Fine-processing agent and fine-processing method
    21.
    发明授权
    Fine-processing agent and fine-processing method 有权
    精加工剂和精细加工方法

    公开(公告)号:US08974685B2

    公开(公告)日:2015-03-10

    申请号:US13320171

    申请日:2009-05-21

    CPC分类号: H01L21/31111 C09K13/08

    摘要: Provided is a fine-processing agent which, when fine-processing a laminated film stacked at least with a silicon dioxide film and a silicon nitride film, can selectively fine-process the silicon dioxide film. Also provided is a fine-processing method utilizing the fine-processing agent. The fine-processing agent is characterized by including: (a) 0.01-15.0 weight % hydrogen fluoride and/or 0.1-40.0 weight % ammonium fluoride, (b) water, and (c) 0.001-10.00 weight % water-soluble polymer selected from among a group consisting of acrylic acid, ammonium acrylate, acrylic acid ester, acrylamide, styrenesulfonic acid, ammonium styrenesulfonate, and styrenesulfonic acid ester.

    摘要翻译: 本发明提供一种精细加工剂,其能够对至少层叠有二氧化硅膜和氮化硅膜的叠层膜进行精细加工,能够选择性地精细加工二氧化硅膜。 还提供了利用精细加工剂的精细加工方法。 该精细加工剂的特征在于:(a)0.01-15.0重量%氟化氢和/或0.1-40.0重量%氟化铵,(b)水和(c)0.001-10.00重量%水溶性聚合物 由丙烯酸,丙烯酸铵,丙烯酸酯,丙烯酰胺,苯乙烯磺酸,苯乙烯磺酸铵和苯乙烯磺酸酯组成的组中。

    POWER-SUPPLY DEVICE
    22.
    发明申请
    POWER-SUPPLY DEVICE 有权
    电源设备

    公开(公告)号:US20130200699A1

    公开(公告)日:2013-08-08

    申请号:US13763230

    申请日:2013-02-08

    IPC分类号: H02J1/04 B60R16/03

    摘要: The present invention provides a power-supply device, which can continuously supply a voltage from a power supply to a load even if a breakdown of a circuit is generated. The power-supply device includes a booster circuit, a normally-closed bypass relay, a CPU, and a switching circuit. A first switch of the switching circuit is turned on by a switching signal from the CPU, and a second switch is turned on by a boosting request signal from a boosting request signal generator. In the case that one of or both the switching signal and the boosting request signal are not input to the switching circuit 14, because a coil of a bypass relay is not energized, a contact turns on, and a voltage is supplied from a DC power supply to the load through the contact. When both the switching signal and the boosting request signal are input to the switching circuit, the coil is energized to turn off the contact, and a voltage supply path to the load is switched from the side of the bypass relay to the side of the booster circuit.

    摘要翻译: 本发明提供一种供电装置,其即使产生电路故障,也能够从电源向负载连续地供给电压。 电源装置包括升压电路,常闭旁路继电器,CPU和开关电路。 开关电路的第一开关由来自CPU的开关信号导通,并且第二开关由来自升压请求信号发生器的升压请求信号导通。 在切换信号和升压请求信号中的一方或两者不输入到切换电路14的情况下,由于旁路继电器的线圈未被通电,所以触点导通,并且从直流电力供给电压 通过触点提供给负载。 当切换信号和升压请求信号都被输入到开关电路时,线圈被通电以关断触点,并且到负载的电压供应路径从旁路继电器侧切换到升压器侧 电路。

    Method for manufacturing semiconductor device and method for cleaning semiconductor substrate
    23.
    发明授权
    Method for manufacturing semiconductor device and method for cleaning semiconductor substrate 有权
    半导体装置的制造方法及半导体基板的清洗方法

    公开(公告)号:US07994063B2

    公开(公告)日:2011-08-09

    申请号:US12988007

    申请日:2009-04-10

    IPC分类号: H01L21/30

    摘要: Disclosed is a method for cleaning a semiconductor substrate that can solve a problem of a conventional cleaning method which should include at least five steps for cleaning a substrate such as a semiconductor substrate. The method for cleaning a semiconductor substrate comprises a first step of cleaning a substrate with ultrapure water containing ozone, a second step of cleaning the substrate with ultrapure water containing a surfactant, and a third step of removing an organic compound derived from the surfactant, with a cleaning liquid containing ultrapure water and 2-propanol. After the third step, plasma of noble gas such as krypton is applied to the substrate to further remove the organic compound derived from the surfactant.

    摘要翻译: 公开了一种能够解决现有的清洗方法的问题的半导体基板的清洗方法,该清洗方法应至少包括五个步骤,用于清洗半导体基板等基板。 用于清洗半导体衬底的方法包括用含有臭氧的超纯水清洗衬底的第一步骤,用含有表面活性剂的超纯水清洗衬底的第二步骤以及从表面活性剂中除去有机化合物的第三步骤, 含有超纯水和2-丙醇的清洗液。 在第三步之后,将诸如氪的惰性气体的等离子体施加到基底上以进一步除去源自表面活性剂的有机化合物。