公开(公告)号：US20200035419A1

公开(公告)日：2020-01-30

申请号：US16590400

申请日：2019-10-02

Applicant: FUJIFILM Corporation

Inventor： Hirotaka SATO ,  Kenji SHIROKANE ,  Kimiatsu NOMURA

IPC: H01G9/20 ,  H01L51/00

Abstract: A photoelectric conversion element includes a first electrode that has a photosensitive layer containing a light absorbing agent on a conductive support; and a second electrode that is opposite to the first electrode, in which the light absorbing agent contains a perovskite compound, and a compound represented by Formula (A-0), (G)p-L,   Formula (A-0) in the formula, G represents a group or a salt such as —P(═O)(ORa)2 and —P(═O)(O−Ya+)2; Ra represents a hydrogen atom or a substituent; Ya represents a counter salt; p is an integer of 1 or more; and L represents an aliphatic hydrocarbon group not having an amino group.

公开(公告)号：US20180294396A1

公开(公告)日：2018-10-11

申请号：US16009509

申请日：2018-06-15

Applicant: FUJIFILM Corporation

Inventor： Yoshinori KANAZAWA ,  Yuzo NAGATA ,  Hiroki SUGIURA ,  Naoyuki HAYASHI ,  Kimiatsu NOMURA

IPC: H01L35/24 ,  H01L35/32 ,  H01L35/34

CPC classification number: H01L35/24 ,  B82Y30/00 ,  C07C211/07 ,  C07C211/08 ,  C07C215/08 ,  C07C215/12 ,  C07C291/04 ,  H01L35/22 ,  H01L35/32 ,  H01L35/34 ,  Y10S977/742 ,  Y10S977/948

Abstract: An object of the present invention is to provide an n-type thermoelectric conversion layer, which has a high power factor and exhibits excellent performance stability, a thermoelectric conversion element including the n-type thermoelectric conversion layer, and a composition for forming an n-type thermoelectric conversion layer used in the n-type thermoelectric conversion layer. The n-type thermoelectric conversion layer of the present invention contains carbon nanotubes and an amine compound which is represented by General Formula (1) or (2) and has a ClogP value of 2.0 to 8.2.

公开(公告)号：US20180226589A1

公开(公告)日：2018-08-09

申请号：US15943968

申请日：2018-04-03

Applicant: FUJIFILM Corporation ,  The University of Tokyo

Inventor： Hiroaki TSUYAMA ,  Kimiatsu NOMURA ,  Yoshihisa USAMI ,  Masatoshi YUMOTO ,  Tetsu KITAMURA ,  Masashi KOYANAGI ,  Tetsuya WATANABE ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC: H01L51/00 ,  C09D5/24 ,  C07D495/14 ,  C09B57/00 ,  H01L51/05

CPC classification number: H01L51/0074 ,  C07D495/14 ,  C09B57/00 ,  C09D5/24 ,  H01L51/0007 ,  H01L51/0558 ,  Y02E10/549 ,  Y02P70/521

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)

公开(公告)号：US20160013390A1

公开(公告)日：2016-01-14

申请号：US14862264

申请日：2015-09-23

Applicant: FUJIFILM Corporation

Inventor： Ryo NISHIO ,  Ryo HAMASAKI ,  Kimiatsu NOMURA ,  Yoichi MARUYAMA

IPC: H01L35/24 ,  H01L35/32

CPC classification number: H01L35/24 ,  C08G61/124 ,  C08G61/126 ,  C08G61/128 ,  C08G2261/11 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/1424 ,  C08G2261/1426 ,  C08G2261/1428 ,  C08G2261/148 ,  C08G2261/228 ,  C08G2261/312 ,  C08G2261/3142 ,  C08G2261/3162 ,  C08G2261/3221 ,  C08G2261/3223 ,  C08G2261/3243 ,  C08G2261/3244 ,  C08G2261/55 ,  H01L35/14 ,  H01L35/20 ,  H01L35/32

Abstract: A thermoelectric conversion element 1 having, on a substrate 12, a first electrode 13, a thermoelectric conversion layer 14, and a second electrode 15, wherein a nano conductive material and a low band gap material are contained in the thermoelectric conversion layer 14; an article for thermoelectric power generation and a power supply for a sensor using the thermoelectric conversion element 1; and a thermoelectric conversion material containing the nano conductive material and the low band gap material.

