公开(公告)号：US20190140156A1

公开(公告)日：2019-05-09

申请号：US16229419

申请日：2018-12-21

Applicant: FUJIFILM Corporation

Inventor： Hiroki SUGIURA ,  Yoshinori KANAZAWA ,  Kimiatsu NOMURA

IPC: H01L35/28 ,  H01L35/22 ,  H01L35/24 ,  C01B32/174

Abstract: An object of the present invention is to provide a semiconductor layer (p-type semiconductor layer) which demonstrate an excellent thermoelectric conversion performance and exhibits p-type characteristics. Another object of the present invention is to provide a thermoelectric conversion layer formed of the p-type semiconductor layer and a composition for forming a p-type semiconductor layer. Still another object of the present invention is to provide a thermoelectric conversion element, which has the thermoelectric conversion layer as a p-type thermoelectric conversion layer, and a thermoelectric conversion module.The p-type semiconductor layer of the embodiment of the present invention contains a nanocarbon material and at least one kind of onium salt selected from the group consisting of compounds represented by Formula (1) to Formula (4).

公开(公告)号：US20190074452A1

公开(公告)日：2019-03-07

申请号：US16180118

申请日：2018-11-05

Applicant: FUJIFILM Corporation ,  The University of Tokyo

Inventor： Hiroaki TSUYAMA ,  Kimiatsu NOMURA ,  Yoshihisa USAMI ,  Masatoshi YUMOTO ,  Tetsu KITAMURA ,  Masashi KOYANAGI ,  Tetsuya WATANABE ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC: H01L51/00 ,  C09D5/24 ,  C07D495/14 ,  C09B57/00 ,  H01L51/05

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)

公开(公告)号：US20190006570A1

公开(公告)日：2019-01-03

申请号：US16124289

申请日：2018-09-07

Applicant: FUJIFILM Corporation

Inventor： Hiroki SUGIURA ,  Yoshinori KANAZAWA ,  Naoyuki HAYASHI ,  Kimiatsu NOMURA

IPC: H01L35/08 ,  H01L35/24 ,  H01L35/32 ,  H01L35/34 ,  H01L51/00

Abstract: An object of the present invention is to provide a thermoelectric conversion element having excellent thermoelectric conversion performance and excellent high-temperature durability, a method for manufacturing the thermoelectric conversion element, a thermoelectric conversion module, and a method for manufacturing the thermoelectric conversion module. A thermoelectric conversion element of the present invention has a thermoelectric conversion layer containing an organic thermoelectric conversion material and a dopant, a pair of electrodes disposed at positions separated from each other, and a buffer layer which is disposed between the thermoelectric conversion layer and each of the electrodes and electrically connects the thermoelectric conversion layer and the electrodes to each other, in which the buffer layer contains the same material as the organic thermoelectric conversion material contained in the thermoelectric conversion layer, the buffer layer does not contain a dopant or contains a dopant, and in a case where the buffer layer contains a dopant, a ratio of the dopant contained in the buffer layer to the dopant contained in the thermoelectric conversion layer is equal to or lower than 0.1.

公开(公告)号：US20180366632A1

公开(公告)日：2018-12-20

申请号：US16004749

申请日：2018-06-11

Applicant: FUJIFILM Corporation

Inventor： Yoshinori KANAZAWA ,  Yuzo NAGATA ,  Hiroki SUGIURA ,  Naoyuki HAYASHI ,  Kimiatsu NOMURA

IPC: H01L35/24

Abstract: An object of the present invention is to provide a thermoelectric conversion layer, which has a high power factor and a low thermal conductivity and exhibits the characteristics of an n-type excellently maintaining performance stability even being exposed to a high temperature for a long period of time, a thermoelectric conversion element having the thermoelectric conversion layer as an n-type thermoelectric conversion layer, and a composition for forming a thermoelectric conversion layer used for forming the thermoelectric conversion layer.The thermoelectric conversion layer of the present invention contains a carbon nanotube-containing n-type thermoelectric conversion material and a hydrogen bonding resin.

