公开(公告)号：US07044997B2

公开(公告)日：2006-05-16

申请号：US10669755

申请日：2003-09-24

申请人： Allen P. Mardian ,  Philip H. Campbell

发明人： Allen P. Mardian ,  Philip H. Campbell

IPC分类号： B01D8/00 ,  B01D45/00

CPC分类号： C23C16/4412 ,  B01D5/0006 ,  B01D53/002 ,  B01D53/68 ,  B01D2251/2062 ,  B01D2258/0216 ,  Y10S55/15

摘要： A trap device including at least one substance delivery element for introducing a substance therein is disclosed. The delivered substance may influence the nature of deposits that have formed within the trap device, may influence the formation of deposits within the trap device, or may cause a precipitate to form. Deposit interaction elements may be employed to influence the distribution or redistribution of deposits within the trap device. Deposit interaction elements may effect thermal conditions, introduce substances, or physically interact with deposits within the trap device. Further, a storage region within the trap device may be used to accumulate deposits. In one embodiment, a substantially continuous path through the trap device may be maintained or preserved so that deposits form within the trap device except substantially along the path. The present invention also encompasses a method of operation of a trap device as well as a system incorporating same.

公开(公告)号：US07329292B2

公开(公告)日：2008-02-12

申请号：US11259490

申请日：2005-10-25

申请人： Allen P. Mardian ,  Philip H. Campbell

发明人： Allen P. Mardian ,  Philip H. Campbell

IPC分类号： B01D41/00

CPC分类号： C23C16/4412 ,  B01D5/0006 ,  B01D53/002 ,  B01D53/68 ,  B01D2251/2062 ,  B01D2258/0216 ,  Y10S55/15

摘要： A trap device including at least one substance delivery element for introducing a substance therein is disclosed. The delivered substance may influence the nature of deposits that have formed within the trap device, may influence the formation of deposits within the trap device, or may cause a precipitate to form. Deposit interaction elements may be employed to influence the distribution or redistribution of deposits within the trap device. Deposit interaction elements may effect thermal conditions, introduce substances, or physically interact with deposits within the trap device. Further, a storage region within the trap device may be used to accumulate deposits. In one embodiment, a substantially continuous path through the trap device may be maintained or preserved so that deposits form within the trap device except substantially along the path. The present invention also encompasses a method of operation of a trap device as well as a system incorporating same.

摘要翻译： 公开了一种捕集装置，其包括用于将物质引入其中的至少一种物质递送元件。 所运送的物质可能影响在捕集装置内形成的沉积物的性质，可能影响捕集装置内沉积物的形成，或可能导致形成沉淀。 可以使用沉积相互作用元件来影响捕集装置内的沉积物的分布或再分布。 沉积相互作用元件可以影响热条件，引入物质，或与陷阱装置内的沉积物物理相互作用。 此外，捕集装置内的存储区域可以用于积累沉积物。 在一个实施例中，可以维持或保持通过捕集装置的基本上连续的路径，使得沉积物形成在捕集装置内，除了基本上沿着路径。 本发明还包括捕获装置的操作方法以及结合其的系统。

公开(公告)号：US06716284B2

公开(公告)日：2004-04-06

申请号：US10166902

申请日：2002-06-11

申请人： Philip H. Campbell ,  David J. Kubista

发明人： Philip H. Campbell ,  David J. Kubista

IPC分类号： C30B2514

CPC分类号： C23C16/45544 ,  C23C16/4401 ,  C23C16/4412

摘要： An apparatus and process for atomic layer deposition that minimizes mixing of the chemicals and reactive gases is disclosed. The first precursor and second precursor are only mixed with other chemicals and reactive gases when and where desired by installing and monitoring a dispensing fore-line. Also, independent and dedicated chamber outlets, isolation valves, exhaust fore-lines, and exhaust pumps are provided that are activated for the specific gas when needed.

公开(公告)号：US07396570B2

公开(公告)日：2008-07-08

申请号：US11394988

申请日：2006-03-30

申请人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

IPC分类号： H01L21/4763 ,  H05H1/24

CPC分类号： H01L21/28518 ,  C23C16/42 ,  H01L21/28556

摘要： Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.

