公开(公告)号：US20140264321A1

公开(公告)日：2014-09-18

申请号：US14136000

申请日：2013-12-20

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang ,  Charlene Chen ,  Sang Lee ,  Minh Huu Le ,  Jeroen Van Duren

IPC: H01L27/12 ,  H01L21/02

CPC classification number: H01L21/30604 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/32134 ,  H01L21/465 ,  H01L21/707 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: In some embodiments, oxidants such as ozone (O3) and/or nitrous oxide (N2O) are used during the reactive sputtering of metal-based semiconductor layers used in TFT devices. The O3 and N2O gases are stronger oxidants and result in a decrease in the concentration of oxygen vacancies within the metal-based semiconductor layer. The decrease in the concentration of oxygen vacancies may result in improved stability under conditions of negative bias illumination stress (NBIS).

Abstract translation: 在一些实施方案中，在TFT器件中使用的金属基半导体层的反应溅射期间，使用氧化剂如臭氧（O 3）和/或一氧化二氮（N 2 O）。 O 3和N 2 O气体是更强的氧化剂并且导致金属基半导体层内的氧空位浓度的降低。 氧空位浓度的降低可能导致负偏压照明应力（NBIS）条件下的稳定性提高。

公开(公告)号：US20140041722A1

公开(公告)日：2014-02-13

申请号：US14053863

申请日：2013-10-15

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang ,  Sang Lee ,  Wei Liu ,  Sandeep Nijhawan ,  Jeroen Van Duren

IPC: H01L31/065

CPC classification number: H01L31/065 ,  H01L31/0322 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/50 ,  Y02E10/541

Abstract: A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25−0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency.

Abstract translation: 一种制造高效CIGS太阳能电池的方法，包括从约25原子％至约66原子％之间的Ga浓度的溅射靶中沉积Ga浓度（Ga /（Ga + In）= 0.25-0.66）。 此外，该方法包括与导致高效率的高温退火工艺相结合的高温硒化工艺。

公开(公告)号：US09299571B2

公开(公告)日：2016-03-29

申请号：US14134678

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang ,  Sang Lee ,  Jeroen Van Duren

IPC: H01L21/00 ,  H01L27/12 ,  H01L21/306 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L21/465 ,  H01L21/70 ,  H01L29/45

CPC classification number: H01L21/30604 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/32134 ,  H01L21/465 ,  H01L21/707 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A gradient in the composition of at least one of the elements of a metal-based semiconductor layer is introduced as a function of depth through the layer. The gradient(s) influence the current density response of the device at different gate voltages. In some embodiments, the composition of an element (e.g. Ga) is greater at the interface between the metal-based semiconductor layer and the source/drain layers. The shape of the gradient profile is one of linear, stepped, parabolic, exponential, and the like.

Abstract translation: 作为穿过该层的深度的函数，引入金属基半导体层的至少一个元素的组成的梯度。 梯度影响器件在不同栅极电压下的电流密度响应。 在一些实施例中，元件（例如Ga）的组成在金属基半导体层和源极/漏极层之间的界面处较大。 梯度轮廓的形状是直线，阶梯，抛物线，指数等之一。

公开(公告)号：US09202690B2

公开(公告)日：2015-12-01

申请号：US14137717

申请日：2013-12-20

Applicant: Intermolecular, Inc. ,  LG Display Co., Ltd.

Inventor： Sang Lee ,  Stuart Brinkley ,  Yoon-Kyung Chang ,  Seon-Mee Cho ,  Min-Cheol Kim ,  Kwon-Sik Park ,  Woosup Shin

IPC: H01L21/00 ,  H01L21/16 ,  H01L29/10 ,  H01L29/12 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L21/02667 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/7869

Abstract: Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. An IGZO layer is formed above the substrate. The IGZO layer is annealed in an environment consisting essentially of nitrogen gas.

Abstract translation: 本文所述的实施方案提供了形成晶体铟镓锌氧化物（IGZO）的方法。 提供基板。 在基板上形成IGZO层。 IGZO层在基本上由氮气组成的环境中退火。

公开(公告)号：US20150179684A1

公开(公告)日：2015-06-25

申请号：US14135086

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Jeroen Van Duren ,  Sang Lee ,  Minh Huu Le

IPC: H01L27/12 ,  H01L21/465 ,  H01L21/66 ,  H01L21/02

CPC classification number: H01L27/1259 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/465 ,  H01L22/14 ,  H01L22/20 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: Methods for HPC techniques are applied to the processing of site-isolated regions (SIR) on a substrate to form at least a portion of a TFT device used in display applications. The processing may be applied to at least one of gate dielectric deposition, gate dielectric patterning, metal-based semiconductor deposition, metal-based patterning, etch stop deposition, etch stop patterning, source/drain deposition, or source/drain patterning. The SIRs may be defined during the deposition process with uniform deposition within each SIR or the SIRs may be defined subsequent to the deposition of layers wherein the layers are deposited with a gradient in one or more properties across the substrate.

