公开(公告)号：US20150104176A1

公开(公告)日：2015-04-16

申请号：US14514771

申请日：2014-10-15

Applicant: Coriant Advanced Technology, LLC

Inventor： Thomas Baehr-Jones ,  Yang Liu ,  Ran Ding ,  Michael J. Hochberg

IPC: H04B10/516 ,  H04B10/50 ,  H04J14/02

CPC classification number: H04J14/02 ,  H04B10/503 ,  H04B10/506 ,  H04B10/54

Abstract: A transmitter comprising a plurality of modulator and multiplexer (Mod-MUX) units, each Mod-MUX unit operating at an optical wavelength different from the other Mod-MUX units. The transmitter can additional include in each Mod-MUX unit two optical taps and three photodetectors that are configured to allow the respective Mod-MUX unit to be tuned to achieve thermal stabilization and achieve effective modulation and WDM operation across a range of temperatures. The Mod-MUX transmitter avoids the use of a frequency comb. The Mod-MUX transmitter avoids cross-modulation between different modulators for different laser signals.

Abstract translation: 一种发射机，包括多个调制器和多路复用器（Mod-MUX）单元，每个Mod-MUX单元在与其它Mod-MUX单元不同的光波长下工作。 发射机可以在每个Mod-MUX单元中额外包括两个光学抽头和三个光电检测器，其被配置为允许对相应的Mod-MUX单元进行调谐，以实现热稳定，并在整个温度范围内实现有效的调制和WDM操作。 Mod-MUX发送器避免使用频率梳。 Mod-MUX发射器避免了用于不同激光信号的不同调制器之间的交叉调制。

公开(公告)号：US09470844B1

公开(公告)日：2016-10-18

申请号：US14788608

申请日：2015-06-30

Applicant: Coriant Advanced Technology, LLC

Inventor： Yangjin Ma ,  Ruizhi Shi ,  Yang Liu

IPC: G02B6/00 ,  G02B6/126 ,  G02B6/122 ,  G02B6/125

CPC classification number: G02B6/126 ,  G02B6/1228 ,  G02B6/125

Abstract: A low loss high extinction ratio on-chip polarizer has at bi-layer optical taper with an input port of width W1 that communicates with a mode squeezer, followed by an S-bend (or dump bend), and finally a taper having an output port of width W1. The illumination that passes through the low loss high extinction ratio on-chip polarizer has a TM0 mode converted to a TE1 mode which is lost in the mode squeezer and S-bend section, while an input TE0 mode is delivered at the output as a substantially pure TE0 signal of nearly undiminished intensity.

Abstract translation: 低损耗高消光比片上偏振器具有双层光学锥形，其具有与模式挤压机连通的宽度W1的输入端口，随后是S形弯曲（或倾倒弯曲），最后是具有输出的锥形 端口宽度W1。 通过低损耗高消光比片上偏振器的照明具有转换为在模式压缩器和S形弯曲部分中损失的TE1模式的TM0模式，而在输出端输入TE0模式基本上 纯TE0信号几乎未降低强度。

公开(公告)号：US09425919B2

公开(公告)日：2016-08-23

申请号：US14514771

申请日：2014-10-15

Applicant: Coriant Advanced Technology, LLC

Inventor： Thomas Baehr-Jones ,  Yang Liu ,  Ran Ding ,  Michael J. Hochberg

IPC: H04B10/50 ,  H04J14/02

CPC classification number: H04J14/02 ,  H04B10/503 ,  H04B10/506 ,  H04B10/54

Abstract: A transmitter comprising a plurality of modulator and multiplexer (Mod-MUX) units, each Mod-MUX unit operating at an optical wavelength different from the other Mod-MUX units. The transmitter can additional include in each Mod-MUX unit two optical taps and three photodetectors that are configured to allow the respective Mod-MUX unit to be tuned to achieve thermal stabilization and achieve effective modulation and WDM operation across a range of temperatures. The Mod-MUX transmitter avoids the use of a frequency comb. The Mod-MUX transmitter avoids cross-modulation between different modulators for different laser signals.

Abstract translation: 一种发射机，包括多个调制器和多路复用器（Mod-MUX）单元，每个Mod-MUX单元在与其它Mod-MUX单元不同的光波长下工作。 发射机可以在每个Mod-MUX单元中额外包括两个光学抽头和三个光电检测器，其被配置为允许对相应的Mod-MUX单元进行调谐，以实现热稳定，并在整个温度范围内实现有效的调制和WDM操作。 Mod-MUX发送器避免使用频率梳。 Mod-MUX发射器避免了用于不同激光信号的不同调制器之间的交叉调制。

公开(公告)号：US20150340538A1

公开(公告)日：2015-11-26

申请号：US14818060

申请日：2015-08-04

Applicant: Coriant Advanced Technology, LLC

Inventor： Ari Novack ,  Yang Liu ,  Yi Zhang

IPC: H01L31/107 ,  H01L31/0352 ,  H01L31/028

CPC classification number: H01L31/1075 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/107 ,  H01L31/1804 ,  Y02E10/50

Abstract: A lateral Ge/Si APD constructed on a silicon-on-insulator wafer includes a silicon device layer having regions that are doped to provide a lateral electric field and an avalanche region. A region having a modest doping level is in contact with a germanium body. There are no metal contacts made to the germanium body. The electrical contacts to the germanium body are made by way of the doped regions in the silicon device layer.

Abstract translation: 构造在绝缘体上硅晶片上的横向Ge / Si APD包括具有掺杂以提供横向电场和雪崩区域的区域的硅器件层。 具有适度掺杂水平的区域与锗体接触。 锗体没有金属接触。 通过硅器件层中的掺杂区域制造锗体的电接触。