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137 条记录 (耗时 0.035 秒)

    STORAGE ELEMENT AND MEMORY DEVICE
    21.
    发明申请
    STORAGE ELEMENT AND MEMORY DEVICE 有权
    存储元件和存储器件

    公开(公告)号：US20120061780A1

    公开(公告)日：2012-03-15

    申请号：US13224369

    申请日：2011-09-02

    申请人： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane

    发明人： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane

    IPC分类号： H01L43/02

    CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/10

    摘要： Disclosed herein is a storage element, including: a storage layer which has magnetization vertical to a film surface and in which a direction of the magnetization is changed in correspondence to information; a magnetization fixing layer which has magnetization vertical to a film surface becoming a reference of the information stored in the storage layer, which is composed of plural magnetic layers, and which has a multilayered ferri-pin structure into which the plural magnetic layers are laminated one upon another through a non-magnetic layer(s); and an insulating layer made of a non-magnetic material and provided between the storage layer and the magnetization fixing layer.

    摘要翻译： 本文公开了一种存储元件，包括：存储层，其具有与膜表面垂直的磁化，并且其中相对于信息改变磁化方向; 具有垂直于膜表面的磁化的磁化固定层成为由多个磁性层组成的存储在存储层中的信息的参考，并且具有层叠多个磁性层的多层铁笔结构 另一个通过非磁性层; 以及由非磁性材料制成并设置在所述存储层和所述磁化固定层之间的绝缘层。

    MEMORY ELEMENT AND MEMORY DEVICE
    22.
    发明申请
    MEMORY ELEMENT AND MEMORY DEVICE 有权
    存储元件和存储器件

    公开(公告)号：US20120056286A1

    公开(公告)日：2012-03-08

    申请号：US13216474

    申请日：2011-08-24

    申请人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

    发明人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC分类号： H01L29/82

    CPC分类号： G11C11/16 ,  G11C11/161

    摘要： There is disclosed a memory element including a layered structure including a memory layer that has magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and the memory layer and the magnetization-fixed layer have a film thickness in such a manner that an interface magnetic anisotropy energy becomes larger than a diamagnetic energy.

    摘要翻译： 公开了一种存储元件，其包括层叠结构，该分层结构包括具有垂直于膜面的磁化和其信息方向变化的磁化方向的存储层; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层之间的绝缘层。 自旋极化的电子沿分层结构的层叠方向注入，由此存储层的磁化方向变化，并且相对于存储层执行信息的记录，有效的抗磁场的大小 存储层接收小于存储层的饱和磁化量，并且存储层和磁化固定层具有使界面磁各向异性能量变得大于反磁能的方式的膜厚度。

    MEMORY ELEMENT AND MEMORY DEVICE
    23.
    发明申请
    MEMORY ELEMENT AND MEMORY DEVICE 有权
    存储元件和存储器件

    公开(公告)号：US20120056283A1

    公开(公告)日：2012-03-08

    申请号：US13215405

    申请日：2011-08-23

    申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

    发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

    IPC分类号： H01L29/82

    CPC分类号： H01L43/10 ,  G11C11/16 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08

    摘要： There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face and becomes a reference for the information stored in the memory layer; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer and is formed of a non-magnetic layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure having the memory layer, the insulating layer, and the magnetization-fixed layer, and thereby the magnetization direction varies and a recording of information is performed with respect to the memory layer, and a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer.

    摘要翻译： 公开了一种存储元件，其包括具有垂直于膜面的磁化和其磁化方向根据信息而变化的存储层; 磁化固定层，其具有垂直于膜面的磁化，并成为存储在存储层中的信息的参考; 以及绝缘层，其设置在所述存储层和所述磁化固定层之间并且由非磁性层形成，其中在具有所述存储层的层状结构的层叠方向上注入自旋极化的电子， 绝缘层和磁化固定层，从而磁化方向变化，并且相对于存储层执行信息记录，存储层接收的有效抗磁场的大小小于饱和磁化强度 内存层的数量。

    MAGNETIC STORAGE ELEMENT AND MAGNETIC MEMORY
    24.
    发明申请
    MAGNETIC STORAGE ELEMENT AND MAGNETIC MEMORY 有权
    磁存储元件和磁记忆

    公开(公告)号：US20120001281A1

    公开(公告)日：2012-01-05

    申请号：US13150995

    申请日：2011-06-01

    申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida

    发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida

    IPC分类号： H01L29/82

    CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： Disclosed herein is a magnetic storage element including: a reference layer configured to have a magnetization direction fixed to a predetermined direction; a recording layer configured to have a magnetization direction that changes due to spin injection in a direction corresponding to recording information; an intermediate layer configured to separate the recording layer from the reference layer; and a heat generator configured to heat the recording layer. A material of the recording layer is such a magnetic material that magnetization at 150° C. is at least 50% of magnetization at a room temperature and magnetization at a temperature in a range from 150° C. to 200° C. is in a range from 10% to 80% of magnetization at a room temperature.

