公开(公告)号：US20190243066A1

公开(公告)日：2019-08-08

申请号：US16386171

申请日：2019-04-16

Applicant: FINISAR CORPORATION

Inventor： Daniel Mahgerefteh ,  Bryan Park ,  Jianxiao Chen ,  Xiaojie Xu ,  Gilles P. Denoyer ,  Bernd Huebner

IPC: G02B6/122 ,  G02B6/27 ,  G02B6/125 ,  G02B6/126 ,  G02B6/136 ,  G02B6/124

CPC classification number: G02B6/1228 ,  G02B6/1221 ,  G02B6/1223 ,  G02B6/124 ,  G02B6/125 ,  G02B6/126 ,  G02B6/136 ,  G02B6/2726 ,  G02B6/2773 ,  G02B6/305 ,  G02B6/4208 ,  G02B6/4215 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12069 ,  G02B2006/12097 ,  G02B2006/12121 ,  G02B2006/12123 ,  G02B2006/12147 ,  G02B2006/12157 ,  G02B2006/12164

Abstract: In an example, a photonic system includes a Si PIC with a Si substrate, a SiO2 box formed on the Si substrate, a first layer, and a second layer. The first layer is formed above the SiO2 box and includes a SiN waveguide with a coupler portion at a first end and a tapered end opposite the first end. The second layer is formed above the SiO2 box and vertically displaced above or below the first layer. The second layer includes a Si waveguide with a tapered end aligned in two orthogonal directions with the coupler portion of the SiN waveguide such that the tapered end of the Si waveguide overlaps in the two orthogonal directions and is parallel to the coupler portion of the SiN waveguide. The tapered end of the SiN waveguide is configured to be adiabatically coupled to a coupler portion of an interposer waveguide.

公开(公告)号：US20190025506A1

公开(公告)日：2019-01-24

申请号：US16037905

申请日：2018-07-17

Applicant: Finisar Corporation

Inventor： Bryan Park

IPC: G02B6/126 ,  G02B6/122 ,  G02B6/125

Abstract: In an example, a photonic system includes a Si PIC-based polarization splitter rotator (PSR) that includes first and second SiN waveguides formed in a first layer of a Si PIC, each of the first and second SiN waveguides having a coupler portion. The PSR also includes a Si waveguide formed in a second layer of the Si PIC above or below the first layer. The Si waveguide includes a first tapered end near the coupler portion of the first SiN waveguide and adiabatically coupled to the coupler portion of the first SiN waveguide, a second tapered end near the coupler portion of the second SiN waveguide and adiabatically coupled to the coupler portion of the second SiN waveguide, and a first s-bend between the first and second tapered ends that cooperates with the first SiN waveguide to form a polarization rotator for light propagating in the first SiN waveguide.

公开(公告)号：US10001599B2

公开(公告)日：2018-06-19

申请号：US14938807

申请日：2015-11-11

Applicant: FINISAR CORPORATION

Inventor： Bryan Park ,  Daniel Mahgerefteh

IPC: G02B6/00 ,  G02B6/122 ,  G02B6/136 ,  G02B6/124 ,  G02B6/126 ,  G02B6/27 ,  G02B6/125 ,  G02B6/30 ,  G02B6/12 ,  G02B6/42

CPC classification number: G02B6/1228 ,  G02B6/1221 ,  G02B6/1223 ,  G02B6/124 ,  G02B6/125 ,  G02B6/126 ,  G02B6/136 ,  G02B6/2726 ,  G02B6/2773 ,  G02B6/305 ,  G02B6/4208 ,  G02B6/4215 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12069 ,  G02B2006/12097 ,  G02B2006/12121 ,  G02B2006/12123 ,  G02B2006/12147 ,  G02B2006/12157 ,  G02B2006/12164

Abstract: In an example, a photonic system includes a Si PIC with a Si substrate, a SiO2 box formed on the Si substrate, a first layer, and a second layer. The first layer is formed above the SiO2 box and includes a SiN waveguide with a coupler portion at a first end and a tapered end opposite the first end. The second layer is formed above the SiO2 box and vertically displaced above or below the first layer. The second layer includes a Si waveguide with a tapered end aligned in two orthogonal directions with the coupler portion of the SiN waveguide such that the tapered end of the Si waveguide overlaps in the two orthogonal directions and is parallel to the coupler portion of the SiN waveguide. The tapered end of the SiN waveguide is configured to be adiabatically coupled to a coupler portion of an interposer waveguide.

