifically, in the formation of self-aligned dual damascene interconnects and vias, which incorporates two positive photoresist systems, which have different wavelength sensitivities, to form trench/via openings with only a two-step etching process. In addition, the two layers of photoresist exhibit different etch resistant properties, for subsequent selective reactive ion etching steps. The use of a “high contrast” positive photoresist system has been developed wherein the resist system exposure sensitivity is optimized for wavelengths, deep-UV (248 nm) for the top layer of resist, the trench pattern, and I-line (365 nm) for the bottom layer of resist, the via pattern. The resist system provides a process in dual damascene for trench/via formation and has the following properties: selective etch resistance, thermal stability during processing, ease of processing and developing, and good adhesion properties.

Abstract translation: 本发明的关键是随后使用具有不同曝光波长灵敏度的两层不同的正光致抗蚀剂。 本发明的一般目的是提供一种形成半导体集成电路器件的新的和改进的方法，更具体地说，在形成自对准双镶嵌互连和通孔的过程中，其结合了两个具有不同的正光致抗蚀剂系统 波长敏感度，以仅形成两步蚀刻工艺形成沟槽/通孔开口。 此外，两层光致抗蚀剂表现出不同的耐蚀刻性能，用于随后的选择性反应离子蚀刻步骤。 已经开发了使用“高对比度”正性光致抗蚀剂系统，其中抗蚀剂体系曝光灵敏度针对波长，抗蚀剂顶层，沟槽图案和I线（365nm）的深UV（248nm） ）为底层的抗蚀剂，通孔图案。 抗蚀剂体系为沟槽/通孔形成提供了双镶嵌工艺，并且具有以下特性：选择性耐蚀刻性，加工过程中的热稳定性，加工和显影的容易性以及良好的附着性。

公开(公告)号：US5321193A

公开(公告)日：1994-06-14

申请号：US748347

申请日：1991-08-22

Applicant: Chih-Cheng Lin ,  Hung-Ming Yang ,  Chong-Chien Lai ,  Chien-Chung Chang ,  Larry L. K. Kuo ,  Kun-Yung Tsai

Inventor： Chih-Cheng Lin ,  Hung-Ming Yang ,  Chong-Chien Lai ,  Chien-Chung Chang ,  Larry L. K. Kuo ,  Kun-Yung Tsai

IPC: B01J21/02 ,  C07C5/25 ,  C07C5/27 ,  C07C5/22

CPC classification number: C07C5/2512 ,  B01J21/02 ,  C07C5/2772

Abstract: A process for the skeletal isomerization of olefins wherein the olefins are contacted with a SKISO-11 alumina base catalyst to convert into isomerized products effectively under the conversion conditions comprising a temperature of above 200.degree. C. to about 650.degree. C., the pressure of 0.3 to about 10 atmospheres and a molar ratio of hydrogen or nitrogen to olefins feed from 0 to about 10.

Abstract translation: 一种烯烃骨架异构化方法，其中烯烃与SKISO-11氧化铝基催化剂接触，在包含200℃至650℃的温度的转化条件下有效地转化成异构化产物， 0.3至约10个大气压，氢或氮与烯烃的摩尔比为0至约10。

公开(公告)号：US12146327B2

公开(公告)日：2024-11-19

申请号：US17874971

申请日：2022-07-27

Applicant: Chih-Cheng Lin ,  Chuan-Hsuan Lin

Inventor： Chih-Cheng Lin ,  Chuan-Hsuan Lin

IPC: E04G15/02 ,  E04C5/16 ,  E04F13/06 ,  E06B1/02

Abstract: The present invention relates to an anti-cracking assembly structure for door and window corner wall and anti-cracking component thereof. The anti-cracking components of the anti-cracking assembly structure for door and window corner wall has a plurality of protruding ribs and grooves formed at intervals on a surface thereof. The protruding ribs and grooves are arc-shaped and arranged in parallel to each other. When the reinforced concrete wall is subjected to an external force and stress is generated at the corner of the door and window frames, the stress can be guided along the arc-shaped protruding ribs and arc-shaped grooves on the surface of anti-cracking component to change the transmission direction of the force at the stress end, so as to transmit and disperse the stress to the peripheral side more quickly. Accordingly, it can more effectively prevent the occurrence of 45-degree shear cracks at the corners.

公开(公告)号：US20100026592A1

公开(公告)日：2010-02-04

申请号：US12453013

申请日：2009-04-28

Applicant: Yin-Yu Chen ,  Chen-Yu Chou ,  Chih-Cheng Lin ,  Yu-Lun Teng

Inventor： Yin-Yu Chen ,  Chen-Yu Chou ,  Chih-Cheng Lin ,  Yu-Lun Teng

IPC: H01Q9/04 ,  H01Q1/24

CPC classification number: H01Q1/2291 ,  H01Q9/0421

Abstract: An antenna module for wireless signal transmission of an electronic device is disclosed. The antenna module comprises an antenna body and a fixing part. The antenna body comprises a radiating element, a grounding element, a connecting element, and a feeding point. The radiating element has a first radiating area and a second radiating area. The connecting element has a first end and a second end. The first end is connected with the first radiating area of the radiating element and the second end is connected with the grounding element. The feeding point is disposed on the radiating element and is used to feed a signal. The fixing part comprises a main body and a first clip portion. The main body is used to match the shape of the antenna body. The first clip portion is used to clip and fix the antenna body.

