公开(公告)号：US20150336792A1

公开(公告)日：2015-11-26

申请号：US14590839

申请日：2015-01-06

Applicant: InvenSense, Inc.

Inventor： Kegang HUANG ,  Jongwoo SHIN ,  Martin LIM ,  Michael Julian DANEMAN ,  Joseph SEEGER

IPC: B81B7/00

CPC classification number: B81C1/00301 ,  B81B7/0064 ,  B81B2207/098 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/031

Abstract: A method of fabricating electrical connections in an integrated MEMS device is disclosed. The method comprises forming a MEMS wafer. Forming a MEMS wafer includes forming one cavity in a first semiconductor layer, bonding the first semiconductor layer to a second semiconductor layer with a dielectric layer disposed between the first semiconductor layer and the second semiconductor layer, and etching at least one via through the second semiconductor layer and the dielectric layer and depositing a conductive material on the second semiconductor layer and filling the at least one via. Forming a MEMS wafer also includes patterning and etching the conductive material to form one standoff and depositing a germanium layer on the conductive material, patterning and etching the germanium layer, and patterning and etching the second semiconductor layer to define one MEMS structure. The method also includes bonding the MEMS wafer to a base substrate.

Abstract translation: 公开了一种在集成MEMS器件中制造电连接的方法。 该方法包括形成MEMS晶片。 形成MEMS晶片包括在第一半导体层中形成一个空腔，将第一半导体层与设置在第一半导体层和第二半导体层之间的电介质层结合到第二半导体层，并且通过第二半导体蚀刻至少一个通孔 层和介电层，并在第二半导体层上沉积导电材料并填充至少一个通孔。 形成MEMS晶片还包括图案化和蚀刻导电材料以形成一个间隔并在导电材料上沉积锗层，图案化和蚀刻锗层，以及图案化和蚀刻第二半导体层以限定一个MEMS结构。 该方法还包括将MEMS晶片接合到基底基板。

公开(公告)号：US20140213007A1

公开(公告)日：2014-07-31

申请号：US14033366

申请日：2013-09-20

Applicant: InvenSense, Inc.

Inventor： Kegang HUANG ,  Jongwoo SHIN ,  Martin LIM ,  Michael Julian DANEMAN ,  Joseph SEEGER

IPC: B81C1/00

CPC classification number: B81C1/00301 ,  B81B7/0064 ,  B81B2207/098 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/031

Abstract: A method of fabricating electrical connections in an integrated MEMS device is disclosed. The method comprises forming a MEMS wafer. Forming a MEMS wafer includes forming one cavity in a first semiconductor layer, bonding the first semiconductor layer to a second semiconductor layer with a dielectric layer disposed between the first semiconductor layer and the second semiconductor layer, and etching at least one via through the second semiconductor layer and the dielectric layer and depositing a conductive material on the second semiconductor layer and filling the at least one via. Forming a MEMS wafer also includes patterning and etching the conductive material to form one standoff and depositing a germanium layer on the conductive material, patterning and etching the germanium layer, and patterning and etching the second semiconductor layer to define one MEMS structure. The method also includes bonding the MEMS wafer to a base substrate.

公开(公告)号：US20140151869A1

公开(公告)日：2014-06-05

申请号：US14176964

申请日：2014-02-10

Applicant: INVENSENSE, INC.

Inventor： Goksen G. YARALIOGLU ,  Martin LIM

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0087 ,  B81B2207/012 ,  B81C1/0069 ,  H01L23/345 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A system and method for controlling temperature of a MEMS sensor are disclosed. In a first aspect, the system comprises a MEMS cap encapsulating the MEMS sensor and a CMOS die vertically arranged to the MEMS cap. The system includes a heater integrated into the MEMS cap. The integrated heater is activated to control the temperature of the MEMS sensor. In a second aspect, the method comprises encapsulating the MEMS sensor with a MEMS cap and coupling a CMOS die to the MEMS cap. The method includes integrating a heater into the MEMS cap. The integrated heater is activated to control the temperature of the MEMS sensor.

Abstract translation: 公开了一种用于控制MEMS传感器的温度的系统和方法。 在第一方面，该系统包括封装MEMS传感器的MEMS盖和垂直地布置到MEMS盖的CMOS模头。 该系统包括集成到MEMS盖中的加热器。 集成加热器被激活以控制MEMS传感器的温度。 在第二方面，该方法包括用MEMS盖封装MEMS传感器并将CMOS管芯耦合到MEMS盖。 该方法包括将加热器集成到MEMS盖中。 集成加热器被激活以控制MEMS传感器的温度。