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57 条记录 (耗时 0.026 秒)

    Monomers for photoresist, polymers thereof, and photoresist compositions using the same
    21.
    发明授权
    Monomers for photoresist, polymers thereof, and photoresist compositions using the same 失效

    公开(公告)号：US06291131B1

    公开(公告)日：2001-09-18

    申请号：US09383547

    申请日：1999-08-26

    申请人： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： C07D493/08 ,  C07C61/13 ,  C07C69/753 ,  C07D495/08 ,  C08F222/06 ,  C08F232/08 ,  G03F7/0045 ,  G03F7/039 ,  Y02P20/55 ,  Y10S430/127

    摘要： The present invention relates to novel monomers for preparing photoresist polymers, polymers thereof, and photoresist compositions using the same. The monomers of the iinvention are represented by the following Chemical Formula 1: wherein, X and Y individually represent oxygen, sulfur, CH2 or CH2CH2; n is an integer of 1 to 5; and R1, R2, R3 and R4 individually represent hydrogen, C1-C10 alkyl having substituent(s) on its main or branched chain, C1-C10 ester having substituent(s) on its main or branched chain, C1-C10 ketone having substituent(s) on its main or branched chain, C1-C10 carboxylic acid having substituent(s) on its main or branched chain, C1-C10 acetal having substituent(s) on its main or branched chain, C1-C10 alkyl having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, C1-C10 ester having substituent(s) including one or more hydroxyl group(s ) on its main or branched chain, C1-C10 ketone having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, C1-C10 carboxylic acid having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, or C1-C10 acetal having substituent(s) including one or more hydroxyl group(s) on its main or branched chain; provided that at least one of R1 to R4 represent(s) —COO—R′—OH wherein R′ is a linear or branched chain alkyl group with or without substituent(s) on its linear or branched chain. Polymers according to the present invention preferably comprise (i) a monomer of Chemical Formula 1 above as the first comonomer, (ii) a polyalicyclic derivative having one or more acid labile protective group(s) as the second comonomer, and (iii) at least one polymerization-enhancing monomer, preferably selected from the group consisting of maleic anhydride, maleimide derivatives, and combinations thereof. In order to increase photosensitivity, it is also preferable for the photoresist copolymer to comprise (iv) a polyalicyclic derivative having one or more carboxylic acid groups, as an additional comonomer.

    Photoresist cross-linking monomers, photoresist polymers and photoresist compositions comprising the same
    22.
    发明授权
    Photoresist cross-linking monomers, photoresist polymers and photoresist compositions comprising the same 有权
    光致抗蚀剂交联单体，光致抗蚀剂聚合物和包含其的光致抗蚀剂组合物

    公开(公告)号：US06200731B1

    公开(公告)日：2001-03-13

    申请号：US09465112

    申请日：1999-12-16

    申请人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03C173

    CPC分类号： C07D519/00 ,  C07C69/753 ,  Y10S430/115

    摘要： The present invention discloses a cross-linking monomer for a photoresist polymer represented by following Chemical Formula 1: wherein, V represents CH2, CH2CH2, oxygen or sulfur; Y is selected from the group consisting of straight or branched C1-10 alkyl, oxygen, and straight or branched C1-10 ether; R′ and R″ individually represent H or CH3; i is a number of 1 to 5; and n is a number of 0 to 3; and a process for preparing a photoresist copolymer comprising the same.

    摘要翻译： 本发明公开了由以下化学式1表示的光致抗蚀剂聚合物交联单体：<化学式1>其中V表示CH 2，CH 2 CH 2，氧或硫; Y选自直链或支链C 1-10烷基，氧和直链或支链C1-10醚; R'和R“分别表示H或CH 3; 我是1到5的数字; n为0〜3的数; 以及制备包含该光致抗蚀剂的光致抗蚀剂共聚物的方法。

    Guider for spinal operation and cage therefor
    23.
    发明授权
    Guider for spinal operation and cage therefor 有权

    公开(公告)号：US11844701B2

    公开(公告)日：2023-12-19

    申请号：US17135663

    申请日：2020-12-28

    申请人： ENDOVISION CO., LTD. ,  Min Ho Jung

    发明人： Min Ho Jung ,  Sae Won Eum

    IPC分类号： A61F2/44 ,  A61F2/46

    CPC分类号： A61F2/447 ,  A61F2/4611 ,  A61F2002/4629

    摘要： Proposed are a guider for a spinal operation and a cage therefor. The guider includes a sliding portion configured to guide a cage for a spinal operation and a holder to a surgical site, a head of the sliding portion being inserted into a human body region where a surgical incision is made for the spinal operation, and the cage for a spinal operation being combined with the holder; a support portion combined with one side of the sliding portion and thus supporting the sliding portion; and a handle combined with the support portion.

    Sheath device for biportal endoscopic spinal surgery
    24.
    发明授权
    Sheath device for biportal endoscopic spinal surgery 有权

    公开(公告)号：US11457909B2

    公开(公告)日：2022-10-04

    申请号：US16763175

    申请日：2017-11-30

    申请人： ENDOVISION CO., LTD. ,  Min Ho Jung

    发明人： Min Ho Jung

    IPC分类号： A61B17/02 ,  A61B1/31 ,  A61B17/34

    摘要： An endoscopic device for biportal endoscopic spinal surgery is proposed. The device includes: a guide tube as a hollow tubular member extending in a longitudinal direction and having a front end thereof reaching a target site in a patient's body when being used, the guide tube accommodating a probe of an endoscope inserted therein; a saline solution guide part mounted on a rear end of the guide tube and guiding a saline solution injected from an outside to an inside of the guide tube; and an adapter part positioned at the rear end of the guide tube and guiding the probe of the endoscope to use to the guide tube.

    Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same
    25.
    发明授权
    Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same 失效
    使用用于光刻胶的顶涂组合物和由其形成的产品形成精细图案的方法

    公开(公告)号：US07329477B2

    公开(公告)日：2008-02-12

    申请号：US10993869

    申请日：2004-11-19

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03F7/00 ,  G03F7/004

    CPC分类号： G03F7/11 ,  G03F7/0045

    摘要： The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F2 (157 nm), E-beam, ion beam and extremely ultraviolet (EUV).

    摘要翻译： 本发明提供了使用胺类污染物保护性顶涂层组合物的方法。 优选地，本发明的胺污染保护性顶涂剂组合物包含胺污染保护化合物。 有用的胺污染保护化合物包括胺衍生物; 氨基酸衍生物; 酰胺衍生物; 氨基甲酸酯衍生物; 尿素衍生物; 的盐; 及其混合物。 本发明的胺污染保护性顶涂剂组合物由于后曝光延迟效应而降低或消除诸如T形顶部的问题和/或由于与常规光刻工艺相关的酸扩散而难以形成低于100nm的精细图案 涉及使用诸如KrF（248nm），ArF（193nm），F 2 N（157nm），电子束，离子束等的光源的含有脂环族主链的光致抗蚀剂聚合物 紫外线（EUV）。

    Polymer-containing photoresist, and process for manufacturing the same
    26.
    发明授权
    Polymer-containing photoresist, and process for manufacturing the same 有权
    含聚合物的光致抗蚀剂及其制造方法

    公开(公告)号：US06632903B2

    公开(公告)日：2003-10-14

    申请号：US09934369

    申请日：2001-08-21

    申请人： Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    发明人： Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    IPC分类号： C08F23200

    CPC分类号： C08F232/08 ,  C07C67/347 ,  C07C69/753 ,  C08F222/06

    摘要： The present invention relates to a semiconductor device using a copolymer-containing photoresist, and a process for manufacturing the same. As a norbornene derivative (monomer) having a hydrophilic group is synthesized and introduced to the backbone chain of a polymer, the polymer according to the present invention has excellent etching resistance and heat resistance, which are the characteristic points of alicyclic olefin structure, and provide excellent resolution due to prominent enhancement of adhesiveness resulted from introducing a hydrophilic group (—OH).

    摘要翻译： 本发明涉及使用含共聚物的光致抗蚀剂的半导体器件及其制造方法。 作为具有亲水基团的降冰片烯衍生物（单体）合成并引入到聚合物的主链中，本发明的聚合物具有优异的耐蚀性和耐热性，这是脂环式烯烃结构的特征点，并提供 由于引入亲水基团（-OH）导致的粘合性的显着增强，优异的分辨率

    Photoresist monomer comprising bisphenol derivatives and polymers thereof
    27.
    发明授权
    Photoresist monomer comprising bisphenol derivatives and polymers thereof 失效
    包含双酚衍生物的光敏单体及其聚合物

    公开(公告)号：US06627383B2

    公开(公告)日：2003-09-30

    申请号：US09973630

    申请日：2001-10-09

    申请人： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03C1492

    CPC分类号： G03F7/0046 ,  C07C69/65 ,  C07C69/653 ,  C08F20/30 ,  G03F7/039 ,  G03F7/0392 ,  Y02P20/55 ,  Y10S430/108

    摘要： Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions using the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at the wavelength of 193 nm, 157 nm and 13 nm, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) and EUV (13 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein, R1, R2, R3, Y, W, m and n are as defined in the specification.

    摘要翻译： 下列通式1的光致抗蚀剂单体，其光致抗蚀剂聚合物和使用其的光致抗蚀剂组合物。 光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。 此外，光致抗蚀剂组合物在193nm，157nm和13nm波长处具有低吸光度，因此适用于在制造中使用诸如VUV（157nm）和EUV（13nm）的紫外光源的光刻工艺 用于高集成半导体器件的分钟电路。其中R1，R2，R3，Y，W，m和n如本说明书中所定义。

    Photoresist monomer, polymer thereof and photoresist composition containing it
    29.
    发明授权
    Photoresist monomer, polymer thereof and photoresist composition containing it 失效
    光致抗蚀剂单体，其聚合物和含有它的光致抗蚀剂组合物

    公开(公告)号：US06448352B1

    公开(公告)日：2002-09-10

    申请号：US09621068

    申请日：2000-07-21

    申请人： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

    发明人： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

    IPC分类号： C08F2608

    CPC分类号： C08F32/08 ,  G03F7/0395

    摘要： The present invention provides novel bicyclic photoresist monomers, and photoresist copolymer derived from the same. The bicyclic photoresist monomers of the present invention comprise both amine functional group and acid labile protecting group, and are represented by the formula: where m, n, R, V and B are those defined herein. The photoresist composition comprising the photoresist copolymer of the present invention has excellent etching resistance and heat resistance, and remarkably enhanced PED stability (post exposure delay stability).

    摘要翻译： 本发明提供了新的双环光致抗蚀剂单体和衍生自其的光致抗蚀剂共聚物。 本发明的双环光致抗蚀剂单体包括胺官能团和酸不稳定保护基团，并且由下式表示：其中m，n，R，V和B是本文定义的那些。 包含本发明的光致抗蚀剂共聚物的光致抗蚀剂组合物具有优异的耐蚀刻性和耐热性，并且显着提高PED稳定性（曝光后延迟稳定性）。