Measuring and predicting VLSI chip reliability and failure
    21.
    发明授权
    Measuring and predicting VLSI chip reliability and failure 失效
    测量和预测VLSI芯片的可靠性和故障

    公开(公告)号:US07480882B1

    公开(公告)日:2009-01-20

    申请号:US12049344

    申请日:2008-03-16

    CPC分类号: G01R31/318536

    摘要: This embodiment replaces the use of LBIST to get a pass or no-pass result. A selective signature feature is used to collect the top failing paths, by shmooing the chip over a cycle time. These paths can be stored on-chip or off-chip, for later use. Once the chip is running in the field for a certain time, the same procedure is performed to collect the top failing paths, and this is compared with the stored old paths. If the order of the top paths changes, it indicates that (for example) there is a path (not the slowest path before) that slows more than others, which could be potential reliability concern. Therefore, a potential reliability failure is identified in the field.

    摘要翻译: 该实施例取代了LBIST的使用以获得通过或不通过结果。 选择性签名功能用于通过在一个周期时间内抖动芯片来收集顶部故障路径。 这些路径可以片上或片外存储,供以后使用。 一旦芯片在现场运行一段时间,执行相同的过程来收集最上面的故障路径,并将其与存储的旧路径进行比较。 如果顶部路径的顺序发生变化,则表示(例如)有一个路径(不是最慢的路径)比其他路径慢,这可能是潜在的可靠性问题。 因此,在现场确定潜在的可靠性故障。

    METHOD AND APPARATUS FOR DIAGNOSING BROKEN SCAN CHAIN BASED ON LEAKAGE LIGHT EMISSION
    22.
    发明申请
    METHOD AND APPARATUS FOR DIAGNOSING BROKEN SCAN CHAIN BASED ON LEAKAGE LIGHT EMISSION 失效
    用于诊断基于泄漏光发射的断路扫描链的方法和装置

    公开(公告)号:US20080208507A1

    公开(公告)日:2008-08-28

    申请号:US12115768

    申请日:2008-05-06

    IPC分类号: G01R31/02

    CPC分类号: G01R31/318538 G01R31/311

    摘要: A mechanism for diagnosing broken scan chains based on leakage light emission is provided. An image capture mechanism detects light emission from leakage current in complementary metal oxide semiconductor (CMOS) devices. The diagnosis mechanism identifies devices with unexpected light emission. An unexpected amount of light emission may indicate that a transistor is turned off when it should be turned on or vice versa. All possible inputs may be tested to determine whether a problem exists with transistors in latches or with transistors in clock buffers. Broken points in the scan chain may then be determined based on the locations of unexpected light emission.

    摘要翻译: 提供了一种基于泄漏光发射来诊断断层扫描链的机构。 图像捕获机构检测互补金属氧化物半导体(CMOS)器件中的泄漏电流的发光。 诊断机制识别具有意外发光的设备。 意外的发光量可能表明当它应该被打开时晶体管被关闭,反之亦然。 可以测试所有可能的输入以确定锁存器中的晶体管或时钟缓冲器中的晶体管是否存在问题。 然后可以基于意外光发射的位置来确定扫描链中的断点。

    Enhanced signal observability for circuit analysis

    公开(公告)号:US07355419B2

    公开(公告)日:2008-04-08

    申请号:US10912493

    申请日:2004-08-05

    IPC分类号: G01R31/302

    CPC分类号: G01R31/311

    摘要: Methods and arrangements to enhance photon emissions responsive to a signal within an integrated circuit (IC) for observability of signal states utilizing, e.g., picosecond imaging circuit analysis (PICA), are disclosed. Embodiments attach a beacon to the signal of interest and apply a voltage across the beacon to enhance photon emissions responsive to the signal of interest. The voltage is greater than the operable circuit voltage, Vdd, to enhance photon emissions with respect to intensity and energy. Thus, the photon emissions are more distinguishable from noise. In many embodiments, the beacon includes a transistor and, in several embodiments, the beacon includes an enablement device to enable and disable photon emissions from the beacon. Further, a PICA detector may capture photon emissions from the beacon and process the photons to generate time traces.

    Method and apparatus for light-controlled circuit characterization
    24.
    发明授权
    Method and apparatus for light-controlled circuit characterization 失效
    用于光控电路表征的方法和装置

    公开(公告)号:US07154287B2

    公开(公告)日:2006-12-26

    申请号:US11044943

    申请日:2005-01-27

    IPC分类号: G01R31/26 G01R31/305

    CPC分类号: G01R31/311

    摘要: Light-controlled circuit characterization techniques are disclosed. For example, a technique for testing an integrated circuit includes the following steps/operations. At least a portion of the integrated circuit is stimulated with a light source so as to affect one or more electrical characteristics associated with the integrated circuit. By way of example, the light source may be a laser. Optical emissions are captured from the portion of the integrated circuit stimulated by the light source and/or one or more portions of the integrated circuit associated with the stimulated portion. The optical emissions are associated with one or more switching operations of one or more components of the integrated circuit. At least a portion of the captured optical emissions are processed to provide information about the integrated circuit.

