公开(公告)号：US06680829B2

公开(公告)日：2004-01-20

申请号：US09934096

申请日：2001-08-20

申请人： Lujun Chen ,  James Giusti ,  Juan Jose Fernandez-de-Castro ,  Jian Chen ,  Sining Mao

发明人： Lujun Chen ,  James Giusti ,  Juan Jose Fernandez-de-Castro ,  Jian Chen ,  Sining Mao

IPC分类号： G11B5127

CPC分类号： G11B5/3938 ,  G11B5/00 ,  G11B5/3903 ,  G11B5/398

摘要： A magnetoresistive (MR) sensor for use in a magnetic storage system including a magnetic storage media having multiple concentric microtracks with information stored thereon. The MR sensor includes a plurality of generally parallel layers that form an MR stack. The MR sensor also includes a top shield and a bottom shield that are spaced apart on opposite sides of the MR stack in a longitudinal direction. The Mr sensor further includes a first and a second side shield spaced apart on opposite sides of the MR stack in a transverse direction. The top shield, bottom shield, first side shield and second side shield substantially surround the MR stack.

摘要翻译： 一种用于磁存储系统的磁阻（MR）传感器，包括具有存储在其上的信息的具有多个同心微轨迹的磁存储介质。 MR传感器包括形成MR堆叠的多个大致平行的层。 MR传感器还包括在MR堆叠的纵向方向上的相对侧上间隔开的顶部屏蔽和底部屏蔽。 Mr传感器还包括在横向上在MR堆叠的相对侧上间隔开的第一和第二侧屏蔽。 顶部屏蔽，底部屏蔽，第一侧面屏蔽和第二侧面屏蔽件基本上围绕MR堆叠。

公开(公告)号：US06548114B2

公开(公告)日：2003-04-15

申请号：US09907219

申请日：2001-07-17

申请人： Sining Mao ,  Anthony M. Mack ,  Brenda A. Everitt ,  Edward S. Murdock ,  Zheng Gao

发明人： Sining Mao ,  Anthony M. Mack ,  Brenda A. Everitt ,  Edward S. Murdock ,  Zheng Gao

IPC分类号： C23C1606

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10S977/934 ,  Y10T29/49046

摘要： A method of fabricating a spin valve sensor includes sequentially depositing, without breaking vacuum, a seed layer and an antiferromagnetic layer. Sequentially depositing the seed layer and the antiferromagnetic layer includes depositing a seed layer on a substrate; depositing a Mn-alloy layer of the antiferromagnetic layer directly on top of the seed layer; and depositing a buffer layer of the antiferromagnetic layer directly on top of the Mn-alloy layer. The seed layer, the Mn-alloy layer and the buffer layer are annealed. After annealing, a portion of the buffer layer is etched and a synthetic antiferromagnetic layer is deposited on top of the buffer layer. A spacer layer is deposited on top of the synthetic antiferromagnetic layer, and a free layer is deposited on top of the spacer layer.

摘要翻译： 制造自旋阀传感器的方法包括在不破坏真空的情况下依次沉积种子层和反铁磁性层。 顺序地沉积种子层和反铁磁性层包括将种子层沉积在基底上; 将反铁磁层的Mn合金层直接沉积在种子层的顶部; 并将反铁磁层的缓冲层直接沉积在Mn合金层的顶部上。 种子层，Mn合金层和缓冲层退火。 在退火之后，缓冲层的一部分被蚀刻，并且合成的反铁磁层沉积在缓冲层的顶部上。 间隔层沉积在合成反铁磁性层的顶部上，并且自由层沉积在间隔层的顶部上。

公开(公告)号：US06396668B1

公开(公告)日：2002-05-28

申请号：US09621849

申请日：2000-07-24

申请人： Sining Mao ,  Dian Song

发明人： Sining Mao ,  Dian Song

IPC分类号： G11B539

CPC分类号： B82Y10/00 ,  G11B5/3903 ,  G11B5/3929 ,  G11B5/3954 ,  G11B2005/3996

摘要： A planar spin valve read head comprises a top and a bottom shield, and a first and a second gap layer. The first gap layer is positioned adjacent to the bottom shield. The second gap layer is positioned adjacent to the top shield. The read head includes a planar sensor structure positioned between the first and the second gap layers for sensing a magnetic field from a magnetic medium.

摘要翻译： 平面自旋阀读头包括顶部和底部屏蔽以及第一和第二间隙层。 第一间隙层定位成与底部屏蔽相邻。 第二间隙层位于顶盖附近。 读头包括位于第一和第二间隙层之间的平面传感器结构，用于感测来自磁介质的磁场。

公开(公告)号：US06169647A

公开(公告)日：2001-01-02

申请号：US09154437

申请日：1998-09-16

申请人： Sining Mao ,  Shouxiang Hu

发明人： Sining Mao ,  Shouxiang Hu

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B2005/3996

摘要： The data storage system includes a storage medium having a data surface with data stored thereon, the stored data comprises variations in magnetic fields across the data surface. A slider is adapted to move across the data surface, the slider includes an air bearing surface (ABS) which is substantially parallel to the data surface. A current source provides a sense current (I) and readback circuitry is adapted to receive a readback signal and responsively provide a data output. A magnetoresistive sensor carried on the slider is adapted to receive the sense current (I), readback data from the data surface in response to variations in the magnetic field across the disc surface, and responsively provide the readback signal to the readback circuitry. The sensor is adapted to exhibit a GMR effect in response to a magnetic field. The sensor includes a free layer and a pinned layer each having respective quiescent magnetic field vectors. The magnetic field vectors of the free layer and the pinned layer both rotate in response to an applied magnetic field.

