公开(公告)号：US20230102695A1

公开(公告)日：2023-03-30

申请号：US17485301

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： Carl H. NAYLOR ,  Kirby MAXEY ,  Kevin P. O'BRIEN ,  Chelsey DOROW ,  Sudarat LEE ,  Ashish Verma PENUMATCHA ,  Uygar E. AVCI ,  Matthew V. METZ ,  Scott B. CLENDENNING

IPC: H01L29/45 ,  H01L29/417 ,  H01L27/088

Abstract: Embodiments of the disclosure are directed to advanced integrated circuit (IC) structure fabrication and, in particular, to IC structures with graphene contacts. Other embodiments may be disclosed or claimed.

公开(公告)号：US20230101760A1

公开(公告)日：2023-03-30

申请号：US17485225

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： Kevin P. O'BRIEN ,  Uygar E. AVCI ,  Scott B. CLENDENNING ,  Chelsey DOROW ,  Sudarat LEE ,  Kirby MAXEY ,  Carl H. NAYLOR ,  Tristan A. TRONIC ,  Shriram SHIVARAMAN ,  Ashish Verma PENUMATCHA

IPC: H01L27/092 ,  H01L27/11 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L23/48 ,  H01L29/786

Abstract: Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a first transistor on a first level, and a second transistor on a second level above the first level. In an embodiment, an insulating layer is between the first level and the second level, and a via passes through the insulating layer, and electrically couples the first transistor to the second transistor. In an embodiment, the first transistor and the second transistor comprise a first channel, and a second channel over the first channel. In an embodiment, the first second transistor further comprise a gate structure between the first channel and the second channel, a source contact on a first end of the first channel and the second channel, and a drain contact on a second end of the first channel and the second channel.

公开(公告)号：US20230101370A1

公开(公告)日：2023-03-30

申请号：US17485181

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： Sudarat LEE ,  Chelsey DOROW ,  Kevin P. O'BRIEN ,  Carl H. NAYLOR ,  Kirby MAXEY ,  Charles MOKHTARZADEH ,  Ashish Verma PENUMATCHA ,  Scott B. CLENDENNING ,  Uygar E. AVCI

IPC: H01L29/76 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: Thin film transistors having multi-layer gate dielectric structures integrated with two-dimensional (2D) channel materials are described. In an example, an integrated circuit structure includes a two-dimensional (2D) material layer above a substrate. A gate stack is over the 2D material layer, the gate stack having a first side opposite a second side, and the gate stack having a gate electrode around a gate dielectric structure. A first gate spacer is on the 2D material layer and adjacent to the first side of the gate stack. A second gate spacer is on the 2D material layer and adjacent to the second side of the gate stack, wherein the first gate spacer and the second gate spacer are continuous with a layer of the gate dielectric structure. A first conductive structure is coupled to the 2D material layer and adjacent to the first gate spacer. A second conductive structure is coupled to the 2D material layer and adjacent to the second gate spacer.

公开(公告)号：US20230100713A1

公开(公告)日：2023-03-30

申请号：US17485302

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： Chelsey DOROW ,  Kevin P. O'BRIEN ,  Carl H. NAYLOR ,  Kirby MAXEY ,  Sudarat LEE ,  Ashish Verma PENUMATCHA ,  Uygar E. AVCI

IPC: H01L29/76 ,  H01L29/24 ,  H01L29/06 ,  H01L29/423 ,  H01L29/45 ,  H01L29/786

Abstract: Embodiments of the disclosure are directed to advanced integrated circuit (IC) structure fabrication and, in particular, IC structures with an improved two-dimensional (2D) channel architecture. Other embodiments may be disclosed or claimed.

公开(公告)号：US20220199799A1

公开(公告)日：2022-06-23

申请号：US17131706

申请日：2020-12-22

Applicant: Intel Corporation

Inventor： Kevin P. O'BRIEN ,  Chelsey DOROW ,  Carl NAYLOR ,  Kirby MAXEY ,  Tanay GOSAVI ,  Uygar E. AVCI ,  Ashish Verma PENUMATCHA ,  Chia-Ching LIN ,  Shriram SHIVARAMAN ,  Sudarat LEE

IPC: H01L29/49 ,  H01L29/51 ,  H01L29/786 ,  H01L29/06 ,  H01L29/24 ,  H01L29/66

Abstract: Thin film transistors having boron nitride integrated with two-dimensional (2D) channel materials are described. In an example, an integrated circuit structure includes a first gate stack above a substrate. A 2D channel material layer is above the first gate stack. A second gate stack is above the 2D channel material layer, the second gate stack having a first side opposite a second side. A first conductive contact is adjacent the first side of the second gate stack and in contact with the 2D channel material layer. A second conductive contact is adjacent the second side of the second gate stack and in contact with the 2D channel material layer. A hexagonal boron nitride (hBN) layer is included between the first gate stack and the 2D channel material layer, between the second gate stack and the 2D channel material layer, or both.

公开(公告)号：US20210391478A1

公开(公告)日：2021-12-16

申请号：US16902069

申请日：2020-06-15

Applicant: Intel Corporation

Inventor： Kirby MAXEY ,  Chelsey DOROW ,  Kevin P. O'BRIEN ,  Carl NAYLOR ,  Ashish Verma PENUMATCHA ,  Tanay GOSAVI ,  Uygar E. AVCI ,  Shriram SHIVARAMAN

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L29/24

Abstract: Embodiments include two-dimensional (2D) semiconductor sheet transistors and methods of forming such devices. In an embodiment, a semiconductor device comprises a stack of 2D semiconductor sheets, where individual ones of the 2D semiconductor sheets have a first end and a second end opposite from the first end. In an embodiment, a first spacer is over the first end of the 2D semiconductor sheets, and a second spacer is over the second end of the 2D semiconductor sheets. Embodiments further comprise a gate electrode between the first spacer and the second spacer, a source contact adjacent to the first end of the 2D semiconductor sheets, and a drain contact adjacent to the second end of the 2D semiconductor sheets.