    摘要翻译： 这里公开了一种磁存储元件，包括：参考层，其被配置为具有固定到预定方向的磁化方向; 记录层，被配置为具有在与记录信息相对应的方向上由于自旋注入而改变的磁化方向; 中间层，被配置为将记录层与参考层分离; 以及被配置为加热记录层的发热体。 记录层的材料是这样一种磁性材料，其在150℃下的磁化是在室温下的磁化强度至少为50％，并且在150℃至200℃范围内的温度下的磁化处于 在室温下磁化强度为10％至80％。

    MEMORY DEVICE
    25.
    发明申请
    MEMORY DEVICE 有权
    内存设备

    公开(公告)号：US20110305077A1

    公开(公告)日：2011-12-15

    申请号：US13098996

    申请日：2011-05-02

    申请人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

    发明人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC分类号： G11C11/14

    CPC分类号： G11C11/161

    摘要： Disclosed herein is a memory device, including: a memory element including a memory layer for holding therein information in accordance with a magnetization state of a magnetic material, a fixed magnetization layer which is provided on the memory layer through a non-magnetic layer and whose direction of a magnetization is fixed to a direction parallel with a film surface, and a magnetic layer which is provided on a side opposite to the fixed magnetization layer relative to the memory layer through a non-magnetic layer and whose direction of a magnetization is a direction vertical to the film surface; and a wiring through which a current is caused to flow through the memory element in a direction of lamination of the layers of the memory element.

    摘要翻译： 这里公开了一种存储器件，包括：存储元件，其包括存储层，用于根据磁性材料的磁化状态保存信息;固定磁化层，其通过非磁性层设置在存储层上， 磁化方向固定在与膜表面平行的方向上，磁性层通过非磁性层而相对于存储层设置在与固定磁化层相反的一侧，并且其磁化方向为 垂直于膜表面的方向; 以及使电流通过存储元件沿存储元件的层的层叠方向流过的布线。

    Perpendicular magnetization storage element and storage device
    27.
    发明授权
    Perpendicular magnetization storage element and storage device 有权
    垂直磁化存储元件和存储装置

    公开(公告)号：US08854876B2

    公开(公告)日：2014-10-07

    申请号：US13462538

    申请日：2012-05-02

    申请人： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Kazutaka Yamane

    发明人： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Kazutaka Yamane

    IPC分类号： G11C11/14 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16

    CPC分类号： H01L43/10 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/226 ,  H01L43/08

    摘要： A storage element includes a storage layer which has magnetization perpendicular to its film surface and which retains information by a magnetization state of a magnetic substance, a magnetization pinned layer having magnetization perpendicular to its film surface which is used as the basis of the information stored in the storage layer, an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer, and a cap layer which is provided adjacent to the storage layer at a side opposite to the interlayer and which includes at least two oxide layers. The storage element is configured to store information by reversing the magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer.

    摘要翻译： 存储元件包括具有垂直于其膜表面的磁化并且通过磁性物质的磁化状态保持信息的存储层，具有垂直于其膜表面的磁化的磁化固定层，其被用作存储在其中的信息的基础 所述存储层，设置在所述存储层和所述磁化被钉扎层之间的非磁性物质的中间层，以及在与所述中间层相对的一侧设置在所述存储层附近并且包括至少两个氧化物层的盖层 。 存储元件被配置为通过使用由包括存储层，中间层和磁化固定层的层结构的层叠方向通过的电流产生的自旋转矩磁化反转来反转存储层的磁化来存储信息。

    Memory element and memory
    28.
    发明授权
    Memory element and memory 有权
    内存元素和内存

    公开(公告)号：US08853806B2

    公开(公告)日：2014-10-07

    申请号：US13221261

    申请日：2011-08-30

    申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

    发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC分类号： H01L29/82

    CPC分类号： H01L43/10 ,  H01L43/08

    摘要： There is provided a memory element including a magnetic layer that includes at least one kind of element selected from a group consisting of Fe, Co, and Ni, and carbon, has a content of carbon that is equal to or greater than 3 atomic % and less than 70 atomic % with respect to a total content of Fe, Co, and Ni, and has magnetic anisotropy in a direction perpendicular to a film face; and an oxide layer that is formed of an oxide having a sodium chloride structure or a spinel structure and that comes into contact with the magnetic layer.

    摘要翻译： 提供了包括磁性层的记忆元件，该磁性层包括从由Fe，Co和Ni组成的组中选择的至少一种元素，碳具有等于或大于3原子％的碳含量，以及 相对于Fe，Co和Ni的总含量小于70原子％，并且在垂直于膜面的方向上具有磁各向异性; 以及由具有氯化钠结构或尖晶石结构并与磁性层接触的氧化物形成的氧化物层。

    Magnetic memory device and method of manufacturing the same
    30.
    发明授权
    Magnetic memory device and method of manufacturing the same 失效
    磁记忆体装置及其制造方法

    公开(公告)号：US08497139B2

    公开(公告)日：2013-07-30

    申请号：US13192995

    申请日：2011-07-28

    申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

    发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC分类号： H01L29/82 ,  G11C11/02

    CPC分类号： H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L29/66007 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

    摘要： A magnetic memory device including a memory layer having a vertical magnetization on the layer surface, of which the direction of magnetization is changed according to information; and a reference layer provided against the memory layer, and being a basis of information while having a vertical magnetization on the layer surface, wherein the memory device memorizes the information by reversing the magnetization of the memory layer by a spin torque generated when a current flows between layers made from the memory layer, the nonmagnetization layer and the reference layer, and a coercive force of the memory layer at a memorization temperature is 0.7 times or less than a coercive force at room temperature, and a heat conductivity of a center portion of an electrode formed on one side of the memory layer in the direction of the layer surface is lower than a heat conductivity of surroundings thereof.

    摘要翻译： 一种磁存储器件，包括在层表面上具有垂直磁化的存储层，其磁化方向根据信息而改变; 以及对存储层提供的参考层，并且是在层表面上具有垂直磁化的信息的基础，其中存储器件通过在电流流动时产生的自旋转矩反转存储层的磁化来存储信息 在由记忆层，非磁化层和参考层制成的层之间，存储层在记忆温度下的矫顽力为室温下的矫顽力的0.7倍以下，导热系数为 在层表面方向上形成在存储层的一侧的电极低于其周围的导热率。