Non-flammable, non-aqueous group IVB metal alkoxide crosslinkers and fracturing fluid compositions incorporating same
    21.
    发明申请
    Non-flammable, non-aqueous group IVB metal alkoxide crosslinkers and fracturing fluid compositions incorporating same 失效
    非易燃,非水族IVB金属醇盐交联剂和包含其的压裂液组合物

    公开(公告)号:US20090288828A1

    公开(公告)日:2009-11-26

    申请号:US12154041

    申请日:2008-05-20

    IPC分类号: E21B43/22

    CPC分类号: C09K8/685

    摘要: A non-aqueous, non-flammable Group IVB metal alkoxide crosslinker composition includes a non-aqueous, non-flammable Group IVB metal alkoxide, wherein the metal is chemically bonded to a glycol containing 4 or more carbons, to an alkoxy group containing 6 or more carbons, or a mixture of both. A fracturing fluid employed in the hydraulic fracturing of subterranean formations is formulated through mixture of the non-aqueous, non-flammable Group IVB metal alkoxide crosslinker composition with a polymer solution.

    摘要翻译: 非水不挥发性IVB族金属醇盐交联剂组合物包括非水不挥发性IVB族金属醇盐,其中金属与含有4个或更多个碳的二元醇化学键合至含有6或 更多的碳,或两者的混合物。 通过将非水不挥发的第ⅣB族金属醇盐交联剂组合物与聚合物溶液的混合物来配制用于地下水层压裂的压裂液。

    Gelling agent for hydrocarbon liquid and method of use
    22.
    发明授权
    Gelling agent for hydrocarbon liquid and method of use 失效
    烃类液体胶凝剂及其使用方法

    公开(公告)号:US5990053A

    公开(公告)日:1999-11-23

    申请号:US885212

    申请日:1997-06-30

    IPC分类号: C09K8/64 E21B43/26 C08J3/09

    CPC分类号: C09K8/64

    摘要: A gelling agent for viscosifying liquid hydrocarbon fracturing fluids is an aluminum salt of a phosphate ester made by forming the ester by reacting P.sub.2 O.sub.5 with a mixture of organic alcohols which include high molecular weight alcohols or diols selected from hydroxy functional homopolymers, copolymer or terpolymer made from olefins and diolefins selected from the group consisting of ethylene, propylene, butene, butadiene, isoprene, and selected styrenes. The oil based fracturing fluid containing the gelling agent in sufficient concentration to provide a viscosity of between 50 cp and 350 cp at 100.degree. F.

    摘要翻译: 用于粘稠液体烃压裂液的胶凝剂是磷酸酯的铝盐,其通过使P2O5与包括高分子量醇或选自羟基官能均聚物,共聚物或三元共聚物的有机醇的混合物形成酯而形成, 烯烃和选自乙烯,丙烯,丁烯,丁二烯,异戊二烯和选择的苯乙烯的二烯烃。 含有胶凝剂的油基压裂液具有足够的浓度,以在100°F下提供50cp和350cp之间的粘度。

    Method of improving formation permeability using chlorine dioxide
    24.
    发明授权
    Method of improving formation permeability using chlorine dioxide 失效
    使用二氧化氯改善地层渗透性的方法

    公开(公告)号:US5031700A

    公开(公告)日:1991-07-16

    申请号:US538572

    申请日:1990-06-15

    IPC分类号: C09K8/72

    CPC分类号: C09K8/72 Y10S507/933

    摘要: Permeability of a subterranean formation is increased by injecting into the formation sufficient amount of chlorine dioxide solution to react with formation clays and silicates. The pH of the ClO.sub.2 solution is controlled between 0.01 and 3.2 using preferably a mineral acid and liquid CO.sub.2 blended with the aqueous ClO.sub.2 solution.

    摘要翻译: 通过向地层中注入足够量的二氧化氯溶液与地层粘土和硅酸盐反应来增加地层的渗透性。 将ClO 2溶液的pH控制在0.01至3.2之间,优选使用无机酸和液体CO 2与ClO 2水溶液混合。

    Three metal personalization of application specific monolithic microwave
integrated circuit

    公开(公告)号:US4959705A

    公开(公告)日:1990-09-25

    申请号:US258607

    申请日:1988-10-17

    IPC分类号: H01L27/06 H01L27/118

    CPC分类号: H01L27/118 H01L27/0605

    摘要: A (GaAs-resident) application specific monolithic microwave integrated circuit (ASMMIC) is fabricated through the use of footprints that include a portion of the metallization through which the circuit components within the wafer are to be interconnected. The metallization is a three layers structure, the first two layers of which include strategically arranged reactance circuit components (MIM) capacitors. A first of the three metal layers is formed on a first surface of the substrate which contains a plurality of semiconductor device regions and conductive material for ohmic contact to the regions, so that portions of the first metal layer are in ohmic contact with the conductive material. The first metal layer provides the bottom plate of the MIM capacitors. A dielectric layer, which serves as the dielectric insulator of the MIM capacitors, is formed on second portions of the first metal layer. A second, intermediate metal layer is selectively formed on the second portions of the first metal layer, to provide top plate segments of MIM capacitors. Personalization of the footprint is effected by an air bridge metal layer interconnecting the first and second metal layers and thereby semiconductor device regions of the semiconductor structure with capacitive reactance elements formed by the first and second metal layers.