公开(公告)号：US10884957B2

公开(公告)日：2021-01-05

申请号：US16160952

申请日：2018-10-15

Applicant: Intel Corporation

Inventor： Amrita Mathuriya ,  Sasikanth Manipatruni ,  Victor W. Lee ,  Abhishek Sharma ,  Huseyin E. Sumbul ,  Gregory Chen ,  Raghavan Kumar ,  Phil Knag ,  Ram Krishnamurthy ,  Ian Young

IPC: G06F13/16 ,  G06F13/28 ,  G06N20/00

Abstract: Techniques and mechanisms for performing in-memory computations with circuitry having a pipeline architecture. In an embodiment, various stages of a pipeline each include a respective input interface and a respective output interface, distinct from said input interface, to couple to different respective circuitry. These stages each further include a respective array of memory cells and circuitry to perform operations based on data stored by said array. A result of one such in-memory computation may be communicated from one pipeline stage to a respective next pipeline stage for use in further in-memory computations. Control circuitry, interconnect circuitry, configuration circuitry or other logic of the pipeline precludes operation of the pipeline as a monolithic, general-purpose memory device. In other embodiments, stages of the pipeline each provide a different respective layer of a neural network.

公开(公告)号：US10748603B2

公开(公告)日：2020-08-18

申请号：US16146473

申请日：2018-09-28

Applicant: Intel Corporation

Inventor： Huseyin Ekin Sumbul ,  Gregory K. Chen ,  Raghavan Kumar ,  Phil Knag ,  Abhishek Sharma ,  Sasikanth Manipatruni ,  Amrita Mathuriya ,  Ram Krishnamurthy ,  Ian A. Young

IPC: G11C8/00 ,  G11C11/418 ,  G06F9/30 ,  G11C11/419 ,  G11C13/00 ,  G11C7/10 ,  G11C11/54 ,  G06N3/063 ,  G06N3/08 ,  G11C7/18 ,  G06F7/544 ,  G11C11/16

Abstract: A memory circuit has compute-in-memory circuitry that enables a multiply-accumulate (MAC) operation based on shared charge. Row access circuitry drives multiple rows of a memory array to multiply a first data word with a second data word stored in the memory array. The row access circuitry drives the multiple rows based on the bit pattern of the first data word. Column access circuitry drives a column of the memory array when the rows are driven. Accessed rows discharge the column line in an accumulative fashion. Sensing circuitry can sense voltage on the column line. A processor in the memory circuit computes a MAC value based on the voltage sensed on the column.

公开(公告)号：US20200242458A1

公开(公告)日：2020-07-30

申请号：US16258522

申请日：2019-01-25

Applicant: Intel Corporation

Inventor： Sasikanth Manipatruni ,  Ram Krishnamurthy ,  Amrita Mathuriya ,  Dmitri Nikonov ,  Ian Young

IPC: G06N3/063 ,  G06F17/16 ,  G06N3/04

Abstract: Techniques are provided for implementing a hybrid processing architecture comprising a general-purpose processor (CPU) coupled to an analog in-memory artificial intelligence (AI) processor. A hybrid processor implementing the techniques according to an embodiment includes an AI processor configured to perform analog in-memory computations based on neural network (NN) weighting factors and input data provided by the CPU. The AI processor includes one or more NN layers. The NN layers include digital access circuits to receive data and weighting factors and to provide computational results. The NN layers also include memory circuits to store data and weights, and further include bit line processors and cross bit line processors to perform analog dot product computations between columns of the data memory circuits and the weight factor memory circuits. Some of the NN layers are configured as convolutional NN layers and others are configured as fully connected NN layers, according to some embodiments.