公开(公告)号：US20130082741A1

公开(公告)日：2013-04-04

申请号：US13249604

申请日：2011-09-30

Applicant: Daniel Domes

Inventor： Daniel Domes

IPC: H03K5/153

CPC classification number: H03K17/18 ,  H03K17/13

Abstract: A circuit arrangement includes a reverse conducting transistor having a gate electrode and a load current path between an emitter and collector electrode. The transistor is configured to allow for conducting a load current in a forward direction and in a reverse direction through the load current path and activated or deactivated by a respective signal at the gate electrode. The circuit arrangement further includes a gate control unit and a monitoring unit. The gate control unit is connected to the gate electrode and configured to deactivate the transistor or prevent an activation of the transistor via the gate electrode when the transistor is in a reverse conducting state. The monitoring unit is configured to detect a sudden rise of a collector-emitter voltage of the reverse conducting transistor which occurs, when the load current crosses zero, while the transistor is deactivated or activation is prevented by the gate control unit.

Abstract translation: 电路装置包括具有栅电极和发射极和集电极之间的负载电流路径的反向导通晶体管。 晶体管被配置为允许通过负载电流路径在正向和反向导通负载电流，并且通过栅电极处的相应信号被激活或去激活。 电路装置还包括门控制单元和监视单元。 栅极控制单元连接到栅电极并且被配置为当晶体管处于反向导通状态时，使晶体管停止晶体管或经由栅极电极的激活。 监视单元被配置为检测当负载电流跨越零时发生的反向导通晶体管的集电极 - 发射极电压的突然上升，同时晶体管被禁用或门控制单元的启动被阻止。

公开(公告)号：US08155916B2

公开(公告)日：2012-04-10

申请号：US12168369

申请日：2008-07-07

Applicant: Patrick Baginski ,  Reinhold Bayerer ,  Holger Ruething ,  Daniel Domes

Inventor： Patrick Baginski ,  Reinhold Bayerer ,  Holger Ruething ,  Daniel Domes

IPC: G01K7/16

CPC classification number: H01L23/34 ,  H01L23/647 ,  H01L27/0248 ,  H01L29/0696 ,  H01L29/42312 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One embodiment provides a circuit arrangement integrated in a semiconductor body. At least one power semiconductor component integrated in the semiconductor body and having a control connection and a load connection is provided. A resistance component is thermally coupled to the power semiconductor component and likewise integrated into the semiconductor body and arranged between the control connection and the load connection of the power semiconductor component. The resistance component has a temperature-dependent resistance characteristic curve. A driving and evaluation unit is designed to evaluate the current through the resistance component or the voltage drop across the resistance component and provides a temperature signal dependent thereon.

Abstract translation: 一个实施例提供集成在半导体本体中的电路装置。 提供集成在半导体本体中并且具有控制连接和负载连接的至少一个功率半导体部件。 电阻分量热耦合到功率半导体部件，并且同样集成到半导体本体中并且布置在功率半导体部件的控制连接和负载连接之间。 电阻分量具有温度依赖性电阻特性曲线。 驱动和评估单元被设计为评估通过电阻分量的电流或电阻分量两端的电压降，并提供依赖于其的温度信号。

公开(公告)号：US20110254018A1

公开(公告)日：2011-10-20

申请号：US13086639

申请日：2011-04-14

Applicant: Daniel Domes ,  Uwe Jansen

Inventor： Daniel Domes ,  Uwe Jansen

IPC: H01L29/12 ,  H01L21/02

CPC classification number: H03K17/063 ,  H03K2017/066 ,  H03K2017/6875 ,  Y10T29/41

Abstract: A semiconductor switching arrangement includes a normally on semiconductor component of a first conduction type and a normally off semiconductor component of a second conduction type which is the complement of the first conduction type. A load path of the normally off semiconductor component is connected in series with the load path of the normally on semiconductor component. A first actuation circuit connected between the control connection of the normally on semiconductor component and a load path connection of the normally on semiconductor component. The load path connection of the normally on semiconductor component is arranged between the normally on and normally off semiconductor components. A second actuation circuit is connected between the control connection of the normally off semiconductor component and a load path connection of the normally off semiconductor component. The load path connection of the normally off semiconductor component is arranged between the normally on and normally off semiconductor components.

Abstract translation: 半导体开关装置包括作为第一导电类型的互补的第二导电类型的常开半导体元件和第二导电类型的常关半导体元件。 常关半导体部件的负载路径与正常导通的半导体部件的负载路径串联连接。 连接在正常导通半导体部件的控制连接和正常导通的半导体部件的负载路径连接之间的第一致动电路。 正常导通的半导体部件的负载路径连接被布置在正常和常关的半导体部件之间。 第二驱动电路连接在常关半导体部件的控制连接和常关半导体部件的负载路径连接之间。 正常关闭半导体部件的负载路径连接被布置在正常关闭和常关的半导体部件之间。

公开(公告)号：US20110216561A1

公开(公告)日：2011-09-08

申请号：US13040348

申请日：2011-03-04

Applicant: Reinhold Bayerer ,  Daniel Domes

Inventor： Reinhold Bayerer ,  Daniel Domes

IPC: H02M7/493

CPC classification number: H02M7/003 ,  H01L25/162 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A power semiconductor assembly includes at least two bridge branches each including at least two circuit breakers connected to a phase output. Each of the circuit breakers has at least two parallel-connected switching elements integrated into a semiconductor chip. Each of the circuit breakers is arranged in a power semiconductor module and the individual power semiconductor modules are arranged adjacent to one another in a first direction. The semiconductor chips of a particular circuit breaker are arranged adjacent to one another in the corresponding power semiconductor module in a second direction extending perpendicular to the first direction.

Abstract translation: 功率半导体组件包括至少两个电桥分支，每个至少两个电桥分支包括连接到相位输出的至少两个断路器。 每个断路器具有集成到半导体芯片中的至少两个并联的开关元件。 每个断路器布置在功率半导体模块中，并且各个功率半导体模块在第一方向上彼此相邻布置。 特定断路器的半导体芯片在垂直于第一方向延伸的第二方向上在相应的功率半导体模块中彼此相邻布置。