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    ORGANIC/INORGANIC COMPOSITE SEPARATOR AND ELECTROCHEMICAL DEVICE CONTAINING THE SAME
    21.
    发明申请
    ORGANIC/INORGANIC COMPOSITE SEPARATOR AND ELECTROCHEMICAL DEVICE CONTAINING THE SAME 有权
    有机/无机复合分离器及其电化学装置

    公开(公告)号：US20090246613A1

    公开(公告)日：2009-10-01

    申请号：US12158936

    申请日：2008-03-06

    Applicant: Jong-Hyeok Park ,  Sang-Young Lee ,  Jang-Hyuk Hong ,  Moon-Ja Nam ,  Jung-A Yoo ,  Sang-Seop Kim ,  Chang-Hun Han

    Inventor： Jong-Hyeok Park ,  Sang-Young Lee ,  Jang-Hyuk Hong ,  Moon-Ja Nam ,  Jung-A Yoo ,  Sang-Seop Kim ,  Chang-Hun Han

    IPC: H01M2/16

    CPC classification number: H01M2/166 ,  H01M2/16 ,  H01M2/1686 ,  H01M10/052

    Abstract: An organic/inorganic composite separator includes a porous substrate having a plurality of pores; and a porous coating layer formed on at least one surface of the porous substrate with a plurality of inorganic particles and a binder polymer. The binder polymer is a copolymer including: (a) a first monomer unit having a contact angle to a water drop in the range from 0° to 49°; and (b) a second monomer unit having a contact angle to a water drop in the range from 50° to 130°. This organic/inorganic composite separator has excellent thermal stability, so it may restrain an electric short circuit between a cathode and an anode. In addition, the separator may prevent inorganic particles in the porous coating layer from being extracted during an assembling process of an electrochemical device, thereby improving stability of an electrochemical device.

    Abstract translation: 有机/无机复合隔膜包括具有多个孔的多孔基材; 以及在多孔基材的至少一个表面上形成有多个无机颗粒和粘合剂聚合物的多孔涂层。 粘合剂聚合物是共聚物，其包含：（a）与0〜49°的水滴接触角的第一单体单元; 和（b）第二单体单元，其具有与水滴在50°至130°范围内的接触角。 该有机/无机复合隔膜具有优异的热稳定性，因此可以抑制阴极与阳极之间的电短路。 此外，隔膜可以防止多孔涂层中的无机颗粒在电化学装置的组装过程中被提取，从而提高电化学装置的稳定性。

    ACRYLIC COPOLYMER AND OPTICAL FILM INCLUDING THE SAME
    24.
    发明申请
    ACRYLIC COPOLYMER AND OPTICAL FILM INCLUDING THE SAME 审中-公开
    丙烯酸共聚物和光学膜，包括它们

    公开(公告)号：US20130158201A1

    公开(公告)日：2013-06-20

    申请号：US13805224

    申请日：2011-06-14

    Applicant: Byoung-Il Kang ,  Chang-Hun Han

    Inventor： Byoung-Il Kang ,  Chang-Hun Han

    IPC: C08F22/10

    CPC classification number: C08F22/10 ,  C08F220/18 ,  C08J5/18 ,  C08J2333/06 ,  G02B5/3083 ,  G02F1/13363

    Abstract: Provided are a heat resistant, high strength acrylic copolymer and an optical film including the same, and more particularly, an acrylic copolymer polymerized by including (1) an alkyl(meth)acrylate-based monomer excluding a tert-butyl(meth)acrylate-based monomer, (2) a (meth)acrylate-based monomer including an aliphatic ring and/or an aromatic ring, and (3) a tert-butyl(meth)acrylate-based monomer. The acrylic copolymer according to the present invention has excellent heat resistance as well as transparency being maintained. Also, the optical film including a compounding resin including the acrylic copolymer has excellent transparency, heat resistance, processability, adhesiveness, retardation properties, and durability.

    Abstract translation: 本发明提供耐热性高强度丙烯酸类共聚物和含有该共聚物的光学膜，更具体地说，包括（1）除（甲基）丙烯酸叔丁酯以外的（甲基）丙烯酸烷基酯系单体， （2）包含脂肪族环和/或芳香环的（甲基）丙烯酸酯类单体，和（3）（甲基）丙烯酸叔丁酯系单体。 根据本发明的丙烯酸共聚物具有优异的耐热性和保持透明性。 此外，包括具有丙烯酸共聚物的配混树脂的光学膜具有优异的透明性，耐热性，加工性，粘合性，延迟性和耐久性。

    Image sensor and method for manufacturing the same
    25.
    发明授权
    Image sensor and method for manufacturing the same 有权
    图像传感器及其制造方法

    公开(公告)号：US08278614B2

    公开(公告)日：2012-10-02

    申请号：US12576489

    申请日：2009-10-09

    Applicant: Chang-Hun Han

    Inventor： Chang-Hun Han

    IPC: H01L31/02

    CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14687

    Abstract: An image sensor and a method of manufacturing an image sensor. An image sensor may include a readout circuitry having a metal line on and/or over a first substrate. An image sensor may include an image sensing part having a first conductive-type conductive layer and/or a second conductive-type conductive layer over a metal line. An image sensor may include a pixel division area formed on and/or over an image sensing part corresponding to a pixel boundary. An image sensor may include a ground contact on and/or over a pixel division area. An image sensor may include a contact plug connected with a sidewall of an image sensing part. A method of manufacturing an image sensor is disclosed.