Abstract translation: 将HPC技术的方法应用于基板上的位置隔离区域（SIR）的处理，以形成在显示应用中使用的TFT器件的至少一部分。 该处理可以应用于栅极介电沉积，栅极电介质图案化，基于金属的半导体沉积，基于金属的图案化，蚀刻停止沉积，蚀刻停止图案化，源极/漏极沉积或源极/漏极图案化中的至少一个。 可以在沉积过程期间限定SIR，每个SIR内均匀沉积，或者可以在层的沉积之后定义SIR，其中层以跨越衬底的一个或多个特性的梯度沉积。

公开(公告)号：US20150179683A1

公开(公告)日：2015-06-25

申请号：US14134571

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Minh Huu Le ,  Sang Lee ,  Jeroen Van Duren

IPC: H01L27/12 ,  H01L21/66 ,  H01L21/02

CPC classification number: H01L21/02565 ,  H01L21/02554 ,  H01L22/14 ,  H01L22/20 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693

Abstract: Methods for HPC techniques are applied to the processing of site-isolated regions (SIR) on a substrate to form at least a portion of a TFT device used in display applications. The processing may be applied to at least one of gate dielectric deposition, gate dielectric patterning, metal-based semiconductor (e.g. ZnOx, ZnSnOx, ZnInOx, or ZnGaOx) deposition, metal-based semiconductor (e.g. ZnOx, ZnSnOx, ZnInOx, or ZnGaOx) patterning, etch stop deposition, etch stop patterning, source/drain deposition, or source/drain patterning. The SIRs may be defined during the deposition process with uniform deposition within each SIR or the SIRs may be defined subsequent to the deposition of layers wherein the layers are deposited with a gradient in one or more properties across the substrate.

Abstract translation: 将HPC技术的方法应用于基板上的位置隔离区域（SIR）的处理，以形成在显示应用中使用的TFT器件的至少一部分。 该处理可以应用于栅极介电沉积，栅极电介质图案化，金属基半导体（例如ZnO x，ZnSnO x，ZnInO x或ZnGaO x）沉积，金属基半导体（例如ZnO x，ZnSnO x，ZnInO x或ZnGaO x）中的至少一种， 图案化，蚀刻停止沉积，蚀刻停止图案化，源极/漏极沉积或源极/漏极图案化。 可以在沉积过程期间限定SIR，每个SIR内均匀沉积，或者可以在层的沉积之后定义SIR，其中层以跨越衬底的一个或多个特性的梯度沉积。

公开(公告)号：US20150179448A1

公开(公告)日：2015-06-25

申请号：US14137717

申请日：2013-12-20

Applicant: LG Display Co., Ltd. ,  Intermolecular, Inc.

Inventor： Sang Lee ,  Stuart Brinkley ,  Yoon-Kyung Chang ,  Seon-Mee Cho ,  Min-Cheol Kim ,  Kwon-Sik Park ,  Woosup Shin

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/02667 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/7869

Abstract: Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. An IGZO layer is formed above the substrate. The IGZO layer is annealed in an environment consisting essentially of nitrogen gas.

Abstract translation: 本文所述的实施方案提供了形成晶体铟镓锌氧化物（IGZO）的方法。 提供基板。 在基板上形成IGZO层。 IGZO层在基本上由氮气组成的环境中退火。

公开(公告)号：US08859406B2

公开(公告)日：2014-10-14

申请号：US13737127

申请日：2013-01-09

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang ,  Sang Lee ,  Wei Liu ,  Sandeep Nijhawan ,  Jeroen Van Duren

IPC: H01L21/20 ,  H01L21/36 ,  H01L33/00 ,  H01L31/065 ,  H01L31/18

CPC classification number: H01L31/065 ,  H01L31/0322 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/50 ,  Y02E10/541

Abstract: A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25-0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency.

Abstract translation: 一种制造高效CIGS太阳能电池的方法，包括从约25原子％至约66原子％之间的Ga浓度的溅射靶中沉积Ga浓度（Ga /（Ga + In）= 0.25-0.66）。 此外，该方法包括与导致高效率的高温退火工艺相结合的高温硒化工艺。