Vapor deposition method and apparatus
    22.
    发明申请
    Vapor deposition method and apparatus 有权
    气相沉积方法和装置

    公开(公告)号:US20090017192A1

    公开(公告)日:2009-01-15

    申请号:US12216060

    申请日:2008-06-27

    申请人: Hiroyasu Matsuura

    发明人: Hiroyasu Matsuura

    IPC分类号: B05D5/12 C23C16/04

    摘要: Provided is a method for moving, in a vacuum chamber carrying therein a fixedly-provided evaporation source, a substrate toward the evaporation source together with a mask closely attached to the substrate surface, and onto the surface substrate, evaporating a material vaporized in the evaporation source through an aperture formed to the mask. In this method of the invention, means for moving the substrate toward the evaporation source is provided with cooling means not to come in contact with but to be in proximity to a surface of the mask on the evaporation source side, and a cooling plate formed with an aperture proximal to the evaporation source is disposed. With such a configuration, the steam of the material coming from the evaporation source is directed to the mask and the substrate through the aperture of the cooling plate. As such, the material film evaporated on the substrate surface shows a satisfactory distribution of film thickness, and any possible misalignment from desired positions of evaporation can be accordingly suppressed.

    摘要翻译: 提供了一种在真空室中携带固定设置的蒸发源的方法,将基板与紧贴在基板表面上的掩模一起朝向蒸发源移动,并且在表面基板上蒸发蒸发的材料 源通过形成到掩模的孔。 在本发明的这种方法中,用于将基板朝向蒸发源移动的装置设置有冷却装置,其不与蒸发源侧的掩模的表面接触而接近,并且形成有冷却板 设置靠近蒸发源的孔。 通过这样的结构,来自蒸发源的材料的蒸汽通过冷却板的孔被引向掩模和基板。 因此,在基板表面上蒸发的材料膜显示出令人满意的膜厚度分布,并且可以相应地抑制与期望的蒸发位置的任何可能的未对准。