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21.发明公开公开(公告)号：US20240094632A1
公开(公告)日：2024-03-21
申请号：US18521779
申请日：2023-11-28
Applicant: Inpria Corporation
Inventor： Kai Jiang , Stephen T. Meyers , Lauren B. McQuade , Jeremy T. Anderson , Brian J. Cardineau , Benjamin L. Clark , Dominick Smiddy , Margaret Wilson-Moses
CPC classification number: G03F7/0043 , B05D1/005 , G03F7/168 , G03F7/20
Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.
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公开(公告)号：US20230143592A1
公开(公告)日：2023-05-11
申请号：US17982013
申请日：2022-11-07
Applicant: Inpria Corporation
Inventor： Kai Jiang , Alan J. Telecky , Stephen T. Meyers
IPC: G03F7/004
CPC classification number: G03F7/0042 , G03F7/0048
Abstract: An organotin precursor solution is described comprising an organic solvent, an optional additive, and an organotin composition represented by one or more organotin compounds represented by the formula RSnL3, wherein each R is independently a hydrocarbyl ligand having from 1 to 31 carbon atoms and each L is independently a hydrolysable ligand, wherein the total concentration of Sn is from about 0.001 M to about 0.5 M. The solvent can comprises a linear alcohol with from 1 to 6 carbon atoms, and the organotin precursor solution can have an initial water content from about 100 ppm to about 10,000 ppm, in which the organotin precursor solution has a reduced rate of water dissipation relative to an equivalent organotin precursor solution formed with 4-methyl-2-pentanol. The organotin precursor solutions can be prepared through the selection of an appropriate stabilizing compound, which can be a linear, short chain alcohol and an appropriate additive.
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公开(公告)号：US20230004081A1
公开(公告)日：2023-01-05
申请号：US17903369
申请日：2022-09-06
Applicant: Inpria Corporation
Inventor： Stephen T. Meyers , Douglas A. Keszler , Kai Jiang , Jeremy T. Anderson , Andrew Grenville
Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.
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24.发明授权公开(公告)号：US11500284B2
公开(公告)日：2022-11-15
申请号：US17085024
申请日：2020-10-30
Applicant: Inpria Corporation
Inventor： Stephen T. Meyers , Jeremy T. Anderson , Joseph B. Edson , Kai Jiang , Douglas A. Keszler , Michael K. Kocsis , Alan J. Telecky , Brian J. Cardineau
Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.
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公开(公告)号：US20220334487A1
公开(公告)日：2022-10-20
申请号：US17858129
申请日：2022-07-06
Applicant: Inpria Corporation
Inventor： Stephen T. Meyers , Jeremy T. Anderson , Brian J. Cardineau , Joseph B. Edson , Kai Jiang , Douglas A. Keszler , Alan J. Telecky
IPC: G03F7/16 , G03F7/004 , G03F7/20 , C23C14/08 , G03F7/38 , C23C16/455 , G03F7/40 , G03F7/32 , C23C16/40
Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.
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Patent Agency Ranking
26.发明申请公开(公告)号：US20220187705A1
公开(公告)日：2022-06-16
申请号：US17689135
申请日：2022-03-08
Applicant: Inpria Corporation
Inventor： Kai Jiang , Stephen T. Meyers , Lauren B. McQuade , Jeremy T. Anderson , Brian J. Cardineau , Benjamin L. Clark , Dominick Smiddy , Margaret Wilson-Moses
Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.
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27.发明授权公开(公告)号：US11300876B2
公开(公告)日：2022-04-12
申请号：US16446732
申请日：2019-06-20
Applicant: Inpria Corporation
Inventor： Kai Jiang , Stephen T. Meyers , Lauren B. McQuade , Jeremy T. Anderson , Brian J. Cardineau , Benjamin L. Clark , Dominick Smiddy , Margaret Wilson-Moses
Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.
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28.发明授权公开(公告)号：US11187986B2
公开(公告)日：2021-11-30
申请号：US16810924
申请日：2020-03-06
Applicant: Inpria Corporation
Inventor： Mollie Waller , Brian J. Cardineau , Kai Jiang , Alan J. Telecky , Stephen T. Meyers , Benjamin L. Clark
Abstract: Apparatuses and methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.
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公开(公告)号：US20200257196A1
公开(公告)日：2020-08-13
申请号：US16861333
申请日：2020-04-29
Applicant: Inpria Corporation
Inventor： Stephen T. Meyers , Jeremy T. Anderson , Brian J. Cardineau , Joseph B. Edson , Kai Jiang , Douglas A. Keszler , Alan J. Telecky
Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.
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30.发明申请公开(公告)号：US20190391486A1
公开(公告)日：2019-12-26
申请号：US16446732
申请日：2019-06-20
Applicant: Inpria Corporation
Inventor： Kai Jiang , Stephen T. Meyers , Lauren B. McQuade , Jeremy T. Anderson , Brian J. Cardineau , Benjamin L. Clark , Dominick Smiddy , Margaret Wilson-Moses
Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.
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