摘要翻译： 数据存储系统包括具有其上存储有数据的数据表面的存储介质，所存储的数据包括跨数据表面的磁场的变化。 滑块适于在数据表面上移动，滑块包括基本上平行于数据表面的空气支承表面（ABS）。 电流源提供感测电流（I），回读电路适于接收回读信号并且响应地提供数据输出。 滑块上承载的磁阻传感器适于接收感测电流（I），响应于盘表面上的磁场的变化从数据表面读回数据，并且响应地将回读信号提供给回读电路。 该传感器适于表现出响应于磁场的GMR效应。 传感器包括各自具有相应的静态磁场矢量的自由层和固定层。 自由层和钉扎层的磁场矢量响应于所施加的磁场而旋转。

公开(公告)号：US07876531B2

公开(公告)日：2011-01-25

申请号：US11651245

申请日：2007-01-09

申请人： Steven Paul Bozeman ,  Olle Gunnar Heinonen ,  Sining Mao

发明人： Steven Paul Bozeman ,  Olle Gunnar Heinonen ,  Sining Mao

IPC分类号： G11B5/187

CPC分类号： G11B5/1278 ,  G11B2005/0008

摘要： A magnetic writer includes a first write element and a second write element. The first write element produces a first field when a first current is passed through a first coil. The second write element, which is disposed relative to the first write element, produces a second field when a second current is passed through a second coil such that the second field at least partially opposes the first field.

摘要翻译： 磁性写入器包括第一写入元件和第二写入元件。 当第一电流通过第一线圈时，第一写元件产生第一场。 当第二电流通过第二线圈使得第二场至少部分地与第一场相对时，相对于第一写元件布置的第二写入元件产生第二场。

公开(公告)号：US20080316631A1

公开(公告)日：2008-12-25

申请号：US11820703

申请日：2007-06-20

申请人： Kaizhong Gao ,  Sining Mao ,  Eric S. Linville ,  Xuebing Feng ,  Shaoping Li ,  Steven Paul Bozeman

发明人： Kaizhong Gao ,  Sining Mao ,  Eric S. Linville ,  Xuebing Feng ,  Shaoping Li ,  Steven Paul Bozeman

IPC分类号： G11B5/02

CPC分类号： G11B5/1278 ,  G11B5/02 ,  G11B5/3123 ,  G11B5/3133 ,  G11B2005/0002

摘要： A magnetic device includes a write element having a write element tip and a conductive coil that carries current to induce a first field in the write element. A first conductor is proximate a leading edge of the write pole tip for carrying current to generate a second field that augments the first field.

摘要翻译： 磁性装置包括具有写入元件尖端的写元件和承载电流以在写入元件中引起第一场的导电线圈。 第一导体靠近写极尖的前缘，用于承载电流以产生增大第一场的第二场。

公开(公告)号：US06795280B1

公开(公告)日：2004-09-21

申请号：US09441901

申请日：1999-11-17

申请人： Dian Song ,  Nurul Amin ,  Sining Mao

发明人： Dian Song ,  Nurul Amin ,  Sining Mao

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B2005/3996

摘要： A method and apparatus for a recording head using a spin-dependent tunneling (SDT) junction. The SDT junction utilizes an aluminum oxide tunnel barrier. The tunnel barrier can be formed to a thickness comparable with a typical Cu spacer layer on a spin valve. With the SDT junction, current is applied perpendicular to the plane of the film. The SDT junctions can have high magneto-resistance up to 40%. The magnetoresistive qualities of a head design incorporating the SDT junction are not directly related to head resistance, head geometry, bias current and film thickness. The method can include forming a spin tunnel barrier by fashioning a stack into a bottom electrode, defining a junction, depositing a layer of insulator, performing a photoprocess, depositing an upper electrode layer and lifting off the top electrode layer to define the electrode. The stack can include a pinned layer, a barrier layer and a free layer. The pinned layer can include NiFe. The barrier layer can include AlOx. The free layer can include Co. The junction can be defined with an ion mill and the insulator can include Al2O3. In addition, the top electrode layer can include Cu.