    Abstract translation: 图像传感器和图像传感器的制造方法。 图像传感器可以包括在第一基板上和/或上方具有金属线的读出电路。 图像传感器可以包括在金属线上具有第一导电型导电层和/或第二导电型导电层的图像感测部件。 图像传感器可以包括形成在对应于像素边界的图像感测部分上和/或上方的像素分割区域。 图像传感器可以包括在像素分割区域上和/或上方的像素分割区域上的接地接触。 图像传感器可以包括与图像感测部件的侧壁连接的接触插塞。 公开了一种制造图像传感器的方法。

    Image sensor and method for manufacturing the same
    27.
    发明授权
    Image sensor and method for manufacturing the same 有权
    图像传感器及其制造方法

    公开(公告)号：US07883922B2

    公开(公告)日：2011-02-08

    申请号：US12046134

    申请日：2008-03-11

    Applicant: Chang-Hun Han

    Inventor： Chang-Hun Han

    IPC: H01L21/00

    CPC classification number: H01L27/14689 ,  H01L27/14603 ,  H01L27/14641 ,  H01L27/14643

    Abstract: An image sensor and a method for manufacturing an image sensor that has an increased aspect ratio. An image sensor and a method for manufacturing an image sensor that have a relatively large process margin (e.g. even in high level pixels), which may reduce and/or eliminate restrictions in downscaling an image sensor. An image sensor may include at least one of a first unit pixel including a first transfer transistor, a second unit pixel including a second drive transistor, and a contact electrically connecting a floating diffusion region of the first unit pixel with the second drive transistor of the second unit pixel. A method of manufacturing an image sensor including at least one of forming a first unit pixel including a first transfer transistor, forming a second unit pixel including a second drive transistor, and forming a contact electrically connecting a floating diffusion region of the first unit pixel with the second drive transistor of the second unit pixel.

    Abstract translation: 一种具有增加的纵横比的图像传感器和图像传感器的制造方法。 用于制造具有相对较大的处理余量（例如甚至高水平像素）的图像传感器的图像传感器和方法，其可以减少和/或消除降低图像传感器的限制。 图像传感器可以包括包括第一传输晶体管的第一单位像素，包括第二驱动晶体管的第二单位像素和将第一单位像素的浮动扩散区电连接到第二驱动晶体管的第二驱动晶体管中的至少一个 第二单位像素。 一种制造图像传感器的方法，包括形成包括第一转移晶体管的第一单位像素，形成包括第二驱动晶体管的第二单位像素和形成将第一单位像素的浮动扩散区域电连接的接点中的至少一个， 第二单位像素的第二驱动晶体管。

    IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME
    29.
    发明申请
    IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    图像传感器及其制造方法

    公开(公告)号：US20090114964A1

    公开(公告)日：2009-05-07

    申请号：US12258417

    申请日：2008-10-26

    Applicant: Chang-Hun Han

    Inventor： Chang-Hun Han

    IPC: H01L31/00 ,  H01L21/00

    CPC classification number: H01L27/14687 ,  H01L27/14636

    Abstract: An image sensor includes a first substrate having a lower wiring line and electric circuitry formed therein, a bonding layer formed over the first substrate, a second substrate bonded to the first substrate via the bonding layer, a vertical-type photodiode formed in the second substrate, and a contact plug formed in the photodiode and the bonding layer and electrically connected to the lower wiring line.

    Abstract translation: 图像传感器包括：第一基板，具有形成在其中的下布线和电路;形成在第一基板上的接合层，经由接合层接合到第一基板的第二基板;形成在第二基板中的垂直型光电二极管 以及形成在光电二极管和接合层中并且电连接到下布线的接触插塞。

    IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME
    30.
    发明申请
    IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME 有权
    图像传感器及其制造方法

    公开(公告)号：US20080224189A1

    公开(公告)日：2008-09-18

    申请号：US12046134

    申请日：2008-03-11

    Applicant: Chang-Hun Han

    Inventor： Chang-Hun Han

    IPC: H01L27/146 ,  H01L31/18

    CPC classification number: H01L27/14689 ,  H01L27/14603 ,  H01L27/14641 ,  H01L27/14643

    Abstract: An image sensor and a method for manufacturing an image sensor that has an increased aspect ratio. An image sensor and a method for manufacturing an image sensor that have a relatively large process margin (e.g. even in high level pixels), which may reduce and/or eliminate restrictions in downscaling an image sensor. An image sensor may include at least one of a first unit pixel including a first transfer transistor, a second unit pixel including a second drive transistor, and a contact electrically connecting a floating diffusion region of the first unit pixel with the second drive transistor of the second unit pixel. A method of manufacturing an image sensor including at least one of forming a first unit pixel including a first transfer transistor, forming a second unit pixel including a second drive transistor, and forming a contact electrically connecting a floating diffusion region of the first unit pixel with the second drive transistor of the second unit pixel.

    Abstract translation: 一种具有增加的纵横比的图像传感器和图像传感器的制造方法。 用于制造具有相对较大的处理余量（例如甚至高水平像素）的图像传感器的图像传感器和方法，其可以减少和/或消除降低图像传感器的限制。 图像传感器可以包括包括第一传输晶体管的第一单位像素，包括第二驱动晶体管的第二单位像素和将第一单位像素的浮动扩散区电连接到第二驱动晶体管的第二驱动晶体管中的至少一个 第二单位像素。 一种制造图像传感器的方法，包括形成包括第一转移晶体管的第一单位像素，形成包括第二驱动晶体管的第二单位像素和形成将第一单位像素的浮动扩散区域电连接的接点中的至少一个， 第二单位像素的第二驱动晶体管。

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