    摘要翻译: 公开了光控电路表征技术。 例如,用于测试集成电路的技术包括以下步骤/操作。 集成电路的至少一部分被光源刺激以便影响与集成电路相关联的一个或多个电特性。 作为示例,光源可以是激光器。 从由光源刺激的集成电路的部分和/或与被刺激部分相关联的集成电路的一个或多个部分捕获光发射。 光发射与集成电路的一个或多个组件的一个或多个切换操作相关联。 捕获的光发射的至少一部分被处理以提供关于集成电路的信息。

    Method and apparatus for diagnosing broken scan chain based on leakage light emission
    25.
    发明申请
    Method and apparatus for diagnosing broken scan chain based on leakage light emission 失效
    基于泄漏光发射诊断断层扫描链的方法和装置

    公开(公告)号:US20050168228A1

    公开(公告)日:2005-08-04

    申请号:US10771218

    申请日:2004-02-03

    CPC分类号: G01R31/318538 G01R31/311

    摘要: A mechanism for diagnosing broken scan chains based on leakage light emission is provided. An image capture mechanism detects light emission from leakage current in complementary metal oxide semiconductor (CMOS) devices. The diagnosis mechanism identifies devices with unexpected light emission. An unexpected amount of light emission may indicate that a transistor is turned off when it should be turned on or vice versa. All possible inputs may be tested to determine whether a problem exists with transistors in latches or with transistors in clock buffers. Broken points in the scan chain may then be determined based on the locations of unexpected light emission.

    摘要翻译: 提供了一种基于泄漏光发射来诊断断层扫描链的机构。 图像捕获机构检测互补金属氧化物半导体(CMOS)器件中的泄漏电流的发光。 诊断机制识别具有意外发光的设备。 意外的发光量可能表明当它应该被打开时晶体管被关闭,反之亦然。 可以测试所有可能的输入以确定锁存器中的晶体管或时钟缓冲器中的晶体管是否存在问题。 然后可以基于意外光发射的位置来确定扫描链中的断点。

    System and method for virtual control of laboratory equipment
    26.
    发明授权
    System and method for virtual control of laboratory equipment 失效
    实验室设备虚拟控制系统及方法

    公开(公告)号:US08041437B2

    公开(公告)日:2011-10-18

    申请号:US12103554

    申请日:2008-04-15

    IPC分类号: G05B19/18

    CPC分类号: G05B15/02 G06F19/00

    摘要: A system for virtual control of electronic laboratory equipment includes a local computer system. One or more items of electronic laboratory equipment are connected to the local computer system. Each item of electronic laboratory equipment has a physical control panel including one or more displays or controls. A virtual control panel generation unit generates a virtual control panel accessible from a remote computer system. The virtual control panel is substantially similar to the physical control panel in appearance. A command interpretation unit monitors interaction between the remote user and the virtual control panel and generates electronic laboratory equipment commands for exploiting the functionality of the electronic laboratory equipment.

    摘要翻译: 用于虚拟控制电子实验室设备的系统包括本地计算机系统。 一台或多台电子实验室设备连接到本地计算机系统。 电子实验室设备的每个项目都有一个包括一个或多个显示器或控件的物理控制面板。 虚拟控制面板生成单元生成可从远程计算机系统访问的虚拟控制面板。 虚拟控制面板在外观上基本类似于物理控制面板。 命令解释单元监视远程用户和虚拟控制面板之间的交互,并产生用于利用电子实验室设备的功能的电子实验室设备命令。

    Constructing Variability Maps by Correlating Off-State Leakage Emission Images to Layout Information
    27.
    发明申请
    Constructing Variability Maps by Correlating Off-State Leakage Emission Images to Layout Information 失效
    通过将非状态泄漏图像关联到布局信息来构建变异图

    公开(公告)号:US20100080445A1

    公开(公告)日:2010-04-01

    申请号:US12241926

    申请日:2008-09-30

    IPC分类号: G06K9/00

    CPC分类号: G06T7/001 G06T2207/30148

    摘要: Improved techniques are disclosed for monitoring or sensing process variations in integrated circuit designs. Such techniques provide such improvements by constructing variability maps correlating leakage emission images to layout information. By way of example, a method for monitoring one or more manufacturing process variations associated with a device under test (e.g., integrated circuit) comprises the following steps. An emission image representing an energy emission associated with a leakage current of the device under test is obtained. The emission image is correlated with a layout of the device under test to form a cross emission image. Common structures on the cross emission image are selected and identified as regions of interest. One or more variability measures (e.g., figures of merit) are calculated based on the energy emissions associated with the regions of interest. A variability map is created based on the calculated variability measures, wherein the variability map is useable to monitor the one or more manufacturing process variations associated with the device under test.

