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21.发明授权Thermally stable oxidized bias layer structure for magnetoresistive magnetic head for a hard disk drive 失效用于硬盘驱动器的磁阻磁头的热稳定氧化偏压层结构公开(公告)号：US07085110B2
公开(公告)日：2006-08-01
申请号：US10615554
申请日：2003-07-07
IPC分类号： G11B5/33
CPC分类号： G11B5/3906 , Y10T29/49032
摘要： The magnetic head of the present invention includes a magnetoresistive read head element in which a magnetic bias layer is deposited across the surface of the wafer above the free magnetic layer. Central portions of the biasing layer that correspond to the read head track width are oxidized to essentially remove the magnetic moment of the bias layer material in those central locations. An oxygen diffusion barrier layer is then deposited upon the oxidized central portions of the biasing layer to prevent diffusion or migration of oxygen from the oxidized central regions of the biasing layer. An insulation layer, a second magnetic shield layer and further structures of the magnetic head are subsequently fabricated.
摘要翻译： 本发明的磁头包括磁阻读头元件，其中磁偏置层跨过自由磁层上的晶片表面。 对应于读头磁道宽度的偏置层的中心部分被氧化以基本上去除那些中心位置处的偏置层材料的磁矩。 然后将氧扩散阻挡层沉积在偏置层的氧化中心部分上，以防止氧从偏置层的氧化中心区域扩散或迁移。 随后制造绝缘层，第二磁屏蔽层和磁头的其它结构。
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22.发明授权Current perpendicular to plane GMR and TMR sensors with improved magnetic properties using Ru/Si seed layers 有权电流垂直于平面GMR和TMR传感器具有改进的磁性能使用Ru / Si种子层公开(公告)号：US08068315B2
公开(公告)日：2011-11-29
申请号：US11862119
申请日：2007-09-26
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996
摘要： A magnetoresisive sensor having a thin seed layer that provides an exceptionally smooth interface between layers of the sensor stack. The exceptionally smooth interface provided by the seed layer reduces interlayer exchange coupling allowing the non-magnetic spacer layer (or barrier layer) to be very thin. The seed layer includes a thin layer of Ru and a thin layer of Si which intermix to form a homogeneous, amorphous thin seed layer of Ru-silicide.
摘要翻译： 具有薄种子层的磁感应传感器，其在传感器堆叠的层之间提供非常平滑的界面。 由种子层提供的非常平滑的界面减少层间交换耦合，使得非磁性间隔层（或阻挡层）非常薄。 种子层包括Ru的薄层和Si的薄层，其混合以形成Ru-硅化物的均匀的非晶态薄晶种层。
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23.发明申请Magnetoresistive sensor having shape enhanced pinning and low lead resistance 失效具有形状增强钉扎和低引线电阻的磁阻传感器公开(公告)号：US20080055794A1
公开(公告)日：2008-03-06
申请号：US11513479
申请日：2006-08-30
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3163 , G11B5/3932 , G11B5/398 , G11B2005/3996
摘要： A magnetoresistive sensor having a pinned layer that extends beyond the free layer in the stripe height direction for improved shape enhanced pinning. The sensor includes hard bias layers and leads that extend in the stripe height direction beyond the stripe height of the free layer, providing increased conductive material for improved conduction of sense current to the sensor. The hard bias layers contact the sensor stack in the region between the ABS and the stripe height of the free layer, but are electrically insulated from the pinned layer in regions beyond the stripe height of the free layer by a layer of conformally deposited non-magnetic, electrically insulating material such as alumina.
摘要翻译： 磁阻传感器具有在条带高度方向上延伸超过自由层的钉扎层，以改善形状增强的钉扎。 传感器包括硬偏压层和引线，其在条带高度方向上延伸超过自由层的条带高度，提供增加的导电材料，以改善感测电流对传感器的传导。 硬偏置层在ABS和自由层的条纹高度之间的区域中接触传感器堆叠，但是在超过自由层的条纹高度的区域中的被钉扎层与被固定层之间通过共形沉积的非磁性层 ，电绝缘材料如氧化铝。
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24.发明授权Self-pinned spin valve sensor with a high coercivity antiparallel (AP) pinned layer 有权具有高矫顽力反平行（AP）钉扎层的自固定自旋阀传感器公开(公告)号：US07177120B2
公开(公告)日：2007-02-13
申请号：US10727882
申请日：2003-12-03
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B2005/3996
摘要： A magnetic head assembly has a read head that includes a sensor wherein the sensor includes a self-pinned antiparallel (AP) pinned layer structure, a ferromagnetic free layer structure that has a magnetic moment that is free to rotate in response to signal fields and a spacer layer which is located between the free layer and AP pinned layer structures. The self-pinned AP pinned layer structure includes first and second antiparallel (AP) pinned layers, an antiparallel coupling (APC) layer located between and interfacing the first and second AP pinned layers wherein the second AP pinned layer is located between the first AP pinned layer and the spacer layer. The first AP pinned layer is composed of cobalt platinum chromium (CoPtCr).
