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公开(公告)号：US09810840B2
公开(公告)日：2017-11-07
申请号：US14989436
申请日：2016-01-06
Applicant: Coriant Advanced Technology, LLC
Inventor： Ruizhi Shi , Thomas Wetteland Baehr-Jones , Yangjin Ma , Yang Liu , Michael J. Hochberg , Matthew Akio Streshinsky
CPC classification number: G02B6/126 , G02B6/1228 , G02B2006/12107 , G02B2006/12126 , G02B2006/12152
Abstract: A low loss high extinction ratio on-chip polarizer is disclosed. The polarizer includes an input waveguide taper having an outer waveguiding region that widens in the direction of light propagation along at least a portion of the taper length, and a core waveguiding region that narrows in the direction of light propagation along at least a portion of the taper length, so as to selectively squeeze out light of undesired modes into the outer regions while preserving light of a desired mode in the waveguide core. An integrated light absorber/deflector may be coupled to the outer waveguiding regions.
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公开(公告)号：US09739938B2
公开(公告)日：2017-08-22
申请号：US14963842
申请日：2015-12-09
Applicant: Coriant Advanced Technology, LLC
Inventor： Ruizhi Shi , Yang Liu , Ari Novack , Yangjin Ma , Kishore Padmaraju , Michael J. Hochberg
CPC classification number: G02B6/12004 , G02B6/122 , G02B6/4277 , G02B2006/12157
Abstract: A light shield may be formed in photonic integrated circuit between integrated optical devices of the photonic integrated circuit. The light shield may be built by using materials already present in the photonic integrated circuit, for example the light shield may include metal walls and doped semiconductor regions. Light-emitting or light-sensitive integrated optical devices or modules of a photonic integrated circuit may be constructed with light shields integrally built in.
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公开(公告)号：US09851506B2
公开(公告)日：2017-12-26
申请号：US14830046
申请日：2015-08-19
Applicant: Coriant Advanced Technology, LLC
Inventor： Ruizhi Shi , Michael J. Hochberg , Ari Jason Novack , Thomas Wetteland Baehr-Jones
CPC classification number: G02B6/134 , G02B6/12002 , G02B6/1223 , G02B6/1228 , G02B6/132 , G02B6/136 , G02B6/2821 , G02B6/305 , G02B2006/12038
Abstract: An integrated optical device fabricated in the back end of line process located within the vertical span of the metal stack and having one or more advantages over a corresponding integrated optical device fabricated in the silicon on insulator layer.
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公开(公告)号：US20170192171A1
公开(公告)日：2017-07-06
申请号：US14989436
申请日：2016-01-06
Applicant: Coriant Advanced Technology, LLC
Inventor： Ruizhi Shi , Thomas Wetteland Baehr-Jones , Yangjin Ma , Yang Liu , Michael J. Hochberg , Matthew Akio Streshinsky
CPC classification number: G02B6/126 , G02B6/1228 , G02B2006/12107 , G02B2006/12126 , G02B2006/12152
Abstract: A low loss high extinction ratio on-chip polarizer is disclosed. The polarizer includes an input waveguide taper having an outer waveguiding region that widens in the direction of light propagation along at least a portion of the taper length, and a core waveguiding region that narrows in the direction of light propagation along at least a portion of the taper length, so as to selectively squeeze out light of undesired modes into the outer regions while preserving light of a desired mode in the waveguide core. An integrated light absorber/deflector may be coupled to the outer waveguiding regions.
