公开(公告)号：US4391032A

公开(公告)日：1983-07-05

申请号：US282706

申请日：1981-07-13

Applicant: Heinz Schulte

Inventor： Heinz Schulte

IPC: H01L27/10 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  H01L29/78 ,  H01L29/92 ,  H01L21/20 ,  B01J17/00

CPC classification number: H01L28/40 ,  H01L27/10805 ,  H01L27/1085

Abstract: Method for manufacturing dynamic RAM one-transistor storage cells in a semiconductor chip with each cell having one integrated field effect transistor and one integrated capacitor. A semiconductor substrate surface is covered in part by a thin oxide layer and in part by a thick oxide structure. The thin oxide layer is subjected to a first ion implantation. A doped polycrystalline semiconductor material is deposited over the entire surface. The polycrystalline layer is structured by means of a photoresist mask and the underlying layers at the open places etched away to expose substrate surface. The mask is removed. A second thin oxide layer is created by oxidation over the entire surface. A second ion implantation implants ions in the second oxide layer. A second doped layer of polycrystalline material is deposited over the second layer. The second polycrystalline layer is structured by a suitable phototechnique to produce a polycrystalline structure semiconductor layer.

Abstract translation: 用于制造半导体芯片中的动态RAM单晶体管存储单元的方法，每个单元具有一个集成场效应晶体管和一个集成电容器。 半导体衬底表面部分由薄的氧化物层部分地覆盖，并且部分由厚的氧化物结构覆盖。 对薄氧化层进行第一离子注入。 掺杂的多晶半导体材料沉积在整个表面上。 多晶层通过光致抗蚀剂掩模构成，并且在开放位置处的下层被腐蚀掉以暴露衬底表面。 去除面具。 通过在整个表面上的氧化产生第二薄氧化物层。 第二离子注入在第二氧化物层中注入离子。 多晶材料的第二掺杂层沉积在第二层上。 第二多晶层由合适的光电技术构成以产生多晶结构半导体层。