公开(公告)号：US06586285B1

公开(公告)日：2003-07-01

申请号：US10094017

申请日：2002-03-06

申请人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

IPC分类号： H01L2184

CPC分类号： C23C16/4407 ,  C23C16/14 ,  C23C16/42 ,  C23C16/4404

摘要： A first cleaning is conducted on a plasma enhanced chemical vapor deposition chamber at room ambient pressure. After the first cleaning, elemental titanium comprising layers are chemical vapor deposited on a first plurality of substrates within the chamber using at least TiCl4. Thereafter, titanium silicide comprising layers are plasma enhanced chemical vapor deposited on a second plurality of substrates within the chamber using at least TiCl4 and a silane. Thereafter, a second cleaning is conducted on the chamber at ambient room pressure. In one implementation after the first cleaning, an elemental titanium comprising layer is chemical vapor deposited over internal surfaces of the chamber while no semiconductor substrate is received within the chamber. In another implementation, a titanium silicide comprising layer is chemical vapor deposited over internal surfaces of the chamber while no semiconductor substrate is received within the chamber.

摘要翻译： 在室内环境压力下，在等离子体增强化学气相沉积室上进行第一次清洗。 在第一次清洁之后，使用至少TiCl 4，在室内的第一组多个衬底上化学气相沉积包含层的元素钛。 此后，包含层的硅化钛是使用至少TiCl 4和硅烷沉积在室内的第二多个基板上的等离子体增强化学气相。 此后，在室内在室内进行第二清洗。 在第一次清洁之后的一个实施方案中，元素钛包含层在室的内表面上化学气相沉积，而在室内没有接收半导体衬底。 在另一个实施方案中，包含硅化钛的层在室的内表面上化学气相沉积，而在腔室内不接收半导体衬底。

公开(公告)号：US07033642B2

公开(公告)日：2006-04-25

申请号：US10666025

申请日：2003-09-17

申请人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

IPC分类号： C23C16/14 ,  C23C16/24

CPC分类号： H01L21/28518 ,  C23C16/42 ,  H01L21/28556

摘要： Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.

摘要翻译： 公开了在衬底上形成包括层的硅化钛的化学气相沉积方法。 TiCl 4 S和至少一种硅烷首先以等于或高于TiCl 4的第一体积比与硅烷一起进料到室中，持续第一段时间。 该比例足够高以避免钛硅化物在衬底上的可测量沉积。 或者，在第一时间段内没有可测量的硅烷进料到室中。 无论如何，在第一阶段之后，将TiCl 4 S和至少一种硅烷以等于或低于TiCl 4的第二体积比与硅烷一起进料到室中，持续第二阶段 时间。 如果在第一时间段内进料至少一种硅烷，则第二体积比率低于第一体积比。 无论如何，第二次进料对于等离子体有效地提高了化学气相沉积在基底上的包含硅的硅化钛。

公开(公告)号：US06730355B2

公开(公告)日：2004-05-04

申请号：US10094579

申请日：2002-03-06

申请人： Ammar Derraa ,  Cem Basceri ,  Irina Vasilyeva ,  Philip H. Campbell ,  Gurtej S. Sandhu

发明人： Ammar Derraa ,  Cem Basceri ,  Irina Vasilyeva ,  Philip H. Campbell ,  Gurtej S. Sandhu

IPC分类号： C23C1642

CPC分类号： C23C16/4408 ,  C23C16/42 ,  C23C16/4405

摘要： A first substrate is provided within a chemical vapor deposition chamber. A reactive gas mixture comprising TiCl4 and a silane is provided within the chamber effective to first chemically vapor deposit a titanium silicide comprising layer on the first substrate. After the first deposit, the first substrate is removed from the chamber. After the first deposit, a first cleaning is conducted within the chamber with a chlorine comprising gas. After the first cleaning, a second cleaning is conducted within the chamber with a hydrogen comprising gas. After the second cleaning and after the removing, a titanium silicide comprising layer is chemically vapor deposited over a second substrate within the chamber using a reactive gas mixture comprising TiCl4 and a silane. Other implementations are disclosed.

