DISPLAY DEVICE
    21.
    发明申请

    公开(公告)号:US20210333673A1

    公开(公告)日:2021-10-28

    申请号:US17366441

    申请日:2021-07-02

    Abstract: A display device is provided. The display device includes a first substrate, a second substrate, a liquid-crystal layer, a first electrode, and an opposite electrode. The liquid-crystal layer is disposed between the first substrate and the second substrate. The first electrode is disposed on the first substrate. The opposite electrode is disposed on the side of the second substrate that faces the first substrate. The first electrode includes a first main portion and a plurality of first extending portions. The first extending portions are connected to the first main portion, at least one of the first extending portions includes a first side, a second side, and a curved structure. The curved structure connects the first side to the second side, and the curved structure has a first curvature radius greater than zero.

    DISPLAY DEVICE
    23.
    发明申请
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20190121206A1

    公开(公告)日:2019-04-25

    申请号:US16223355

    申请日:2018-12-18

    Abstract: A display device is disclosed, which includes: a substrate; a scan line having an extension direction, disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the gate electrode; source and drain electrodes disposed on the semiconductor layer; an insulating layer including a via hole and disposed on the drain electrode; a first transparent conductive layer disposed on the insulating layer, wherein a part of the first transparent conductive layer electrically connects to the drain electrode through the via hole; and a second transparent conductive layer disposed between the substrate and the first transparent conductive layer and not overlapping the via hole. Herein, the second transparent conductive layer has a first edge, the drain has a second edge, a minimum distance between the first edge and the second edge along a direction substantially perpendicular to the extension direction ranges from 0 μm to 4 μm.

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