公开(公告)号：US20170012220A1

公开(公告)日：2017-01-12

申请号：US15274016

申请日：2016-09-23

Applicant: FUJIFILM Corporation ,  The University of Tokyo

Inventor： Hiroaki TSUYAMA ,  Kimiatsu NOMURA ,  Yoshihisa USAMI ,  Masatoshi YUMOTO ,  Tetsu KITAMURA ,  Masashi KOYANAGI ,  Tetsuya WATANABE ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC: H01L51/00 ,  C07D495/14 ,  C09D5/24

CPC classification number: H01L51/0074 ,  C07D495/14 ,  C09B57/00 ,  C09D5/24 ,  H01L51/0007 ,  H01L51/0558 ,  Y02E10/549 ,  Y02P70/521

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)

Abstract translation: （式（2）中，R 11和R 12各自独立地表示氢原子，烷基，烯基，炔基或烷氧基，可以具有取代基，式（2）中的芳香族部分可以 被卤素原子取代）

公开(公告)号：US20140290746A1

公开(公告)日：2014-10-02

申请号：US14301796

申请日：2014-06-11

Applicant: FUJIFILM Corporation

Inventor： Yukio TANI ,  Katsumi KOBAYASHI ,  Kimiatsu NOMURA

IPC: H01G9/20 ,  C09B57/10

CPC classification number: H01G9/2059 ,  C07D213/79 ,  C07D401/04 ,  C07D409/14 ,  C09B57/10 ,  Y02E10/542

Abstract: A photoelectric conversion element, having: an electrically-conductive support; a photoconductor layer having a semiconductor fine-particle layer adsorbed a dye; a charge transfer layer containing an electrolyte; and a counter electrode; which are provided on one side of the support in this order, in which the dye has at least one terdentate ligand having at least one acidic group; at least one ligand coordinating to a metal atom M has an sp2 carbon atom; a cyclic group binds to the sp2 carbon atom; a specific substituent R is substituted at an atom of α- or β-position to the atom of the cyclic group directly binding to the sp2 carbon atom; and with the metal atom M, an atom G1 of the α- or β-position, and an atom G2 of the substituent R, an angle θ (∠ZMG1G2) is 150° or less.

Abstract translation: 一种光电转换元件，具有：导电支撑体; 具有吸附染料的半导体细粒层的感光体层; 含有电解质的电荷转移层; 和对电极; 其中所述染料具有至少一个具有至少一个酸性基团的特定配位体; 与金属原子M配位的至少一个配体具有sp2碳原子; 环状基团与sp2碳原子结合; 特定取代基R在直接与sp 2碳原子结合的环状基团的原子上被α-或β-位的原子取代; 并且与金属原子M一起形成α-或β-元素的原子G1，取代基R的原子G2，角度＆amp; （∠ZMG1G2）为150°以下。

公开(公告)号：US20130181202A1

公开(公告)日：2013-07-18

申请号：US13789537

申请日：2013-03-07

Applicant: FUJIFILM CORPORATION

Inventor： Katsuyuki YOFU ,  Kimiatsu NOMURA ,  Eiji FUKUZAKI ,  Yuki HIRAI ,  Mitsumasa HAMANO ,  Tetsuro MITSUI

IPC: H01L51/00

CPC classification number: H01L51/0072 ,  C07C225/22 ,  C07D219/02 ,  C07D221/18 ,  C07D455/03 ,  C07D455/06 ,  C07D471/14 ,  C07D471/16 ,  C09B21/00 ,  C09B23/04 ,  C09B57/008 ,  H01L51/0052 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/0094 ,  H01L51/4206 ,  H01L51/4273 ,  Y02E10/549

Abstract: There is provided a compound represented by a specific formula, which has an absorption maximum at 400 nm or more and less than 720 nm in a UV-visible absorption spectrum, wherein a molar extinction coefficient is 10,000 mol−1·l·cm−1 or more at the absorption maximum wavelength, and a difference between a melting point and a deposition temperature (a melting point−a deposition temperature) is 31° C. or more.

Abstract translation: 提供一种具有特定化学式的化合物，其在紫外可见吸收光谱中在400nm以上且小于720nm处具有吸收最大值，其摩尔消光系数为10,000mol -1·l·cm -1 以上的吸收最大波长，熔点与沉积温度（熔点 - 沉积温度）之间的差为31℃以上。