公开(公告)号：US10115445B2

公开(公告)日：2018-10-30

申请号：US15741805

申请日：2016-06-27

Applicant: CROCUS Technology SA

Inventor： Quentin Stainer

IPC: G11C11/00 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22 ,  H01F10/32 ,  H01L43/02

Abstract: A magnetic memory device including a plurality of magnetic units, each unit including a first and second magnetic tunnel junctions—electrically connected in series by a current line and a strap. Each junction includes a first and second storage layer having a first and second storage magnetization and a first sense magnetic layer having a first and second senses magnetization. A field line is configured to provide an input signal generating a first and second magnetic field for varying the first and second sense magnetization. Each magnetic unit is provided with a data state such that the first and second storage magnetizations are aligned in opposed directions. The first and second magnetic field are adapted for varying respectively the first and second sense magnetization in a first and second direction opposed to the first direction.

公开(公告)号：US20170110172A1

公开(公告)日：2017-04-20

申请号：US15318715

申请日：2015-05-28

Applicant: CROCUS Technology SA

Inventor： Quentin Stainer

IPC: G11C11/16

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C11/5607

Abstract: A multibit MRAM cell including a magnetic tunnel junction including a sense layer having a freely orientable sense magnetization; a tunnel barrier layer; and a synthetic antiferromagnet storage layer having a first and second storage layer. The sense magnetization induces a dipolar field having a magnitude above a spin-flop field of the storage layer. The MRAM cell also includes aligning means for aligning the sense magnetization in a plurality of distinct orientations such as to encode a plurality of distinct logic states in the MRAM cell. The present disclosure also concerns a method for operating the multibit MRAM cell.

公开(公告)号：US09620187B2

公开(公告)日：2017-04-11

申请号：US14772916

申请日：2014-02-21

Applicant: Crocus Technology SA

Inventor： Quentin Stainer

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08

Abstract: Self-referenced magnetic random access memory (MRAM) cell including a magnetic tunnel junction including a sense layer; a storage layer having a storage magnetization; a tunnel barrier layer between the sense and the storage layers; and an antiferromagnetic layer exchange-coupling the storage layer such that the storage magnetization can be pinned when the antiferromagnetic layer is below a critical temperature and freely varied when the antiferromagnetic layer is heated at or above the critical temperature. The sense layer includes a first sense layer having a first sense magnetization, a second sense layer having a second sense magnetization and spacer layer between the first and second sense layers. The MRAM cell can be read with low power consumption.

公开(公告)号：US08743597B2

公开(公告)日：2014-06-03

申请号：US13711820

申请日：2012-12-12

Applicant: Crocus Technology SA

Inventor： Ioan Lucian Prejbeanu ,  Lucien Lombard ,  Quentin Stainer ,  Kenneth Mackay

IPC: G11C11/16 ,  G11C11/00 ,  G11C11/02 ,  G11C11/15

CPC classification number: G11C11/161 ,  G01R33/093 ,  G01R33/098 ,  G11C11/15 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08 ,  H01L43/10

Abstract: The present disclosure concerns a MRAM element comprising a magnetic tunnel junction comprising: a storage layer, a sense layer, and a tunnel barrier layer included between the storage layer and the sense layer; the storage layer comprising a first magnetic layer having a first storage magnetization; a second magnetic layer having a second storage magnetization; and a non-magnetic coupling layer separating the first and second magnetic layers such that the first storage magnetization is substantially antiparallel to the second storage magnetization; the first and second magnetic layers being arranged such that: at a read temperature the first storage magnetization is substantially equal to the second storage magnetization; and at a write temperature which is higher than the read temperature the second storage magnetization is larger than the first storage magnetization. The disclosed MRAM element generates a low stray field when the magnetic tunnel junction is cooled at a low temperature.

Abstract translation: 本公开涉及一种包括磁性隧道结的MRAM元件，包括：存储层，感测层和包括在存储层和感测层之间的隧道势垒层; 所述存储层包括具有第一存储磁化的第一磁性层; 具有第二存储磁化的第二磁性层; 以及分离所述第一和第二磁性层的非磁性耦合层，使得所述第一存储磁化基本上反平行于所述第二存储磁化; 第一和第二磁性层布置成使得在读取温度下，第一存储磁化基本上等于第二存储磁化; 并且在写入温度高于读取温度时，第二存储磁化强度大于第一存储磁化强度。 当磁性隧道结在低温下被冷却时，所公开的MRAM元件产生低杂散场。