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公开(公告)号：US08031536B2
公开(公告)日：2011-10-04
申请号：US12748497
申请日：2010-03-29
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
IPC分类号： G11C7/10
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.
摘要翻译： 采用其中以块为单位重写数据的闪存的半导体盘作为存储介质，该半导体盘包括存储有文件数据的数据存储器，代替数据存储器中的错误块的替换存储器， 存储有数据存储器的错误信息的错误存储器，以及从数据存储器，替代存储器和错误存储器读取数据并将数据写入数据存储器，替代存储器和错误存储器的数据的存储器控制器。 由于可以补救闪速存储器的写入错误，所以可以提高半导体盘的使用寿命。
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公开(公告)号：US07379379B2
公开(公告)日：2008-05-27
申请号：US11599308
申请日：2006-11-15
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
IPC分类号： G11C8/00
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.
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公开(公告)号：US07327624B2
公开(公告)日：2008-02-05
申请号：US11599325
申请日：2006-11-15
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
IPC分类号： G11C7/00
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.
摘要翻译： 采用其中以块为单位重写数据的闪存的半导体盘作为存储介质，该半导体盘包括存储有文件数据的数据存储器，代替数据存储器中的错误块的替换存储器， 存储有数据存储器的错误信息的错误存储器，以及从数据存储器，替代存储器和错误存储器读取数据并将数据写入数据存储器，替代存储器和错误存储器的数据的存储器控制器。 由于可以补救闪速存储器的写入错误，所以可以提高半导体盘的使用寿命。
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公开(公告)号：US20070058475A1
公开(公告)日：2007-03-15
申请号：US11599325
申请日：2006-11-15
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
IPC分类号： G11C8/00
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.
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公开(公告)号：US07123519B2
公开(公告)日：2006-10-17
申请号：US11085555
申请日：2005-03-22
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
IPC分类号： G11C11/34
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.
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公开(公告)号：US07082510B2
公开(公告)日：2006-07-25
申请号：US11085544
申请日：2005-03-22
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
IPC分类号： G06F12/02
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.
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公开(公告)号：US20050166088A1
公开(公告)日：2005-07-28
申请号：US11085561
申请日：2005-03-22
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.
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公开(公告)号：US20050162901A1
公开(公告)日：2005-07-28
申请号：US11085555
申请日：2005-03-22
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.
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公开(公告)号：US20050162899A1
公开(公告)日：2005-07-28
申请号：US11085507
申请日：2005-03-22
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.
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公开(公告)号：US6130837A
公开(公告)日：2000-10-10
申请号：US782344
申请日：1997-01-13
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0659 , G06F3/0679 , G11C16/102 , G06F2003/0694 , G06F2212/2022 , G06F3/0664
摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block units is employed as a storage medium, said a semiconductor disk comprises a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.
摘要翻译： 其中以块为单位重写数据的闪速存储器的半导体盘被用作存储介质，所述半导体盘包括存储文件数据的数据存储器，代替数据存储器中的错误块的替换存储器 ，存储有数据存储器的错误信息的错误存储器，以及从数据存储器，替代存储器和错误存储器读取数据并将数据写入数据存储器，替换存储器和错误存储器中的数据的存储器控制器。 由于可以补救闪速存储器的写入错误，所以可以提高半导体盘的使用寿命。
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