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公开(公告)号：US20170092785A1
公开(公告)日：2017-03-30
申请号：US14864760
申请日：2015-09-24
Applicant: Coriant Advanced Technology, LLC
Inventor： Ari Novack , Ruizhi Shi , Jean Claude Labarrie
IPC: H01L31/024 , H01L31/18 , H01L31/20 , H01L31/028
CPC classification number: H01L31/024 , H01L23/345 , H01L27/14 , H01L27/1443 , H01L27/16 , H01L31/028 , H01L31/1808 , H01L31/204 , Y02E10/547
Abstract: A temperature-controlled photodetector sub-system is described. The temperature control element allows the operation of the photodetector at a desired temperature. The temperature control element can be a heater or a cooler. In some cases, the photodetector is a germanium photodetector. In some cases a temperature measuring device is provided. In some cases, a control circuit is used to control the temperature of the germanium photodetector within a temperature range, or at a temperature of interest. An advantage provided by the apparatus described is the operation of the photodetector so that the responsivity of the germanium detector can be held at essentially a constant value.
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Patent Agency Ranking
公开(公告)号：US20160291265A1
公开(公告)日：2016-10-06
申请号：US15087278
申请日：2016-03-31
Applicant: Coriant Advanced Technology, LLC
Inventor： David Henry Kinghorn , Ari Jason Novack , Holger N. Klein , Nathan A. Nuttall , Kishor V. Desai , Daniel J. Blumenthal , Michael J. Hochberg , Ruizhi Shi
CPC classification number: G02B6/423 , G02B6/131 , G02B6/136 , G02B6/4238 , G02B6/4251 , G02B6/4268 , G02B6/4274 , G02B2006/12061 , G02B2006/12097 , G02B2006/121 , H01L25/16 , H01L25/162 , H01L25/167 , H01L25/50 , H01L31/125 , H01L31/18 , Y02P70/521
Abstract: Two semiconductor chips are optically aligned to form a hybrid semiconductor device. Both chips have optical waveguides and alignment surface positioned at precisely-defined complementary vertical offsets from optical axes of the corresponding waveguides, so that the waveguides are vertically aligned when one of the chips is placed atop the other with their alignment surface abutting each other. The position of the at least one of the alignment surface in a layer stack of its chip is precisely defined by epitaxy. The chips are bonded at offset bonding pads with the alignment surfaces abutting in the absence of bonding material therebetween.
Abstract translation: 两个半导体芯片被光学对准以形成混合半导体器件。 两个芯片具有光波导和对准表面，其定位在与相应波导的光轴精确定义的互补垂直偏移上，使得当其中一个芯片被放置在另一个芯片上并且它们的对准表面彼此邻接时，波导器垂直对准。 其芯片的层叠中的至少一个对准表面的位置通过外延精确地限定。 芯片在偏移接合焊盘处接合，其中对准表面在其间没有接合材料的情况下抵接。
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公开(公告)号：US20160033765A1
公开(公告)日：2016-02-04
申请号：US14834597
申请日：2015-08-25
Applicant: Coriant Advanced Technology, LLC
Inventor： Yang Liu , Yangjin Ma , Ruizhi Shi , Michael J. Hochberg , Yi Zhang , Shuyu Yang , Thomas Wetteland Baehr-Jones
CPC classification number: G02B6/125 , G02B6/107 , G02B6/1223 , G02B6/1228 , G02B6/2808 , G02B27/0012 , G02B2006/12038 , G02B2006/12061 , G02B2006/1215 , G06F17/5009 , G06F17/5018 , G06F17/5077 , G06N3/126
Abstract: A compact, low-loss and wavelength insensitive Y-junction for submicron silicon waveguides. The design was performed using FDTD and particle swarm optimization (PSO). The device was fabricated in a 248 nm CMOS line. Measured average insertion loss is 0.28±0.02 dB across an 8-inch wafer. The device footprint is less than 1.2 μm×2 μm, orders of magnitude smaller than MMI and directional couplers.