摘要翻译： 第一基板设置在化学气相沉积室内。 在室内提供包含TiCl 4和硅烷的反应气体混合物，其有效地首先在第一衬底上化学气相沉积包含硅化钛的层。 在第一次沉积之后，将第一衬底从腔室中取出。 在第一次沉积之后，在室内用含氯气体进行第一次清洗。 在第一次清洁之后，在室内用含氢气体进行第二次清洗。 在第二次清洁之后并且在除去之后，使用包含TiCl 4和硅烷的反应性气体混合物，在室内的第二衬底上化学气相沉积包含硅化钛的层。 公开了其他实现。

公开(公告)号：US07393563B2

公开(公告)日：2008-07-01

申请号：US11394989

申请日：2006-03-30

申请人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

IPC分类号： C23C16/14 ,  C23C16/24

CPC分类号： H01L21/28518 ,  C23C16/42 ,  H01L21/28556

摘要： Chemical vapor deposition methods of forming titanium suicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.

摘要翻译： 公开了在衬底上形成包括层的硅化钛的化学气相沉积方法。 TiCl 4 S和至少一种硅烷首先以等于或高于TiCl 4的第一体积比与硅烷一起进料到室中，持续第一段时间。 该比例足够高以避免钛硅化物在衬底上的可测量沉积。 或者，在第一时间段内没有可测量的硅烷进料到室中。 无论如何，在第一阶段之后，将TiCl 4 S和至少一种硅烷以等于或低于TiCl 4的第二体积比与硅烷一起进料到室中，持续第二阶段 时间。 如果在第一时间段内进料至少一种硅烷，则第二体积比率低于第一体积比。 无论如何，第二次进料对于等离子体有效地提高了化学气相沉积在基底上的包含硅的硅化钛。

公开(公告)号：US06767823B2

公开(公告)日：2004-07-27

申请号：US10094580

申请日：2002-03-06

申请人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

IPC分类号： H01L214763

CPC分类号： H01L21/28518 ,  C23C16/42 ,  H01L21/28556

摘要： Chemical vapor deposition methods of forming titanium silicide comprising layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide comprising layer on the substrate.

摘要翻译： 公开了在衬底上形成包含层的硅化钛的化学气相沉积方法。 首先将TiCl 4和至少一种硅烷以等于或高于TiCl 4与硅烷的第一体积比率进料到室中。 该比例足够高以避免钛硅化物在衬底上的可测量沉积。 或者，在第一时间段内没有可测量的硅烷进料到室中。 无论如何，在第一阶段之后，将TiCl 4和至少一种硅烷以等于或低于第二体积比的TiCl 4与硅烷进料至室中第二时间段。 如果在第一时间段内进料至少一种硅烷，则第二体积比率低于第一体积比。 无论如何，第二次进料对于等离子体有效地增强化学气相沉积在基底上的包含硅化钛的层。

公开(公告)号：US06758911B2

公开(公告)日：2004-07-06

申请号：US10190792

申请日：2002-07-08

申请人： Philip H. Campbell ,  David J. Kubista

发明人： Philip H. Campbell ,  David J. Kubista

IPC分类号： C23C1600

CPC分类号： C23C16/45544 ,  C23C16/4401 ,  C23C16/4412

摘要： An apparatus and process for atomic layer deposition that minimizes mixing of the chemicals and reactive gases is disclosed. The first precursor and second precursor are only mixed with other chemicals and reactive gases when and where desired by installing and monitoring a dispensing fore-line. Also, independent and dedicated chamber outlets, isolation valves, exhaust fore-lines, and exhaust pumps are provided that are activated for the specific gas when needed.

摘要翻译： 公开了使化学品和反应性气体的混合最小化的用于原子层沉积的装置和方法。 当通过安装和监测分配前线时和期望时，第一前体和第二前体仅与其它化学物质和反应性气体混合。 此外，还提供独立和专用的室出口，隔离阀，排气前端和排气泵，在需要时为特定气体启动。