摘要:
One embodiment provides a circuit arrangement integrated in a semiconductor body. At least one power semiconductor component integrated in the semiconductor body and having a control connection and a load connection is provided. A resistance component is thermally coupled to the power semiconductor component and likewise integrated into the semiconductor body and arranged between the control connection and the load connection of the power semiconductor component. The resistance component has a temperature-dependent resistance characteristic curve. A driving and evaluation unit is designed to evaluate the current through the resistance component or the voltage drop across the resistance component and provides a temperature signal dependent thereon.
摘要:
One embodiment provides a semiconductor chip including a semiconductor body and a power semiconductor component integrated therein. The power semiconductor component includes a load electrode zone arranged on a first surface of the semiconductor body, a control electrode zone arranged on the first surface, the control electrode zone being electrically insulated from the load electrode zone, and a resistance track arranged on the load electrode zone and the control electrode zone. The resistance track ensures an electrical connection between the load electrode zone and the control electrode zone.
摘要:
One embodiment provides a semiconductor chip including a semiconductor body and a power semiconductor component integrated therein. The power semiconductor component includes a load electrode zone arranged on a first surface of the semiconductor body, a control electrode zone arranged on the first surface, the control electrode zone being electrically insulated from the load electrode zone, and a resistance track arranged on the load electrode zone and the control electrode zone. The resistance track ensures an electrical connection between the load electrode zone and the control electrode zone.
摘要:
One embodiment provides a circuit arrangement integrated in a semiconductor body. At least one power semiconductor component integrated in the semiconductor body and having a control connection and a load connection is provided. A resistance component is thermally coupled to the power semiconductor component and likewise integrated into the semiconductor body and arranged between the control connection and the load connection of the power semiconductor component. The resistance component has a temperature-dependent resistance characteristic curve. A driving and evaluation unit is designed to evaluate the current through the resistance component or the voltage drop across the resistance component and provides a temperature signal dependent thereon.
摘要:
According to one embodiment of a capacitor module, the capacitor module includes a substrate having a metallization on a first side of the substrate, a plurality of connectors electrically coupled to the metallization and a plurality of capacitors disposed on the metallization. The plurality of capacitors includes a first set of capacitors electrically connected in parallel between a first set of the connectors and a second set of the connectors. The capacitor module further includes a housing enclosing the plurality of capacitors within the capacitor module.
摘要:
According to one embodiment of a capacitor module, the capacitor module includes a substrate having a metallization on a first side of the substrate, a plurality of connectors electrically coupled to the metallization and a plurality of capacitors disposed on the metallization. The plurality of capacitors includes a first set of capacitors electrically connected in parallel between a first set of the connectors and a second set of the connectors. The capacitor module further includes a housing enclosing the plurality of capacitors within the capacitor module.
摘要:
According to one embodiment of a module, the module includes a plurality of gate driver chips coupled in parallel and having a common gate input, a common supply voltage and a common output. The chips are spaced apart from one another and have a combined width extending between an edge of a first outer one of the chips and an opposing edge of a second outer one of the chips. The module further includes a plurality of capacitors coupled in parallel between ground and the common supply voltage, and a transverse electromagnetic (TEM) transmission line medium coupled to the common output of the chips and having a current flow direction perpendicular to the combined width of the chips.
摘要:
According to one embodiment of a module, the module includes a plurality of gate driver chips coupled in parallel and having a common gate input, a common supply voltage and a common output. The chips are spaced apart from one another and have a combined width extending between an edge of a first outer one of the chips and an opposing edge of a second outer one of the chips. The module further includes a plurality of capacitors coupled in parallel between ground and the common supply voltage, and a transverse electromagnetic (TEM) transmission line medium coupled to the common output of the chips and having a current flow direction perpendicular to the combined width of the chips.
摘要:
A power semiconductor assembly includes at least two bridge branches each including at least two circuit breakers connected to a phase output. Each of the circuit breakers has at least two parallel-connected switching elements integrated into a semiconductor chip. Each of the circuit breakers is arranged in a power semiconductor module and the individual power semiconductor modules are arranged adjacent to one another in a first direction. The semiconductor chips of a particular circuit breaker are arranged adjacent to one another in the corresponding power semiconductor module in a second direction extending perpendicular to the first direction.