摘要翻译： 磁头组件具有读头，该读头包括传感器，其中传感器包括自固定反平行（AP）钉扎层结构，铁磁自由层结构具有响应于信号场自由旋转的磁矩和 间隔层位于自由层和AP钉扎层结构之间。 自固定AP钉扎层结构包括第一和第二反平行（AP）钉扎层，位于第一和第二AP钉扎层之间并且连接第一和第二AP钉扎层的反平行耦合（APC）层，其中第二AP钉扎层位于第一AP钉扎 层和间隔层。 第一个AP钉扎层由钴铂铬（CoPtCr）组成。
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25.发明授权Spin valve sensor having an antiparallel (AP) self-pinned layer structure comprising cobalt for high magnetostriction 有权旋转阀传感器具有包括用于高磁致伸缩的钴的反平行（AP）自固定层结构公开(公告)号：US07119997B2
公开(公告)日：2006-10-10
申请号：US10675832
申请日：2003-09-30
IPC分类号： G11B5/127
CPC分类号： G11B5/332
摘要： In one illustrative embodiment of the invention, a spin valve sensor of a magnetic head has a free layer structure; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer structure and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer; a second AP pinned layer; an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. At least one of the first and the second AP pinned layers is made of cobalt having no iron content. The other AP pinned layer may be formed of cobalt, cobalt-iron, or other suitable material. The use of cobalt in the AP self-pinned layer structure increases its magnetostriction to increase the self-pinning effect. Preferably, the first AP pinned layer is cobalt-iron and the second AP pinned layer is cobalt which provides for both an increase in magnetostriction and magnetoresistive coefficient Δr/R of the sensor.
摘要翻译： 在本发明的一个说明性实施例中，磁头的自旋阀传感器具有自由层结构; 反平行（AP）自固定层结构; 以及在自由层结构和AP自固位层结构之间的非磁性导电间隔层。 AP自固定层结构包括第一AP固定层; 第二个AP钉扎层; 形成在第一和第二AP钉扎层之间的反平行耦合（APC）层。 第一和第二AP钉扎层中的至少一个由不含铁含量的钴制成。 另一个AP钉扎层可以由钴，钴 - 铁或其它合适的材料形成。 在AP自固化层结构中使用钴增加其磁致伸缩以增加自固定效应。 优选地，第一AP钉扎层是钴铁，并且第二AP钉扎层是钴，其提供传感器的磁致伸缩系数和磁阻系数Deltar / R的增加。
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26.发明授权Magnetoresistive sensor having an anisotropic hard bias with high coercivity 有权具有高矫顽力的各向异性硬偏置的磁阻传感器公开(公告)号：US07848065B2
公开(公告)日：2010-12-07
申请号：US11615825
申请日：2006-12-22
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932
摘要： A magnetoresistive sensor having magnetically anisotropic bias layers for biasing the free layer of the sensor. Hard bias structures for biasing the magnetization of the free layer are formed at either side of the sensor stack, and each of the hard bias structure includes a hard magnetic layer that has a magnetic anisotropy to enhance the stability of the biasing. The hard bias structure can include a Cr under-layer having a surface that has been treated by a low power angled ion milling to form it with an anisotropic surface texture. A layer of Cr—Mo alloy is formed over the Cr under-layer and the hard magnetic material layer is formed over the Cr—Mo alloy layer. The anisotropic surface texture of the Cr layer induces an aligned crystalline structure in the hard magnetic layer that causes the hard magnetic layer to have a magnetic anisotropy.
摘要翻译： 具有用于偏置传感器自由层的磁各向异性偏置层的磁阻传感器。 在传感器堆叠的任一侧形成用于偏置自由层的磁化的硬偏置结构，并且每个硬偏置结构都包括具有磁各向异性以增强偏置稳定性的硬磁性层。 硬偏压结构可以包括具有通过低功率角度离子铣削处理以形成各向异性表面纹理的表面的Cr底层。 在Cr底层上形成Cr-Mo合金层，在Cr-Mo合金层上形成硬磁性体层。 Cr层的各向异性表面结构在硬磁性层中引起对准的结晶结构，使得硬磁性层具有磁各向异性。
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27.发明授权Magnetoresistive sensor having shape enhanced pinning and low lead resistance 失效具有形状增强钉扎和低引线电阻的磁阻传感器公开(公告)号：US07602589B2
公开(公告)日：2009-10-13
申请号：US11513479
申请日：2006-08-30
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3163 , G11B5/3932 , G11B5/398 , G11B2005/3996
摘要： A magnetoresistive sensor having a pinned layer that extends beyond the free layer in the stripe height direction for improved shape enhanced pinning. The sensor includes hard bias layers and leads that extend in the stripe height direction beyond the stripe height of the free layer, providing increased conductive material for improved conduction of sense current to the sensor. The hard bias layers contact the sensor stack in the region between the ABS and the stripe height of the free layer, but are electrically insulated from the pinned layer in regions beyond the stripe height of the free layer by a layer of conformally deposited non-magnetic, electrically insulating material such as alumina.