公开(公告)号：US20170363808A1

公开(公告)日：2017-12-21

申请号：US15692793

申请日：2017-08-31

Applicant: FINISAR CORPORATION

Inventor： Daniel Mahgerefteh ,  Bryan Park ,  Jianxiao Chen ,  Xiaojie Xu ,  Gilles P. Denoyer ,  Bernd Huebner

IPC: G02B6/122 ,  G02B6/125 ,  G02B6/126 ,  G02B6/27 ,  G02B6/124 ,  G02B6/136 ,  G02B6/30 ,  G02B6/12 ,  G02B6/42

CPC classification number: G02B6/1228 ,  G02B6/1221 ,  G02B6/1223 ,  G02B6/124 ,  G02B6/125 ,  G02B6/126 ,  G02B6/136 ,  G02B6/2726 ,  G02B6/2773 ,  G02B6/305 ,  G02B6/4208 ,  G02B6/4215 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12069 ,  G02B2006/12097 ,  G02B2006/12121 ,  G02B2006/12123 ,  G02B2006/12147 ,  G02B2006/12157 ,  G02B2006/12164

Abstract: In an example, a photonic system includes a Si PIC with a Si substrate, a SiO2 box formed on the Si substrate, a first layer, and a second layer. The first layer is formed above the SiO2 box and includes a SiN waveguide with a coupler portion at a first end and a tapered end opposite the first end. The second layer is formed above the SiO2 box and vertically displaced above or below the first layer. The second layer includes a Si waveguide with a tapered end aligned in two orthogonal directions with the coupler portion of the SiN waveguide such that the tapered end of the Si waveguide overlaps in the two orthogonal directions and is parallel to the coupler portion of the SiN waveguide. The tapered end of the SiN waveguide is configured to be adiabatically coupled to a coupler portion of an interposer waveguide.

公开(公告)号：US20170329081A1

公开(公告)日：2017-11-16

申请号：US15596958

申请日：2017-05-16

Applicant: Finisar Corporation

Inventor： Daniel Mahgerefteh ,  Bryan Park

IPC: G02B6/125 ,  G02B6/122 ,  G02B6/12

CPC classification number: G02B6/125 ,  G02B6/1228 ,  G02B6/305 ,  G02B2006/12061 ,  G02B2006/1209

Abstract: An optical system includes a silicon (Si) substrate, a buried oxide (BOX) layer formed on the substrate, a silicon nitride (SiN) layer formed above the BOX layer, and a SiN waveguide formed in the SiN layer. In some embodiments, the optical system may additionally include an interposer waveguide adiabatically coupled to the SiN waveguide to form a SiN-interposer adiabatic coupler that includes at least the tapered section of the SiN waveguide, the optical system further including at least one of: a cavity formed in the Si substrate at least beneath the SiN-interposer adiabatic coupler or an oxide overlay formed between a top of a SiN core of the SiN waveguide and a bottom of the interposer waveguide. Alternatively or additionally, the optical system may additionally include a multimode Si—SiN adiabatic coupler that includes a SiN taper of a SiN waveguide and a Si taper of a Si waveguide.

公开(公告)号：US20170052317A1

公开(公告)日：2017-02-23

申请号：US15208170

申请日：2016-07-12

Applicant: Finisar Corporation

Inventor： Daniel Mahgerefteh ,  Bryan Park ,  Jianxiao Chen ,  Xiaojie Xu ,  Gilles P. Denoyer ,  Bernd Huebner

IPC: G02B6/122 ,  G02B6/27 ,  G02B6/125 ,  G02B6/126 ,  G02B6/42 ,  G02B6/12 ,  G02B6/136 ,  G02B6/14 ,  G02B6/32

CPC classification number: G02B6/1228 ,  G02B6/1221 ,  G02B6/1223 ,  G02B6/124 ,  G02B6/125 ,  G02B6/126 ,  G02B6/136 ,  G02B6/2726 ,  G02B6/2773 ,  G02B6/305 ,  G02B6/4208 ,  G02B6/4215 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12069 ,  G02B2006/12097 ,  G02B2006/12121 ,  G02B2006/12123 ,  G02B2006/12147 ,  G02B2006/12157 ,  G02B2006/12164

Abstract: In an example, a coupled system includes a first waveguide, at least one second waveguide, and an interposer. The first waveguide has a silicon (Si) core having first refractive index n1 and a tapered end. The at least one second waveguide each has a silicon nitride (SiN) core having a second refractive index n2. The interposer includes a third waveguide having a third refractive index n3 and a coupler portion, where n1>n2>n3. The tapered end of the first waveguide is adiabatically coupled to a coupler portion of one of the at least one second waveguide. A tapered end of one of the at least one second waveguide is adiabatically coupled to the coupler portion of the third waveguide of the interposer. The third waveguide of the interposer has an optical mode size that is similar to the mode size of a standard single mode optical fiber.