Abstract translation: 亚微米硅波导的紧凑，低损耗和波长不敏感的Y结。 该设计采用FDTD和粒子群优化（PSO）进行。 该器件采用248nm CMOS线制造。 8英寸晶圆的测量平均插入损耗为0.28±0.02 dB。 器件占地面积小于1.2μm×2μm，比MMI和定向耦合器小一个数量级。
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公开(公告)号：US20160012176A1
公开(公告)日：2016-01-14
申请号：US14858519
申请日：2015-09-18
Applicant: Coriant Advanced Technology, LLC
Inventor： Yang Liu , Michael J. Hochberg , Yi Zhang , Yangjin Ma , Ruizhi Shi
CPC classification number: G06F17/5081 , G02B6/107 , G02B6/1223 , G02B6/125 , G02B6/2808 , G02B2006/12061 , G02B2006/1215 , G06F17/5009 , G06F17/5077
Abstract: A compact, low-loss and wavelength insensitive Y-junction for submicron silicon waveguides. The design was performed using FDTD and particle swarm optimization (PSO). The device was fabricated in a 248 nm CMOS line. Measured average insertion loss is 0.28±0.02 dB across an 8-inch wafer. The device footprint is less than 1.2 μm×2 μm, orders of magnitude smaller than MMI and directional couplers.
Abstract translation: 亚微米硅波导的紧凑，低损耗和波长不敏感的Y结。 该设计采用FDTD和粒子群优化（PSO）进行。 该器件采用248nm CMOS线制造。 8英寸晶圆的测量平均插入损耗为0.28±0.02 dB。 器件占地面积小于1.2μm×2μm，比MMI和定向耦合器小一个数量级。
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公开(公告)号：US20160356960A1
公开(公告)日：2016-12-08
申请号：US14798780
申请日：2015-07-14
Applicant: Coriant Advanced Technology, LLC
Inventor： Ari Novack , Ruizhi Shi , Michael J. Hochberg , Thomas Baehr-Jones
CPC classification number: G02B6/305 , G02B6/12002 , G02B6/1223 , G02B6/1228 , G02B6/125 , G02B6/132 , G02B6/134 , G02B6/136 , G02B6/14 , G02B6/2821 , G02B6/29332 , G02B2006/12121 , G02B2006/12123
Abstract: A composite optical waveguide is constructed using an array of waveguide cores, in which one core is tapered to a larger dimension, so that all the cores are used as a composite input port, and the one larger core is used as an output port. In addition, transverse couplers can be fabricated in a similar fashion. The waveguide cores are preferably made of SiN. In some cases, a layer of SiN which is provided as an etch stop is used as at least one of the waveguide cores. The waveguide cores can be spaced away from a semiconductor layer so as to minimize loses.
Abstract translation: 使用波导芯阵列来构造复合光波导，其中一个核心以更大的尺寸逐渐变细，使得所有的核心被用作复合输入端口，并且一个较大的核心用作输出端口。 此外，横向耦合器可以以类似的方式制造。 波导芯优选由SiN制成。 在一些情况下，作为蚀刻停止层提供的SiN层被用作至少一个波导芯。 波导芯可以与半导体层间隔开，以便使损失最小化。
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公开(公告)号：US09470844B1
公开(公告)日：2016-10-18
申请号：US14788608
申请日：2015-06-30
Applicant: Coriant Advanced Technology, LLC
Inventor： Yangjin Ma , Ruizhi Shi , Yang Liu
CPC classification number: G02B6/126 , G02B6/1228 , G02B6/125
Abstract: A low loss high extinction ratio on-chip polarizer has at bi-layer optical taper with an input port of width W1 that communicates with a mode squeezer, followed by an S-bend (or dump bend), and finally a taper having an output port of width W1. The illumination that passes through the low loss high extinction ratio on-chip polarizer has a TM0 mode converted to a TE1 mode which is lost in the mode squeezer and S-bend section, while an input TE0 mode is delivered at the output as a substantially pure TE0 signal of nearly undiminished intensity.
Abstract translation: 低损耗高消光比片上偏振器具有双层光学锥形，其具有与模式挤压机连通的宽度W1的输入端口，随后是S形弯曲（或倾倒弯曲），最后是具有输出的锥形 端口宽度W1。 通过低损耗高消光比片上偏振器的照明具有转换为在模式压缩器和S形弯曲部分中损失的TE1模式的TM0模式，而在输出端输入TE0模式基本上 纯TE0信号几乎未降低强度。
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