利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

23 条记录 (耗时 0.025 秒)

    Nonvolatile memory device and method of fabricating the same
    21.
    发明申请
    Nonvolatile memory device and method of fabricating the same 审中-公开
    非易失性存储器件及其制造方法

    公开(公告)号：US20070148933A1

    公开(公告)日：2007-06-28

    申请号：US11512658

    申请日：2006-08-30

    申请人： Jin-Il Lee ,  Choong-Man Lee ,  Sung-Lae Cho ,  Ran-Ju Jung ,  Sang-Yeol Kang ,  Young-Lim Park

    发明人： Jin-Il Lee ,  Choong-Man Lee ,  Sung-Lae Cho ,  Ran-Ju Jung ,  Sang-Yeol Kang ,  Young-Lim Park

    IPC分类号： H01L21/20

    CPC分类号： H01L21/32051 ,  H01L21/28562 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

    摘要： A method of fabricating a phase-change random-access memory (RAM) device includes forming a chalcogenide material on a substrate. A bottom contact is formed under the chalcogenide material, the bottom contact comprising TiAlN. Forming the bottom contact includes performing an atomic layer deposition (ALD) process, the ALD process including introducing an NH3 source gas into a chamber in which the ALD process is being carried out, a flow amount of the NH3 gas being such that the resulting bottom contact has a chlorine content of less than 1 at %. The bottom contact can include TiAlN having a crystallinity in terms of full-width half-maximum (FWHM) of less than about 0.65 degree.

    摘要翻译： 制造相变随机存取存储器（RAM）器件的方法包括在衬底上形成硫族化物材料。 在硫族化物材料下形成底部接触，底部接触包含TiAlN。 形成底部接触包括执行原子层沉积（ALD）工艺，ALD工艺包括将NH 3源气体引入到其中进行ALD工艺的室中，流动量为 NH 3气体使得所得底部接触物的氯含量小于1原子％。 底部接触可以包括具有小于约0.65度的全宽度半最大值（FWHM）的结晶度的TiAlN。

    Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device
    22.
    发明申请
    Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device 有权
    形成相变材料层的方法，相变存储单元的制造方法以及相变半导体存储器件的制造方法

    公开(公告)号：US20070054475A1

    公开(公告)日：2007-03-08

    申请号：US11353129

    申请日：2006-02-14

    申请人： Jin-Il Lee ,  Choong-Man Lee ,  Sung-Lae Cho ,  Young-Lim Park

    发明人： Jin-Il Lee ,  Choong-Man Lee ,  Sung-Lae Cho ,  Young-Lim Park

    IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L31/20

    CPC分类号： H01L45/1233 ,  C23C16/305 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1675 ,  H01L45/1683

    摘要： A phase changeable material layer usable in a semiconductor memory device and a method of forming the same are disclosed. The method includes forming a plasma in a chamber having a substrate disposed therein, providing a first source gas including a germanium based material to form a first layer including the germanium based material on the substrate while maintaining the plasma in the chamber, providing a second source gas including a tellurium based material to react with the first layer to form a first composite material layer including a germanium-tellurium composite material on the substrate while maintaining the plasma in the chamber, providing a third source gas including an antimony based material to form a second layer including the antimony based material on the first composite material layer while maintaining the plasma in the chamber, and providing a fourth source gas including tellurium based material to react with the second layer including antimony based material to form a second composite material layer including an antimony-tellurium composite material on the first composite material layer. Accordingly, the phase changeable material layer may be formed at a low temperature and power to have desirable electrical characteristics.

    摘要翻译： 公开了可用于半导体存储器件的相变材料层及其形成方法。 该方法包括在具有设置在其中的基板的腔室中形成等离子体，提供包括锗基材料的第一源气体，以在将等离子体保持在腔室中的同时在基板上形成包括基于锗的材料的第一层，从而提供第二源 气体，其包括与第一层反应的碲基材料，以在衬底上形成包含锗 - 碲复合材料的第一复合材料层，同时将等离子体保持在室中，提供包括锑基材料的第三源气体，以形成 第二层，包括在第一复合材料层上的锑基材料，同时将等离子体保持在室中，并且提供包括碲基材料的第四源气体，以与包含锑基材料的第二层反应以形成第二复合材料层， 锑 - 碲复合材料在第一层复合材料上的铺设 r。 因此，可以在低温和功率下形成相变材料层以具有期望的电特性。