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    Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip
    3.
    发明授权
    Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip 失效
    自固定自旋阀传感器，其第一个AP固定层比第二个AP钉扎层厚，以降低幅度翻转的可能性

    公开(公告)号：US07466524B2

    公开(公告)日：2008-12-16

    申请号：US11301877

    申请日：2005-12-13

    申请人： James Mac Freitag ,  Hardayal Singh Gill ,  Jih-Shiuan Luo ,  Mustafa Michael Pinarbasi

    发明人： James Mac Freitag ,  Hardayal Singh Gill ,  Jih-Shiuan Luo ,  Mustafa Michael Pinarbasi

    IPC分类号： G11B5/127

    CPC分类号： G11B5/33 ,  G11B5/3932 ,  G11B2005/3996

    摘要： In one illustrative example, a spin valve (SV) sensor of the self-pinned type includes a free layer; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer having a first thickness; a second AP pinned layer having a second thickness; and an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. The first thickness is slightly greater than the second thickness. Configured as such, the AP pinned layer structure provides for a net magnetic moment that is in the same direction as a magnetic field produced by the sense current flow, which reduces the likelihood of amplitude flip in the SV sensor.

    摘要翻译： 在一个说明性示例中，自固定型的自旋阀（SV）传感器包括自由层; 反平行（AP）自固定层结构; 以及在自由层和AP自固位层结构之间的非磁性导电间隔层。 AP自固定层结构包括具有第一厚度的第一AP钉扎层; 具有第二厚度的第二AP钉扎层; 以及形成在第一和第二AP钉扎层之间的反平行耦合（APC）层。 第一厚度略大于第二厚度。 如此配置，AP钉扎层结构提供了与由感测电流产生的磁场方向相同的净磁矩，这降低了SV传感器中振幅翻转的可能性。

    Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip
    4.
    发明授权
    Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip 失效
    自固定自旋阀传感器，其第一个AP固定层比第二个AP钉扎层厚，以降低幅度翻转的可能性

    公开(公告)号：US07019949B2

    公开(公告)日：2006-03-28

    申请号：US10732200

    申请日：2003-12-10

    申请人： James Mac Freitag ,  Hardayal Singh Gill ,  Jih-Shiuan Luo ,  Mustafa Michael Pinarbasi

    发明人： James Mac Freitag ,  Hardayal Singh Gill ,  Jih-Shiuan Luo ,  Mustafa Michael Pinarbasi

    IPC分类号： G11B5/127

    CPC分类号： G11B5/33 ,  G11B5/3932 ,  G11B2005/3996

    摘要： In one illustrative example, a spin valve (SV) sensor of the self-pinned type includes a free layer; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer having a first thickness; a second AP pinned layer having a second thickness; and an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. The first thickness is slightly greater than the second thickness. Configured as such, the AP pinned layer structure provides for a net magnetic moment that is in the same direction as a magnetic field produced by the sense current flow, which reduces the likelihood of amplitude flip in the SV sensor.

    摘要翻译： 在一个说明性示例中，自固定型的自旋阀（SV）传感器包括自由层; 反平行（AP）自固定层结构; 以及在自由层和AP自固位层结构之间的非磁性导电间隔层。 AP自固定层结构包括具有第一厚度的第一AP钉扎层; 具有第二厚度的第二AP钉扎层; 以及形成在第一和第二AP钉扎层之间的反平行耦合（APC）层。 第一厚度略大于第二厚度。 如此配置，AP钉扎层结构提供了与由感测电流产生的磁场方向相同的净磁矩，这降低了SV传感器中振幅翻转的可能性。

    Anti-parallel tab sensor fabrication using chemical-mechanical polishing process
    7.
    发明授权
    Anti-parallel tab sensor fabrication using chemical-mechanical polishing process 失效
    使用化学机械抛光工艺制造反平行片传感器

    公开(公告)号：US07057863B2

    公开(公告)日：2006-06-06

    申请号：US10982220

    申请日：2004-11-05

    申请人： Marie-Claire Cyrille ,  Hardayal Singh Gill ,  James Mac Freitag

    发明人： Marie-Claire Cyrille ,  Hardayal Singh Gill ,  James Mac Freitag

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3906 ,  G11B5/398 ,  G11B2005/3996 ,  Y10T29/49048

    摘要： A method for fabricating a sensor having anti-parallel tab regions. The method includes forming a free layer, and forming a first layer of a carbon composition above the active area of the free layer. A layer of resist is formed above the first layer of carbon composition. A bias layer is formed above the tab areas of the free layer, the bias layer being operative to substantially pin magnetic moments of the tab areas of the free layer. Leads are formed above the bias layer. A second layer of carbon composition is formed above the tab areas of the free layer. Any material above a plane extending parallel to portions of the second layer of carbon composition above the tab areas are removed using chemical-mechanical polishing. Any remaining carbon composition is removed.