Abstract translation: 在基板12上具有第一电极13，热电转换层14和第二电极15的热电转换元件1，其中纳米导电材料和低带隙材料包含在热电转换层14中; 用于热电发电的物品和使用该热电转换元件1的传感器的电源; 以及含有纳米导电材料和低带隙材料的热电转换材料。

公开(公告)号：US20200066958A1

公开(公告)日：2020-02-27

申请号：US16669355

申请日：2019-10-30

Applicant: FUJIFILM Corporation

Inventor： Yuzo NAGATA ,  Hiroki SUGIURA ,  Naoyuki HAYASHI ,  Kimiatsu NOMURA

IPC: H01L35/22 ,  H01L35/24 ,  B82Y30/00 ,  C08L101/00 ,  C08K3/04

Abstract: The present invention provides an n-type thermoelectric conversion layer, which has excellent electric conductivity and thermoelectromotive force and is inhibited from experiencing a change of the thermoelectromotive force even in a high-temperature environment, a thermoelectric conversion element having the n-type thermoelectric conversion layer, and a composition for forming an n-type thermoelectric conversion layer. A thermoelectric conversion element of the present invention has an n-type thermoelectric conversion layer and a p-type thermoelectric conversion layer electrically connected to the n-type thermoelectric conversion layer, in which the n-type thermoelectric conversion layer contains carbon nanotubes and a compound containing a repeating unit represented by Formula (1). In Formula (1), L1 represents a divalent hydrocarbon group. n represents an integer of equal to or greater than 2.X represents —O—, —CH(OH)—, —S—, —OC(═O)O—, —C(═O)—, —OC(═O)—, or a divalent group containing an amide group.

公开(公告)号：US20170179362A1

公开(公告)日：2017-06-22

申请号：US15452233

申请日：2017-03-07

Applicant: FUJIFILM Corporation

Inventor： Yuzo NAGATA ,  Hiroki SUGIURA ,  Naoyuki HAYASHI ,  Kimiatsu NOMURA

IPC: H01L35/22 ,  H01L35/34 ,  H01L35/24 ,  C08K7/24 ,  H01L35/26

CPC classification number: H01L35/22 ,  B82Y30/00 ,  C08K3/041 ,  C08K2201/001 ,  C08K2201/011 ,  C08L101/00 ,  C09D133/06 ,  H01L35/24

Abstract: The present invention provides an n-type thermoelectric conversion layer, which has excellent electric conductivity and thermoelectromotive force and is inhibited from experiencing a change of the thermoelectromotive force even in a high-temperature environment, a thermoelectric conversion element having the n-type thermoelectric conversion layer, and a composition for forming an n-type thermoelectric conversion layer. A thermoelectric conversion element of the present invention has an n-type thermoelectric conversion layer and a p-type thermoelectric conversion layer electrically connected to the n-type thermoelectric conversion layer, in which the n-type thermoelectric conversion layer contains carbon nanotubes and a compound containing a repeating unit represented by Formula (1). L1-Xn   Formula (1) In Formula (1), L1 represents a divalent hydrocarbon group. n represents an integer of equal to or greater than 2.X represents —O—, —CH(OH)—, —S—, —OC(═O)O—, —C(═O)—, —OC(═O)—, or a divalent group containing an amide group.