摘要翻译： 磁阻传感器具有在条带高度方向上延伸超过自由层的钉扎层，以改善形状增强的钉扎。 传感器包括硬偏压层和引线，其在条带高度方向上延伸超过自由层的条带高度，提供增加的导电材料，以改善感测电流对传感器的传导。 硬偏置层在ABS和自由层的条纹高度之间的区域中接触传感器堆叠，但是在超过自由层的条纹高度的区域中的被钉扎层与被固定层之间通过共形沉积的非磁性层 ，电绝缘材料如氧化铝。
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28.发明申请CURRENT PERPENDICULAR TO PLANE GMR AND TMR SENSORS WITH IMPROVED MAGNETIC PROPERTIES USING Ru/Si SEED LAYERS 有权目前使用Ru / Si SEED层的具有改进磁性的GMR和TMR传感器的平面布置公开(公告)号：US20090080122A1
公开(公告)日：2009-03-26
申请号：US11862119
申请日：2007-09-26
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996
摘要： A magnetoresisive sensor having a thin seed layer that provides an exceptionally smooth interface between layers of the sensor stack. The exceptionally smooth interface provided by the seed layer reduces interlayer exchange coupling allowing the non-magnetic spacer layer (or barrier layer) to be very thin. The seed layer includes a thin layer of Ru and a thin layer of Si which intermix to form a homogeneous, amorphous thin seed layer of Ru-silicide.
摘要翻译： 具有薄种子层的磁感应传感器，其在传感器堆叠的层之间提供非常平滑的界面。 由种子层提供的非常平滑的界面减少层间交换耦合，使得非磁性间隔层（或阻挡层）非常薄。 种子层包括Ru的薄层和Si的薄层，其混合以形成Ru-硅化物的均匀的非晶态薄晶种层。
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29.发明授权Magnetoresistive sensor having a high coercivity hard magnetic bias layer deposited over a metallic layer 有权具有沉积在金属层上的高矫顽力硬磁偏置层的磁阻传感器公开(公告)号：US07310209B2
公开(公告)日：2007-12-18
申请号：US10954803
申请日：2004-09-29
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3932
摘要： A magnetoresistive sensor having hard bias layers constructed of CoPtCrB, which high coercivity when deposited over crystalline materials such as an AFM layer or other sensor material. The bias layer material exhibits high coercivity and high moment even when deposited over a crystalline structure such as that of an underlying sensor material by not assuming the crystalline structure of the underlying crystalline layer. The bias layer material is especially beneficial for use in a partial mill sensor design wherein a portion of the sensor layers extends beyond the active area of the sensor and the bias layer must be deposited on the extended portion of sensor material.
摘要翻译： 具有由CoPtCrB构成的硬偏置层的磁致电阻传感器，其在诸如AFM层或其它传感器材料的结晶材料上沉积时具有高的矫顽力。 即使当沉积在诸如下面的传感器材料的结晶结构上时，偏置层材料通过不假定下面的晶体层的晶体结构，表现出高的矫顽力和高的力矩。 偏置层材料特别有利于在部分磨机传感器设计中使用，其中传感器层的一部分延伸超出传感器的有效区域，并且偏置层必须沉积在传感器材料的延伸部分上。
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30.发明授权公开(公告)号：US07268985B2
公开(公告)日：2007-09-11
申请号：US10856710
申请日：2004-05-28
CPC分类号： G11B5/3932 , B82Y25/00 , G01R33/093
摘要： A magnetic head having an improved read head structure. The read head includes a free magnetic layer with hard bias elements disposed proximate its ends, where the hard bias elements include an improved hard bias magnetic grain structure. This is accomplished by fabricating the hard bias element as a bilayer structure having a first hard bias sublayer, a nonmagnetic midlayer and a second hard bias sublayer. The midlayer is preferably composed of a nonmagnetic material such as chromium, and the hard bias sublayers are composed of a magnetic material such as CoPtCr. Each sublayer is formed with its own magnetic grains, and because there are two sublayers, the hard bias element is fabricated with approximately twice the number of magnetic grains as the prior art single layer hard bias element.
摘要翻译： 具有改进的读头结构的磁头。 读头包括具有靠近其端部设置的硬偏置元件的自由磁性层，其中硬偏置元件包括改进的硬偏磁晶粒结构。 这是通过将硬偏压元件制造成具有第一硬偏压子层，非磁性中间层和第二硬偏压子层的双层结构来实现的。 中间层优选由诸如铬的非磁性材料构成，并且硬偏置子层由诸如CoPtCr的磁性材料构成。 每个子层由其自身的磁性颗粒形成，并且由于存在两个子层，所以用现有技术的单层硬偏置元件的大约两倍的磁性颗粒制造硬偏置元件。
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