摘要翻译： 一种使用自旋相关隧道（SDT）结的记录头的方法和装置。 SDT连接处使用氧化铝隧道屏障。 隧道势垒可以形成为与自旋阀上的典型Cu间隔层相当的厚度。 使用SDT结，电流垂直于膜的平面施加。 SDT结可以具有高达40％的高磁阻。 结合SDT结的头部设计的磁阻性质与磁头电阻，磁头几何形状，偏置电流和膜厚度无直接关系。 该方法可以包括通过将堆叠形成底部电极形成自旋隧道势垒，限定结，沉积绝缘体层，执行光电处理，沉积上部电极层和提起顶部电极层以限定电极。 堆叠可以包括钉扎层，阻挡层和自由层。 钉扎层可以包括NiFe。 阻挡层可以包括AlOx。 自由层可以包括公司。接合点可以用离子磨机定义，绝缘体可以包括Al2O3。 此外，顶部电极层可以包括Cu。

公开(公告)号：US06724584B2

公开(公告)日：2004-04-20

申请号：US10152192

申请日：2002-05-20

申请人： Anthony M. Mack ,  Zheng Gao ,  Nurul Amin ,  Sining Mao ,  Richard Michel

发明人： Anthony M. Mack ,  Zheng Gao ,  Nurul Amin ,  Sining Mao ,  Richard Michel

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3113 ,  G11B5/3163 ,  G11B5/3903 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/304 ,  Y10T29/49034

摘要： Methods of fabricating spin valve sensors in accordance with the invention include forming a pinning layer from an antiferromagnetic material and forming a synthetic antiferromagnet adjacent the pinning layer. A free ferromagnetic layer is formed, and exchange tabs are formed adjacent outer portions of the free ferromagnetic layer for biasing the free layer. The exchange tabs are formed from the same antiferromagnetic material as the first pinning layer. Then, the magnetic moments of the synthetic antiferromagnet are set, and the magnetic moment of the free ferromagnetic layer is biased, during a single anneal in the presence of a single magnetic field.

摘要翻译： 制造根据本发明的自旋阀传感器的方法包括从反铁磁材料形成钉扎层并在钉扎层附近形成合成的反铁磁体。 形成自由铁磁层，并且在自由铁磁层的外部附近形成交换突片以偏置自由层。 交换翼片由与第一钉扎层相同的反铁磁材料形成。 然后，在存在单个磁场的单次退火期间，设定合成反铁磁体的磁矩，并且自由铁磁层的磁矩被偏置。

公开(公告)号：US06713800B2

公开(公告)日：2004-03-30

申请号：US10185260

申请日：2002-06-27

申请人： Erli Chen ,  Sining Mao ,  Zheng Gao ,  Paul Kolbo ,  Douglas Saunders

发明人： Erli Chen ,  Sining Mao ,  Zheng Gao ,  Paul Kolbo ,  Douglas Saunders

IPC分类号： H01L31119

CPC分类号： G11B5/3903 ,  G11B5/112 ,  G11B5/3146

摘要： A read sensor for use in a magnetic read head includes a magnetoresistive stack having a plurality of layers, and first and second shield regions positioned adjacent to the magnetoresistive stack. Each of the shield regions includes a first soft magnetic layer for shunting flux from an adjacent track to the shield region instead of the magnetoresistive stack.

摘要翻译： 用于磁读头的读传感器包括具有多个层的磁阻堆叠，以及邻近磁阻堆叠放置的第一和第二屏蔽区域。 每个屏蔽区域包括第一软磁层，用于分流来自屏蔽区域的相邻轨道的通量，而不是磁阻堆叠。

公开(公告)号：US06704176B2

公开(公告)日：2004-03-09

申请号：US10010080

申请日：2001-11-13

申请人： Alexander M. Shukh ,  Dimitar V. Dimitrov ,  Sining Mao ,  Ananth Naman ,  Philip A. Seekell ,  Erli Chen ,  Lujun Chen

发明人： Alexander M. Shukh ,  Dimitar V. Dimitrov ,  Sining Mao ,  Ananth Naman ,  Philip A. Seekell ,  Erli Chen ,  Lujun Chen

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

摘要： A spin valve sensor for use with a data storage system includes free and pinned ferromagnetic (FM) layers, a conducting layer therebetween, contact leads, free layer biasing elements, and an anti-ferromagnetic (AFM) layer. The pinned layer has opposing ends, which define a width of an active region of the spin valve sensor having a giant magnetoresistive effect in response to applied magnetic fields. The free layer is positioned below the pinned layer and has opposing ends that extend beyond the active region. The contact leads abut the pinned layer and overlay portions of the conducting layer. The free layer biasing elements abut the ends of the free layer and bias a magnetization of the free layer in a longitudinal direction.

摘要翻译： 用于数据存储系统的自旋阀传感器包括自由和固定铁磁（FM）层，其间的导电层，接触引线，自由层偏置元件和反铁磁（AFM）层。 钉扎层具有相对的端部，其限定自旋阀传感器的有效区域的宽度，其响应于施加的磁场具有巨大的磁阻效应。 自由层定位在被钉扎层的下方并且具有延伸超出有效区域的相对端。 接触引线邻接被钉扎层并覆盖导电层的部分。 自由层偏置元件抵靠自由层的端部并且沿纵向方向偏置自由层的磁化。