公开(公告)号：US20110221064A1

公开(公告)日：2011-09-15

申请号：US13114342

申请日：2011-05-24

申请人： Jonathan D. Chapple-Sokol ,  Daniel A. Delibac ,  Zhong-Xiang He ,  Tom C. Lee ,  William J. Murphy ,  Timothy D. Sullivan ,  David C. Thomas ,  Daniel S. Vanslette

发明人： Jonathan D. Chapple-Sokol ,  Daniel A. Delibac ,  Zhong-Xiang He ,  Tom C. Lee ,  William J. Murphy ,  Timothy D. Sullivan ,  David C. Thomas ,  Daniel S. Vanslette

IPC分类号： H01L23/522

CPC分类号： H01L21/76834 ,  H01L21/32051 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76858 ,  H01L2221/1078

摘要： A vertical metallic stack, from bottom to top, of an elemental metal liner, a metal nitride liner, a Ti liner, an aluminum portion, and a metal nitride cap, is formed on an underlying metal interconnect structure. The vertical metallic stack is annealed at an elevated temperature to induce formation of a TiAl3 liner by reaction of the Ti liner with the material of the aluminum portion. The material of the TiAl3 liner is resistant to electromigration, thereby providing enhanced electromigration resistance to the vertical metallic stack comprising the elemental metal liner, the metal nitride liner, the TiAl3 liner, the aluminum portion, and the metal nitride cap. The effect of enhanced electromigration resistance may be more prominent in areas in which the metal nitride cap suffers from erosion during processing.

摘要翻译： 在下面的金属互连结构上形成由元素金属衬垫，金属氮化物衬垫，Ti衬垫，铝部分和金属氮化物盖的从底部到顶部的垂直金属堆叠。 垂直金属叠层在升高的温度下退火，以通过Ti衬垫与铝部分的材料反应而引起TiAl 3衬层的形成。 TiAl 3衬垫的材料对电迁移是耐受的，从而对包括元素金属衬垫，金属氮化物衬垫，TiAl 3衬里，铝部分和金属氮化物盖的垂直金属堆叠提供增强的电迁移阻力。 在金属氮化物盖在加工过程中遭受侵蚀的区域中，增强的耐电迁移性的作用可能更为突出。

公开(公告)号：US06838364B2

公开(公告)日：2005-01-04

申请号：US09850816

申请日：2001-05-08

申请人： Stephen B. Brodsky ,  William J. Murphy ,  Matthew J. Rutten ,  David C. Strippe ,  Daniel S. Vanslette

发明人： Stephen B. Brodsky ,  William J. Murphy ,  Matthew J. Rutten ,  David C. Strippe ,  Daniel S. Vanslette

IPC分类号： H01L21/28 ,  C23C14/04 ,  C23C14/16 ,  C23C14/56 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/165 ,  C23C14/564 ,  H01L21/2855 ,  H01L21/76876

摘要： A method of forming inter-level contacts or vias between metal layers using a tungsten film deposited into the via using non-collimated sputter deposition. The sputter chamber is configured with a pressure of about 1 mTorr to about 10 mTorr with an inert gas flow of at least 25 cm3/min to about 150 cm3/min. Shielding inside the chamber is coated with a material, preferably, aluminum oxide, that promotes adhesion of tungsten to the shielding. An adhesion layer of titanium may be included prior to deposition of the tungsten film. Non-collimated sputter deposition increases the target to substrate distance inside the sputter chamber; reduces the heating effect associated with traditional collimated sputtering; and provides more robust diffusion barriers.

摘要翻译： 在金属层之间使用非平行溅射沉积沉积在通孔中的钨膜形成层间接触或通孔的方法。 溅射室配置有约1mTorr至约10mTorr的压力，惰性气流为至少25cm 3 / min至约150cm 3 / min。 在室内的屏蔽被涂覆有材料，优选氧化铝，其促进钨粘附到屏蔽层上。 在沉积钨膜之前可以包括钛的粘附层。 非准直的溅射沉积将目标增加到溅射室内的衬底距离; 降低与传统准直溅射相关的加热效应; 并提供更强大的扩散屏障。