公开(公告)号：US20170179361A1

公开(公告)日：2017-06-22

申请号：US15449032

申请日：2017-03-03

Applicant: FUJIFILM Corporation

Inventor： Hiroki SUGIURA ,  Yuzo NAGATA ,  Kimiatsu NOMURA ,  Toshiaki AOAI

IPC: H01L35/22 ,  H01L35/34 ,  H01L35/32 ,  H01L35/24 ,  H01L35/26

CPC classification number: H01L35/22 ,  B82Y30/00 ,  B82Y40/00 ,  H01L35/24 ,  H01L35/26 ,  H01L35/32 ,  H01L35/34 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/892 ,  Y10S977/948

Abstract: A thermoelectric conversion layer contains carbon nanotubes and a surfactant, and in an upper portion and a lower portion and/or a side face end surface and a center, a mass ratio obtained by dividing the carbon nanotubes by the surfactant is higher in the upper portion and/or the end surface than in the other portions. A layer which contains carbon nanotubes and a surfactant and will become a thermoelectric conversion element is formed, the layer is washed with a washing agent which dissolves the surfactant but does not dissolve the carbon nanotubes. Accordingly, provided is a thermoelectric conversion element and a thermoelectric conversion module, each having not only high adhesiveness between the substrate and the thermoelectric conversion layer but also excellent thermoelectric conversion performance; and methods for manufacturing the thermoelectric conversion element and the thermoelectric conversion module.

公开(公告)号：US20170018724A1

公开(公告)日：2017-01-19

申请号：US15274062

申请日：2016-09-23

Applicant: FUJIFILM Corporation ,  The University of Tokyo

Inventor： Hiroaki TSUYAMA ,  Kimiatsu NOMURA ,  Yoshihisa USAMI ,  Eiji FUKUZAKI ,  Masashi KOYANAGI ,  Tetsu KITAMURA ,  Tetsuya WATANABE ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC: H01L51/00 ,  C07D495/14 ,  C07D517/14 ,  C09D5/24

CPC classification number: H01L51/0074 ,  C07D493/14 ,  C07D495/14 ,  C07D497/14 ,  C07D513/14 ,  C07D517/14 ,  C07D519/00 ,  C09B57/00 ,  C09D5/24 ,  H01L51/0003 ,  H01L51/0068 ,  H01L51/0071 ,  H01L51/0545 ,  H01L51/0558 ,  Y02E10/549 ,  Y02P70/521

Abstract: Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material. (X represents an oxygen, sulfur, selenium, or tellurium atom or NR5; Y and Z each represents CR6, an oxygen, sulfur, selenium, or nitrogen atom, or NR7; a ring containing Y and Z is an aromatic heterocycle; any one of R1 and R2 and the aromatic heterocycle containing Y and Z or any one of R3 and R4 and a benzene ring may be bonded to each other through a specific divalent linking group; R1, R2, and R5 to R8 each represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group; R3 and R4 each represent an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or heteroaryl group; and each of m and n is an integer of 0 to 2.)

Abstract translation: （X表示氧，硫，硒或碲原子或NR5; Y和Z各自表示CR6，氧，硫，硒或氮原子或NR7;含有Y和Z的环是芳香族杂环;任何一种 的R 1和R 2以及含有Y和Z的芳族杂环或者R 3和R 4中的任何一个和苯环可以通过特定的二价连接基彼此键合; R 1，R 2和R 5至R 8各自表示氢原子， 烷基，烯基，炔基，芳基或杂芳基; R 3和R 4各自表示烷基，烯基，炔基，芳基或杂芳基; m n为0〜2的整数。）

公开(公告)号：US20160260882A1

公开(公告)日：2016-09-08

申请号：US15059937

申请日：2016-03-03

Applicant: FUJIFILM Corporation

Inventor： Ryo NISHIO ,  Kimiatsu NOMURA ,  Yoichi MARUYAMA

IPC: H01L35/24 ,  C08G75/06 ,  C08G73/06 ,  H01L35/26

CPC classification number: H01L35/24 ,  C08G61/123 ,  C08G61/124 ,  C08G61/126 ,  C08G73/0611 ,  C08G75/06 ,  C08G2261/1424 ,  C08G2261/3142 ,  C08G2261/3162 ,  C08G2261/3221 ,  C08G2261/3223 ,  C08G2261/3422 ,  C08G2261/344 ,  C08G2261/55 ,  C08G2261/794 ,  C08G2261/94 ,  H01L35/20 ,  H01L35/26