    摘要翻译: 公开了用于监测或感测集成电路设计中的工艺变化的改进的技术。 这样的技术通过构建将泄漏发射图像与布局信息相关联的可变性图来提供这样的改进。 作为示例,用于监测与被测器件(例如,集成电路)相关联的一个或多个制造工艺变化的方法包括以下步骤。 获得表示与被测设备的泄漏电流相关联的能量发射的发射图像。 发射图像与待测器件的布局相关,以形成交叉发射图像。 选择交叉发射图像上的共同结构并将其识别为感兴趣的区域。 基于与感兴趣区域相关联的能量排放来计算一个或多个可变性度量(例如,品质因素)。 基于所计算的变异性度量创建变异性图,其中可变性图可用于监测与被测设备相关联的一个或多个制造过程变化。

    Process variation on-chip sensor
    28.
    发明申请
    Process variation on-chip sensor 失效
    过程变化片上传感器

    公开(公告)号:US20090206821A1

    公开(公告)日:2009-08-20

    申请号:US12032100

    申请日:2008-02-15

    IPC分类号: G01R19/00

    摘要: Improved process variation sensors and techniques are disclosed, wherein both global and local variations associated with transistors on an integrated circuit can be monitored. For example, respective circuits for sensing a global process variation, a local process variation between neighboring negative-channel type transistors, and a local process variation between neighboring positive-channel type transistors are disclosed. Further, in one example, a method for sensing a process variation associated with transistors on an integrated circuit includes providing at least one process variation sensor on the integrated circuit, the process variation sensor comprising a sensing portion including one or more transistors and a loading and amplification portion including one or more transistors, and operating the one or more transistors of the sensing portion and the one or more transistors of the loading and amplification portion in a subthreshold region of transistor operation such that when a threshold voltage of at least one of the transistors changes, a process variation is sensed.

    摘要翻译: 公开了改进的工艺变化传感器和技术,其中可以监测与集成电路上的晶体管相关联的全局和局部变化。 例如,公开了用于感测全局处理变化的相应电路,相邻负信道型晶体管之间的局部处理变化以及相邻正通道型晶体管之间的局部工艺变化。 此外,在一个示例中,用于感测与集成电路上的晶体管相关联的工艺变化的方法包括在集成电路上提供至少一个工艺变化传感器,所述工艺变化传感器包括感测部分,其包括一个或多个晶体管, 放大部分包括一个或多个晶体管,并且在晶体管操作的亚阈值区域中操作感测部分的一个或多个晶体管和负载和放大部分的一个或多个晶体管,使得当晶体管操作中的至少一个的阈值电压 晶体管变化,感测到工艺变化。

    Method and apparatus for diagnosing broken scan chain based on leakage light emission
    29.
    发明授权
    Method and apparatus for diagnosing broken scan chain based on leakage light emission 失效
    基于泄漏光发射诊断断层扫描链的方法和装置

    公开(公告)号:US07426448B2

    公开(公告)日:2008-09-16

    申请号:US10771218

    申请日:2004-02-03

    IPC分类号: G06F19/00

    CPC分类号: G01R31/318538 G01R31/311

    摘要: A mechanism for diagnosing broken scan chains based on leakage light emission is provided. An image capture mechanism detects light emission from leakage current in complementary metal oxide semiconductor (CMOS) devices. The diagnosis mechanism identifies devices with unexpected light emission. An unexpected amount of light emission may indicate that a transistor is turned off when it should be turned on or vice versa. All possible inputs may be tested to determine whether a problem exists with transistors in latches or with transistors in clock buffers. Broken points in the scan chain may then be determined based on the locations of unexpected light emission.

    摘要翻译: 提供了一种基于泄漏光发射来诊断断层扫描链的机构。 图像捕获机构检测互补金属氧化物半导体(CMOS)器件中的泄漏电流的发光。 诊断机制识别具有意外发光的设备。 意外的发光量可能表明当它应该被打开时晶体管被关闭,反之亦然。 可以测试所有可能的输入以确定锁存器中的晶体管或时钟缓冲器中的晶体管是否存在问题。 然后可以基于意外光发射的位置来确定扫描链中的断点。

    SYSTEM AND METHOD FOR ESTIMATION OF INTEGRATED CIRCUIT SIGNAL CHARACTERISTICS USING OPTICAL MEASUREMENTS
    30.
    发明申请
    SYSTEM AND METHOD FOR ESTIMATION OF INTEGRATED CIRCUIT SIGNAL CHARACTERISTICS USING OPTICAL MEASUREMENTS 有权
    使用光学测量估计集成电路信号特性的系统和方法

    公开(公告)号:US20080204057A1

    公开(公告)日:2008-08-28

    申请号:US12115658

    申请日:2008-05-06

    IPC分类号: G01R31/00

    CPC分类号: G01R31/311 Y10T29/49004

    摘要: Systems and methods for making electrical measurements using optical emissions include positioning a sensor/photodetector to measure radiation emissions from devices to be tested. Radiation emission information is collected from the device to be tested during electrical operation. Characteristic features of the radiation emission information are determined, and differences between the characteristic features are deciphered. Based on the differences, models are employed to determine electrical properties of the device, especially operational characteristics.

    摘要翻译: 使用光学发射进行电气测量的系统和方法包括定位传感器/光电检测器以测量待测装置的辐射发射。 在电气操作期间,从要测试的设备收集辐射发射信息。 确定辐射发射信息的特征,特征特征之间的差异被解密。 基于差异,使用模型来确定装置的电气特性,特别是操作特性。