Abstract translation: 公开了一种用于电子设备的无线信号传输的天线模块。 天线模块包括天线体和固定部。 天线体包括辐射元件，接地元件，连接元件和馈电点。 辐射元件具有第一辐射区域和第二辐射区域。 连接元件具有第一端和第二端。 第一端与辐射元件的第一辐射区域连接，第二端与接地元件连接。 馈电点设置在辐射元件上，用于馈送信号。 固定部分包括主体和第一夹子部分。 主体用于匹配天线体的形状。 第一夹子部分用于夹持和固定天线体。

公开(公告)号：US20090119689A1

公开(公告)日：2009-05-07

申请号：US12211049

申请日：2008-09-15

Applicant: Chi-Chao Hsu ,  Chih-Cheng Lin

Inventor： Chi-Chao Hsu ,  Chih-Cheng Lin

IPC: G11B17/04

CPC classification number: G11B33/123 ,  G11B17/043

Abstract: An optical disc drive suitable for reading a data in an optical disc is provided. The optical disc drive includes a housing, a tray suitable for carrying the optical disc, and a panel. The housing has a first opening, and the panel is disposed at the first opening. The tray is disposed in the housing. The tray has a blocking plate. The blocking plate is disposed on a front edge of the tray, and multiple protrusions are disposed on an upper edge of the blocking plate. Furthermore, the panel has a second opening, and the second opening has multiple notches corresponding to the protrusions. The tray is suitable for exiting out of the housing through the second opening, and the protrusions are suitable for passing through the notches.

Abstract translation: 提供适于读取光盘中的数据的光盘驱动器。 光盘驱动器包括壳体，适于承载光盘的托盘和面板。 壳体具有第一开口，并且面板设置在第一开口处。 托盘设置在壳体中。 托盘具有阻挡板。 阻挡板设置在托盘的前边缘上，并且多个突起设置在阻挡板的上边缘上。 此外，面板具有第二开口，并且第二开口具有对应于突起的多个凹口。 托盘适于通过第二开口离开壳体，并且突起适于穿过凹口。

公开(公告)号：US20090000449A1

公开(公告)日：2009-01-01

申请号：US11824010

申请日：2007-06-29

Applicant: Chih-Cheng Lin ,  Msin-Msin Wang ,  Chun-Te Lee ,  Hsin-Yi Cheng ,  Ming-Hui Huang ,  Jiann-Fang Chang

Inventor： Chih-Cheng Lin ,  Msin-Msin Wang ,  Chun-Te Lee ,  Hsin-Yi Cheng ,  Ming-Hui Huang ,  Jiann-Fang Chang

IPC: B23D33/02

CPC classification number: B23D47/025 ,  Y10T83/7684

Abstract: A tightening device for positioning a worktable of a machine tool to a base includes a saddle member disposed on the base, and a positioning carrier member carrying the worktable and movable relative to an abutment wall of the saddle member. An elongate adjusting member has a force-delivering end spaced apart from the abutment wall, and a middle threaded segment threadedly engaged with the positioning carrier member such that the force-delivering end is movable towards or away from the abutment wall. A force transmitting member is loosely connected to the positioning carrier member, and is configured such that a spiral force resulting from a screw-in movement is taken up by a proximate end thereof from the force-delivering end, and is transformed to a translation force that moves a distal end thereof to tightly engage the abutment wall.

Abstract translation: 用于将机床的工作台定位到基座的紧固装置包括设置在基座上的鞍座构件和承载工作台并相对于鞍座构件的邻接壁可移动的定位承载构件。 细长的调节构件具有与邻接壁间隔开的力传递端，以及与定位承载构件螺纹接合的中间螺纹段，使得力传递端可朝向或远离邻接壁移动。 力传递构件松动地连接到定位承载构件，并且构造成使得由螺旋运动产生的螺旋力由其输送端的近端吸收，并且被转换成平移力 其移动其远端以紧密接合邻接壁。

公开(公告)号：US07396705B2

公开(公告)日：2008-07-08

申请号：US11301019

申请日：2005-12-12

Applicant: Chiang-Hung Tseng ,  Jia-Pang Pang ,  Chih-Cheng Lin ,  Tse Wu

Inventor： Chiang-Hung Tseng ,  Jia-Pang Pang ,  Chih-Cheng Lin ,  Tse Wu

IPC: H01L21/82

CPC classification number: H01L27/1259 ,  C23C8/02 ,  C23C10/02 ,  C23C16/047 ,  H01L27/1214 ,  H01L29/66757

Abstract: A method for manufacturing a thin film transistor (TFT) includes the steps of: providing a substrate (1); and forming a TFT circuit on the substrate using laser-induced chemical vapor deposition (LCVD). Detailedly, the method includes providing the bare substrate, cleaning the substrate with cleaning liquid, and successively forming a gate electrode (2), a gate oxide layer (3), a source electrode (5), and a drain electrode (6) on the substrate by LCVD, thus obtaining the thin film transistor. The forming steps may be controlled by one or more computer programs. The LCVD can be pyrolytic LCVD, photolytic LCVD, or photophysical LCVD. The method is simple and inexpensive.

Abstract translation: 一种制造薄膜晶体管（TFT）的方法包括以下步骤：提供衬底（1）; 以及使用激光诱导化学气相沉积（LCVD）在衬底上形成TFT电路。 详细地说，该方法包括提供裸衬底，用清洗液清洗衬底，以及在栅电极（2），栅氧化层（3），源电极（5）和漏电极（6）上依次形成 通过LCVD进行衬底，从而获得薄膜晶体管。 形成步骤可以由一个或多个计算机程序控制。 LCVD可以是热解LCVD，光解LCVD或光物理LCVD。 该方法简单而便宜。