Abstract: Provided are the following: a thermoelectric conversion element including, on a substrate, a first electrode, a thermoelectric conversion layer and a second electrode, in which the thermoelectric conversion layer contains an electroconductive nanomaterial having an average length in the major axis direction of at least 5 nm and a polymer compound having a repeating unit represented by the following Formula (1); an article for thermoelectric power generation and a power source for sensors, which use this thermoelectric conversion element; and a thermoelectric conversion material for forming the thermoelectric conversion layer, the thermoelectric conversion material containing the electroconductive nanomaterial described above and a polymer compound having a repeating unit represented by the following Formula (1). In Formula (1), ring A represents a conjugated hydrocarbon ring or a conjugated heterocyclic ring; X represents a group having one or two or more atoms selected from the group consisting of a carbon atom, an oxygen atom, a sulfur atom, a nitrogen atom, a phosphorus atom, and a silicon atom, shared as ring-constituting atoms of the ring A; the average inter-unit distance of the ring A is 1.42 Å or less; R11 and R12 each independently represent a substituent, and may be bonded to each other to form a ring; and the symbol * represents a bonding position for the repeating unit.

Abstract translation: 提供如下：热电转换元件，其在基板上包括第一电极，热电转换层和第二电极，其中热电转换层包含长径方向的平均长度至少为原子的导电纳米材料 5nm的高分子化合物和具有下述式（1）表示的重复单元的高分子化合物。 用于热电发电的物品和用于传感器的电源，其使用该热电转换元件; 以及用于形成热电转换层的热电转换材料，含有上述导电纳米材料的热电转换材料和具有由下式（1）表示的重复单元的高分子化合物。 在式（1）中，环A表示共轭烃环或共轭杂环; X表示具有选自由碳原子，氧原子，硫原子，氮原子，磷原子和硅原子组成的组中的一个或两个以上的原子的基团，作为 环A; 环A的平均单位间距离为1.42以下; R 11和R 12各自独立地表示取代基，并且可以彼此键合形成环; 符号*表示重复单元的结合位置。

公开(公告)号：US20140158859A1

公开(公告)日：2014-06-12

申请号：US14181308

申请日：2014-02-14

Applicant: FUJIFILM CORPORATION

Inventor： Eiji FUKUZAKI ,  Kimiatsu NOMURA

IPC: H01L51/00 ,  H01L51/44

CPC classification number: H01L51/0056 ,  B82Y10/00 ,  C09B3/14 ,  C09B3/78 ,  C09B57/00 ,  C09B57/001 ,  H01L51/0046 ,  H01L51/4273 ,  H01L51/44

Abstract: A photoelectric conversion element includes a transparent conductive film, a conductive film, and a photoelectric conversion layer and an electron-blocking layer disposed between the transparent conductive film and the conductive film. The photoelectric conversion layer includes a condensed polycyclic hydrocarbon which contains at least 5 benzene rings, of which a total number of rings is 7 or more and which contains no carbonyl group. The electron-blocking layer includes a compound A having a residue after removal of at least one group of Ra1 to Ra9 from a compound represented by general formula (A) and having a glass transition point (Tg) of 200° C. or more. The photoelectric conversion element exhibits high photoelectric conversion efficiency and low dark current characteristics even after heating treatment, and can be manufactured with high productivity.

Abstract translation: 光电转换元件包括透明导电膜，导电膜和光电转换层以及设置在透明导电膜和导电膜之间的电子阻挡层。 光电转换层包括含有至少5个苯环的稠合多环烃，其总数为7以上，不含羰基。 电子阻挡层包括从通式（A）表示的化合物除去至少一组Ra1至Ra9并具有玻璃化转变点（Tg）为200℃以上的残留物的化合物A。 光电转换元件即使在加热处理之后也表现出高的光电转换效率和低的暗电流特性，并且可以以高生产率制造。