    摘要翻译： 一种用于制造具有反平行突片区域的传感器的方法。 该方法包括形成自由层，并且在自由层的有效区域上方形成碳组合物的第一层。 在第一层碳组合物之上形成一层抗蚀剂。 偏置层形成在自由层的突片区域上方，偏置层可操作以基本上固定自由层的突片区域的磁矩。 引线形成在偏置层上方。 第二层碳组合物形成在自由层的突片区域上方。 使用化学机械抛光除去平行于第二层碳组合物的部分的平面延伸的平面上的任何材料。 任何剩余的碳组成被除去。

    Anti-parallel tab sensor fabrication
    8.
    发明授权
    Anti-parallel tab sensor fabrication 失效
    反平行片传感器制造

    公开(公告)号：US07341876B2

    公开(公告)日：2008-03-11

    申请号：US11215381

    申请日：2005-08-30

    申请人： Marie-Claire Cyrille ,  Hardayal Singh Gill ,  James Mac Freitag

    发明人： Marie-Claire Cyrille ,  Hardayal Singh Gill ,  James Mac Freitag

    IPC分类号： H01L21/00

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3906 ,  G11B5/398 ,  G11B2005/3996 ,  Y10T29/49048

    摘要： A method for fabricating a sensor having anti-parallel tab regions. The method includes forming a free layer having tab areas on opposite sides of an active area, forming a first layer of a carbon composition above the active area of the free layer, the first layer of carbon being substantially absent from tab areas of the free area, forming spacer layers above the tab areas of the free layer, the spacer layers being operable to make magnetic moments of ferromagnetic layers on opposite sides thereof antiparallel, forming bias layers above the spacer layers, the bias layers being operative to substantially pin magnetic moments of the tab areas of the free layer, forming second layers of carbon composition above the tab areas of the free layer, and removing the layers of carbon composition and any portions of the layers overlying the layers of carbon composition.

    摘要翻译： 一种用于制造具有反平行突片区域的传感器的方法。 该方法包括在活性区域的相对侧上形成具有突片区域的自由层，在自由层的有效区域上形成碳组合物的第一层，第一层碳基本上不存在于自由区域的突片区域中 在所述自由层的突片区域上方形成间隔层，所述间隔层可操作以使铁磁层的相反侧上的磁矩反平行，在所述间隔层上方形成偏压层，所述偏压层可操作以基本上将 自由层的突片区域，在自由层的突片区域上方形成第二层碳组合物，并且去除碳组合物层和覆盖碳组成层的层的任何部分。

    Method and apparatus for enhanced dual spin valve giant magnetoresistance effects having second spin valve self-pinned composite layer
    10.
    发明授权
    Method and apparatus for enhanced dual spin valve giant magnetoresistance effects having second spin valve self-pinned composite layer 有权
    具有第二自旋阀自固定复合层的增强双自旋阀巨磁阻效应的方法和装置

    公开(公告)号：US07038889B2

    公开(公告)日：2006-05-02

    申请号：US10260971

    申请日：2002-09-30

    申请人： James Mac Freitag ,  Hardayal Singh Gill ,  Mustafa Pinarbasi

    发明人： James Mac Freitag ,  Hardayal Singh Gill ,  Mustafa Pinarbasi

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/313 ,  G11B5/3903 ,  G11B5/3954

    摘要： A dual spin valve giant magnetoresistance (GMR) sensor having two spin valves with the second spin valve being self-biased is disclosed herein. According to the present invention a dual spin valve system is disclosed wherein the first of the two spin valves in the dual spin valve element is pinned through exchange coupling, i.e., a first anti-ferromagnetic pinning layer and a first ferromagnetic pinned layer structure are exchange coupled for pinning the first magnetic moment of the first ferromagnetic pinned layer structure in a first direction. The second of the two spin valves in the dual spin valve system is self-pinned. The self-pinned spin valve does not use any anti-ferromagnetic layers to pin the magnetization of the pinned layers.

    摘要翻译： 本文公开了具有两个自旋阀的双自旋阀巨磁电阻（GMR）传感器，其中第二自旋阀是自偏压的。 根据本发明，公开了一种双自旋阀系统，其中双自旋阀元件中的两个自旋阀中的第一个通过交换耦合被钉扎，即，第一反铁磁钉扎层和第一铁磁钉扎层结构是交换 耦合以将第一铁磁性钉扎层结构的第一磁矩固定在第一方向上。 双自旋阀系统中的两个自旋阀中的第二个是自固定的。 自锁自旋阀不使用任何反铁磁层来固定被钉扎层的磁化。