公开(公告)号：US12129271B2

公开(公告)日：2024-10-29

申请号：US17380475

申请日：2021-07-20

Applicant: Inpria Corporation

Inventor： Brian J. Cardineau ,  Stephen T. Meyers ,  Kai Jiang ,  William Earley ,  Jeremy T. Anderson

IPC: C07F7/22 ,  G03F7/004 ,  G03F7/20 ,  G03F7/32

CPC classification number: C07F7/2224 ,  G03F7/0042 ,  G03F7/2004 ,  G03F7/325 ,  C07B2200/13

Abstract: Organotin clusters are described with the formula R3Sn3(O2CR′)5−x(OH)2+x(μ3-O) with 0≤x

公开(公告)号：US20240337926A1

公开(公告)日：2024-10-10

申请号：US18745066

申请日：2024-06-17

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Michael K. Kocsis ,  Alan J. Telecky ,  Brian J. Cardineau

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0042 ,  G03F7/0043 ,  G03F7/2004 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325

Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.

公开(公告)号：US10732505B1

公开(公告)日：2020-08-04

申请号：US16861333

申请日：2020-04-29

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/16 ,  G03F7/38 ,  G03F7/004 ,  C23C14/08 ,  C23C16/40 ,  G03F7/40 ,  G03F7/32 ,  G03F7/20

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US20190153001A1

公开(公告)日：2019-05-23

申请号：US16194491

申请日：2018-11-19

Applicant: Inpria Corporation

Inventor： Brian J. Cardineau ,  Stephen T. Meyers ,  Kai Jiang ,  William Earley

IPC: C07F7/22 ,  G03F7/004 ,  G03F7/20 ,  G03F7/32

Abstract: Organotin clusters are described with the formula R3Sn3(O2CR′)5-x(OH)2+x(μ3-O) with 0≤x

公开(公告)号：US20250085627A1

公开(公告)日：2025-03-13

申请号：US18830797

申请日：2024-09-11

Applicant: Inpria Corporation

Inventor： Brian J. Cardineau ,  Robert E. Jilek ,  Kai Jiang ,  Alexander C. Marwitz

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/20

Abstract: Organotin patterning compositions can incorporate Sn—F bonds to improve pattering performance. A precursor solution for a radiation patterning composition can comprise a blend of an organic solvent, an organotin composition represented by the formula RSnL3, and a compound capable of generating Sn—F bonds wherein R is a substituted or unsubstituted hydrocarbyl ligand with 1 to 31 carbon atoms and an Sn—C bond and L is a hydrolysable ligand. The fluoride source can be an ammonium fluoride. The patterning structure on a substrate surface has RSnFn moieties, generally within an oxo-hydroxo network.

公开(公告)号：US20240376135A1

公开(公告)日：2024-11-14

申请号：US18779539

申请日：2024-07-22

Applicant: Inpria Corporation

Inventor： Brian J. Cardineau ,  William Earley ,  Stephen T. Meyers ,  Kai Jiang ,  Jeremy T. Anderson

IPC: C07F7/22 ,  G03F7/004 ,  G03F7/20

Abstract: Patterning compositions are described based on organo tin dodecamers with hydrocarbyl ligands, oxo ligands, hydroxo ligands and carboxylato ligands. Alternative dodecamer embodiments have organo tin ligands in place of hydrocarbyl ligands. The organo tin ligands can be incorporated into the dodecamers from a monomer with the structure (RCC)3SnQ, where R is a hydrocarbyl group and Q is a alkyl tin moiety with a carbon bonded to the Sn atom of the monomer and with a Sn bonded as a replacement of a quaternary carbon atom with bonds to 4 carbon atoms. Some or all of the carboxylato and hydroxyl ligands can be replaced with fluoride ions. Good EUV patterning results are obtained with the dodecamer based patterning compositions.

公开(公告)号：US20240337925A1

公开(公告)日：2024-10-10

申请号：US18745039

申请日：2024-06-17

Applicant: Inpria Corporation

Inventor： Brian J. Cardineau ,  William Earley ,  Truman Wambach

IPC: G03F7/004 ,  C07F7/22 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0042 ,  C07F7/226 ,  G03F7/0045 ,  G03F7/0048 ,  G03F7/162 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/32

Abstract: Patterning with UV and EUV light is described with organo tin sulfide (and selenide) clusters. The clusters are solids at room temperature and are soluble in organic solvents that are not too polar. Irradiation can either fragment a carbon metal bond or crosslink unsaturated organic moieties to stabilize the irradiated material. The irradiated material then resists dissolving in organic solvents so that the un-irradiated material can be contacted with an organic solvent to develop the latent image formed with the radiation. Radiation patternable layers can be formed through coating a solution or through vapor deposition. Corresponding precursor solutions, structures and methods are described.

公开(公告)号：US11809081B2

公开(公告)日：2023-11-07

申请号：US17832920

申请日：2022-06-06

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/16 ,  G03F7/004 ,  G03F7/38 ,  C23C16/40 ,  C23C14/08 ,  C23C16/455 ,  G03F7/30 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

CPC classification number: G03F7/168 ,  C23C14/086 ,  C23C16/407 ,  C23C16/45523 ,  C23C16/45561 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/162 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/30 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US20230004090A1

公开(公告)日：2023-01-05

申请号：US17939328

申请日：2022-09-07

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/16 ,  G03F7/38 ,  C23C16/40 ,  C23C14/08 ,  G03F7/004 ,  C23C16/455 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US11537048B2

公开(公告)日：2022-12-27

申请号：US16987120

申请日：2020-08-06

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/16 ,  C23C14/08 ,  G03F7/38 ,  C23C16/40 ,  G03F7/004 ,  C23C16/455 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.