Abstract translation: 在一个示例中，耦合系统包括第一波导，至少一个第二波导和插入器。 第一波导具有具有第一折射率n1和锥形端的硅（Si）芯。 所述至少一个第二波导各自具有具有第二折射率n2的氮化硅（SiN）芯。 插入器包括具有第三折射率n3和耦合器部分的第三波导，其中n1> n2> n3。 第一波导的锥形端绝热地耦合到至少一个第二波导中的一个的耦合器部分。 所述至少一个第二波导中的一个的锥形端绝热地耦合到所述插入器的所述第三波导的耦合器部分。 插入器的第三波导具有与标准单模光纤的模式尺寸相似的光学模式尺寸。

公开(公告)号：US09405066B2

公开(公告)日：2016-08-02

申请号：US14938815

申请日：2015-11-11

Applicant: FINISAR CORPORATION

Inventor： Daniel Mahgerefteh ,  Bryan Park ,  Jianxiao Chen ,  Xiaojie Xu ,  Gilles P. Denoyer ,  Bernd Huebner

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/14 ,  G02B6/32 ,  G02B6/293 ,  G02B6/136 ,  G02B6/30 ,  G02B6/42

CPC classification number: G02B6/1228 ,  G02B6/1221 ,  G02B6/1223 ,  G02B6/124 ,  G02B6/125 ,  G02B6/126 ,  G02B6/136 ,  G02B6/2726 ,  G02B6/2773 ,  G02B6/305 ,  G02B6/4208 ,  G02B6/4215 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12069 ,  G02B2006/12097 ,  G02B2006/12121 ,  G02B2006/12123 ,  G02B2006/12147 ,  G02B2006/12157 ,  G02B2006/12164

Abstract: In an example, a coupled system includes a first waveguide, at least one second waveguide, and an interposer. The first waveguide has a first refractive index n1 and a tapered end. The at least one second waveguide each has a second refractive index n2. The interposer includes a third waveguide having a third refractive index n3 and a coupler portion, where n1>n2>n3. The tapered end of the first waveguide is adiabatically coupled to a coupler portion of one of the at least one second waveguide. A tapered end of one of the at least one second waveguide is adiabatically coupled to the coupler portion of the third waveguide of the interposer. The coupled system is configured to adiabatically couple light between the first waveguide and the at least one second waveguide and between the at least one second waveguide and the third waveguide.

Abstract translation: 在一个示例中，耦合系统包括第一波导，至少一个第二波导和插入器。 第一波导具有第一折射率n1和锥形端。 所述至少一个第二波导各自具有第二折射率n2。 插入器包括具有第三折射率n3和耦合器部分的第三波导，其中n1> n2> n3。 第一波导的锥形端绝热地耦合到至少一个第二波导中的一个的耦合器部分。 所述至少一个第二波导中的一个的锥形端绝热地耦合到所述插入器的所述第三波导的耦合器部分。 耦合系统被配置为在第一波导和至少一个第二波导之间以及在至少一个第二波导和第三波导之间绝热耦合光。

公开(公告)号：US20160131842A1

公开(公告)日：2016-05-12

申请号：US14938807

申请日：2015-11-11

Applicant: FINISAR CORPORATION

Inventor： Daniel Mahgerefteh ,  Bryan Park ,  Jianxiao Chen ,  Xiaojie Xu ,  Gilles P. Denoyer ,  Bernd Huebner

IPC: G02B6/27 ,  G02B6/136 ,  G02B6/293 ,  G02B6/124 ,  G02B6/126 ,  G02B6/122

CPC classification number: G02B6/1228 ,  G02B6/1221 ,  G02B6/1223 ,  G02B6/124 ,  G02B6/125 ,  G02B6/126 ,  G02B6/136 ,  G02B6/2726 ,  G02B6/2773 ,  G02B6/305 ,  G02B6/4208 ,  G02B6/4215 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12069 ,  G02B2006/12097 ,  G02B2006/12121 ,  G02B2006/12123 ,  G02B2006/12147 ,  G02B2006/12157 ,  G02B2006/12164

Abstract: In an example, a photonic system includes a Si PIC with a Si substrate, a SiO2 box formed on the Si substrate, a first layer, and a second layer. The first layer is formed above the SiO2 box and includes a SiN waveguide with a coupler portion at a first end and a tapered end opposite the first end. The second layer is formed above the SiO2 box and vertically displaced above or below the first layer. The second layer includes a Si waveguide with a tapered end aligned in two orthogonal directions with the coupler portion of the SiN waveguide such that the tapered end of the Si waveguide overlaps in the two orthogonal directions and is parallel to the coupler portion of the SiN waveguide. The tapered end of the SiN waveguide is configured to be adiabatically coupled to a coupler portion of an interposer waveguide.

Abstract translation: 在一个示例中，光子系统包括具有Si衬底的Si PIC，在Si衬底上形成的SiO 2盒，第一层和第二层。 第一层形成在SiO 2盒上方，并且包括在第一端具有耦合器部分和与第一端相对的锥形端的SiN波导。 第二层形成在SiO 2盒上方，并在第一层上方或下方垂直位移。 第二层包括Si波导，其具有与SiN波导的耦合部分在两个正交方向上对齐的锥形端，使得Si波导的锥形端在两个正交方向上重叠并且平行于SiN波导的耦合部分 。 SiN波导的锥形端被配置为绝热地耦合到插入器波导的耦合器部分。